Abstract: A vehicle video record system includes a camera module for monitoring an area around a vehicle, a first memory for storing a video transmitted from the camera module, and a controller including a second memory configured to store a computer program for controlling storage of the video, and a processor configured to execute the computer program, where the camera module includes at least one camera having a view guide extending ahead of the at least one camera to block reflected light coming into a lens of the at least one camera from inside the vehicle, where a vertical field of view of the field of view increases from a center toward both ends along a horizontal expansion of the field of view.

Abstract: A nanoscale thin film structure and implementing method thereof, and, more specifically, a nanoscale thin film structure of which target structure is designed with quantized thickness, and a method to implement the nanoscale thin film structure by which the performance of the manufactured nanodevice can be implemented the same as the designed performance, thereby applicable to high sensitivity high performance electronic/optical sensor devices.

Abstract: A nanoscale thin film structure and implementing method thereof, and, more specifically, a nanoscale thin film structure of which target structure is designed with quantized thickness, and a method to implement the nanoscale thin film structure by which the performance of the manufactured nanodevice can be implemented the same as the designed performance, thereby applicable to high sensitivity high performance electronic/optical sensor devices.

Abstract: This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.

Abstract: This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.