Patents by Inventor Dong Hwa Shim

Dong Hwa Shim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8809941
    Abstract: A semiconductor device includes a semiconductor substrate having an active region defined by a device isolation structure. A recessed channel is formed on the semiconductor substrate under the active region. A recessed junction region is formed between the recessed channel and the device isolation structure adjacent to the recessed channel.
    Type: Grant
    Filed: October 25, 2007
    Date of Patent: August 19, 2014
    Assignee: Hynix Semiconductor Inc.
    Inventor: Dong Hwa Shim
  • Publication number: 20080173939
    Abstract: A semiconductor device includes a semiconductor substrate having an active region defined by a device isolation structure. A recessed channel is formed on the semiconductor substrate under the active region. A recessed junction region is formed between the recessed channel and the device isolation structure adjacent to the recessed channel.
    Type: Application
    Filed: October 25, 2007
    Publication date: July 24, 2008
    Inventor: Dong Hwa Shim