Patents by Inventor Dong Hwa Kum

Dong Hwa Kum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6251240
    Abstract: A Mg—Ca sacrificial anode according to the present invention is disclosed, which is capable of providing a melts protection effect during a dissolution of Mg by adding Ca, which is a low melting point modification element, to Mg and obtaining characteristics which are equal to or better than a conventional Mg alloy group sacrificial anode in view of an open circuit potential and an anode efficiency.
    Type: Grant
    Filed: January 14, 2000
    Date of Patent: June 26, 2001
    Assignee: Korea Institute of Science and Technology
    Inventors: Dong Hwa Kum, Hye Sung Kim, Hyeon Joon Shin, Jung Gu Kim, Ji Young Byun
  • Patent number: 6099917
    Abstract: A method for modifying an (oxide) material of a substrate surface to a nitride material by radiating reactive ion particles having a certain amount of energy onto the substrate surface is disclosed. The thin film deposited on the surface-modified substrate has improved material properties. In particular, a surface treatment using ion beam is executed on an Al.sub.2 O.sub.3 substrate to initially form an AlN thin film, and then a GaN thin film is deposited on said AlN thin film. From this, it is possible to obtain a high quality GaN thin film having a better material property, compared with a GaN thin film according to the prior art.
    Type: Grant
    Filed: November 17, 1998
    Date of Patent: August 8, 2000
    Assignee: Korea Institute of Science and Technology
    Inventors: Seok-Keun Koh, Hyung-Jin Jung, Won-Kook Choi, Dong-Hwa Kum, DongJin Byun