Abstract: Disclosed is a method and apparatus for IP-based hybrid 3DTV content transmission and reception. According to one aspect of the present disclosure, an IP-based hybrid 3DTV content reception apparatus includes: a receiving unit receiving multiplexed 3DTV content information; an additional data obtaining unit obtaining service layer signaling information from the received 3DTV content information, and obtaining additional data based on the obtained service layer signaling information; a decoding unit decoding the received 3DTV content information by using the obtained additional data; and a playing back unit playing back the decoded 3DTV content.

Abstract: Disclosed is a method and apparatus for IP-based hybrid 3DTV content transmission and reception. According to one aspect of the present disclosure, an IP-based hybrid 3DTV content reception apparatus includes: a receiving unit receiving multiplexed 3DTV content information; an additional data obtaining unit obtaining service layer signaling information from the received 3DTV content information, and obtaining additional data based on the obtained service layer signaling information; a decoding unit decoding the received 3DTV content information by using the obtained additional data; and a playing back unit playing back the decoded 3DTV content.

Abstract: The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate.

Abstract: A dry cleaning method of an apparatus for depositing a carbon-containing film is provided. The method includes in-situ cleaning an inside of a reactor of the apparatus, wherein the cleaning of the inside of the reactor of the apparatus comprises supplying a cleaning gas including halogens with being activated by using a remote plasma generator to the reactor and simultaneously supplying a carbon-removing gas without being activated to the reactor. In the method, a by-product in a solid form is not generated, and in-situ cleaning can be performed without stopping the apparatus for depositing a carbon-containing film after a predetermined amount of wafers are treated, such that productivity of the apparatus for depositing a carbon-containing film can be maximized.

Abstract: The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate.

Abstract: Provided is a cleaning method of an apparatus for depositing a metal containing film using a metal organic (MO) source. A fluorine (F)-containing gas and a carbon (C)-eliminating gas are supplied to a reactor of the apparatus so that in-situ cleaning can be performed. A solid by-product is not generated in the method, and after a predetermined quantity of wafers is processed, in-situ cleaning can be performed without exposing the reactor to the air such that productivity of the apparatus is maximized.

Abstract: Disclosed is a chemical vapor deposition method capable of raising the pressure in a chamber to a base pressure without generating particles, before a main process forming an insulation layer on a substrate. The method comprises the steps of: (1) stabilizing a chamber in which a substrate is loaded on a heater by introducing a gas into the chamber; (2) increasing the pressure in the chamber to a base pressure by gradually closing a throttle valve; (3) stabilizing the base pressure in the chamber; and (4) forming an insulation film on the substrate by injecting a film forming gas into the chamber.