Abstract: A storage device may include a monitoring module which monitors a characteristic degradation rate of a plurality of blocks included in a cell array of a nonvolatile memory; a group management module which designates the plurality of blocks as one or more groups, on the basis of a monitoring result of the monitoring module; a refresh period management module which determines refresh periods for each of the one or more groups; and a processor which performs refresh on the one or more groups in accordance with the determined refresh periods.

Abstract: A storage device may include a monitoring module which monitors a characteristic degradation rate of a plurality of blocks included in a cell array of a nonvolatile memory; a group management module which designates the plurality of blocks as one or more groups, on the basis of a monitoring result of the monitoring module; a refresh period management module which determines refresh periods for each of the one or more groups; and a processor which performs refresh on the one or more groups in accordance with the determined refresh periods.

Abstract: A storage device may include a monitoring module which monitors a characteristic degradation rate of a plurality of blocks included in a cell array of a nonvolatile memory; a group management module which designates the plurality of blocks as one or more groups, on the basis of a monitoring result of the monitoring module; a refresh period management module which determines refresh periods for each of the one or more groups; and a processor which performs refresh on the one or more groups in accordance with the determined refresh periods.

Abstract: A storage device may include a monitoring module which monitors a characteristic degradation rate of a plurality of blocks included in a cell array of a nonvolatile memory; a group management module which designates the plurality of blocks as one or more groups, on the basis of a monitoring result of the monitoring module; a refresh period management module which determines refresh periods for each of the one or more groups; and a processor which performs refresh on the one or more groups in accordance with the determined refresh periods.

Abstract: A storage device may include a monitoring module which monitors a characteristic degradation rate of a plurality of blocks included in a cell array of a nonvolatile memory; a group management module which designates the plurality of blocks as one or more groups, on the basis of a monitoring result of the monitoring module; a refresh period management module which determines refresh periods for each of the one or more groups; and a processor which performs refresh on the one or more groups in accordance with the determined refresh periods.

Abstract: A storage device may include a monitoring module which monitors a characteristic degradation rate of a plurality of blocks included in a cell array of a nonvolatile memory; a group management module which designates the plurality of blocks as one or more groups, on the basis of a monitoring result of the monitoring module; a refresh period management module which determines refresh periods for each of the one or more groups; and a processor which performs refresh on the one or more groups in accordance with the determined refresh periods.

Abstract: An operating method of a memory controller, configured to control a non-volatile memory device that performs a refresh read operation, detects a power on state or power off state of the non-volatile memory device and issues a refresh read command. The non-volatile memory device that receives the refresh read command is controlled to perform, one time, the refresh read operation including a read operation on one of a plurality of word lines with respect to each of the plurality of memory blocks.

Abstract: An operating method of a memory controller, configured to control a non-volatile memory device that performs a refresh read operation, detects a power on state or power off state of the non-volatile memory device and issues a refresh read command. The non-volatile memory device that receives the refresh read command is controlled to perform, one time, the refresh read operation including a read operation on one of a plurality of word lines with respect to each of the plurality of memory blocks.

Abstract: Disclosed is a method of writing data in a storage device including a nonvolatile memory device. The method includes receiving write data with a write request, detecting a number of free blocks, if the detected number of free blocks is less than a threshold value, allocating a log block only in accordance with a sub-block unit, but if the detected number of free blocks is not less than the threshold value, allocating the log block in accordance with one of the sub-block unit and a physical block unit, wherein the sub-block unit is smaller than the physical block unit.

Abstract: Disclosed is a method of writing data in a storage device including a nonvolatile memory device. The method includes receiving write data with a write request, detecting a number of free blocks, if the detected number of free blocks is less than a threshold value, allocating a log block only in accordance with a sub-block unit, but if the detected number of free blocks is not less than the threshold value, allocating the log block in accordance with one of the sub-block unit and a physical block unit, wherein the sub-block unit is smaller than the physical block unit.

Abstract: A memory system, including a flash memory including multiple memory blocks, and a controller configured to erase each of the memory blocks using multiple steps. The controller stores, for each of the memory blocks, metadata indicating which of the multiple steps have been completed, and erases each of the memory blocks based on the stored metadata.

Abstract: A memory system includes a flash memory including a block having first sub-blocks and second sub-blocks different from each other, the second sub-blocks including free pages only; and a controller configured to erase the flash memory in units of the sub-blocks, and in a garbage collection operation, the controller is configured to copy data of a valid page of the first sub-blocks to at least one of the second sub-blocks.

Abstract: Disclosed is a storage device which includes a nonvolatile memory device including a memory block a program order of which is adjusted regardless of an arrangement of memory cells, and a memory controller that performs address mapping to replace a bad page of the memory block with a normal page of the memory block.

Abstract: A memory system, comprising a flash memory comprising multiple memory blocks, and a controller configured to erase each of the memory blocks using multiple steps. The controller stores, for each of the memory blocks, metadata indicating which of the multiple steps have been completed, and erases each of the memory blocks based on the stored metadata.

Abstract: A memory system includes a flash memory including a block having first sub-blocks and second sub-blocks different from each other, the second sub-blocks including free pages only; and a controller configured to erase the flash memory in units of the sub-blocks, and in a garbage collection operation, the controller is configured to copy data of a valid page of the first sub-blocks to at least one of the second sub-blocks.

Abstract: Disclosed is a method of writing data in a storage device including a nonvolatile memory device. The method includes receiving write data with a write request, detecting a number of free blocks, if the detected number of free blocks is less than a threshold value, allocating a log block only in accordance with a sub-block unit, but if the detected number of free blocks is not less than the threshold value, allocating the log block in accordance with one of the sub-block unit and a physical block unit, wherein the sub-block unit is smaller than the physical block unit.

Abstract: Disclosed is a storage device which includes a nonvolatile memory device including a memory block a program order of which is adjusted regardless of an arrangement of memory cells, and a memory controller that performs address mapping to replace a bad page of the memory block with a normal page of the memory block.

Abstract: A demand paging apparatus and a method for an embedded system are provided. The demand paging apparatus includes a nonvolatile storage device, a physical memory, a demand paging window, and a demand paging manager. The nonvolatile storage device stores code and data which are handled by demand paging. The physical memory processes information about a requested page that is read from the nonvolatile storage device. The demand paging window generates a fault for the page and, thus, causes demand paging to occur. The demand paging window is part of an address space to which an application program stored in the nonvolatile storage device refers. The demand paging manager processes the page fault generated in the demand paging window.

Abstract: A demand paging apparatus and a method for an embedded system are provided. The demand paging apparatus includes a nonvolatile storage device, a physical memory, a demand paging window, and a demand paging manager. The nonvolatile storage device stores code and data which are handled by demand paging. The physical memory processes information about a requested page that is read from the nonvolatile storage device. The demand paging window generates a fault for the page and, thus, causes demand paging to occur. The demand paging window is part of an address space to which an application program stored in the nonvolatile storage device refers. The demand paging manager processes the page fault generated in the demand paging window.