Patents by Inventor Dong Hwan Ma

Dong Hwan Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Aluminum compounds and methods of forming aluminum- containing film using the same
    Patent number: 11912728
    Abstract: The present disclosure relates to a novel aluminum-containing compound, a method of preparing the aluminum-containing compound, a precursor composition for forming a film including the aluminum-containing precursor compound, and a method of forming an aluminum-containing film using the precursor composition for forming a film.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: February 27, 2024
    Assignee: UP CHEMICAL CO., LTD.
    Inventors: Won Seok Han, Dong Hwan Ma, Sungwoo Ahn, Dae-young Kim, Wonyong Koh
  • YTTRIUM/LANTHANIDE METAL PRECURSOR COMPOUND, COMPOSITION FOR FORMING FILM INCLUDING THE SAME, AND METHOD OF FORMING YTTRIUM/LANTHANIDE METAL CONTAINING FILM USING THE SAME
    Publication number: 20220325411
    Abstract: The present disclosure relates to an yttrium/lanthanide metal precursor compound, a precursor composition for depositing an yttrium/lanthanide metal-containing film including the yttrium/lanthanide metal precursor compound, and a method of depositing the yttrium/lanthanide metal-containing film using the precursor composition.
    Type: Application
    Filed: June 24, 2022
    Publication date: October 13, 2022
    Inventors: Jin Sik KIM, Myeong-Ho PARK, Dong Hwan MA, Yun Gyeong YI, Jun Hwan CHOI
  • ALUMINUM COMPOUNDS AND METHODS OF FORMING ALUMINUM- CONTAINING FILM USING THE SAME
    Publication number: 20210147450
    Abstract: The present disclosure relates to a novel aluminum-containing compound, a method of preparing the aluminum-containing compound, a precursor composition for forming a film including the aluminum-containing precursor compound, and a method of forming an aluminum-containing film using the precursor composition for forming a film.
    Type: Application
    Filed: January 25, 2021
    Publication date: May 20, 2021
    Inventors: Won Seok HAN, Dong Hwan MA, Sungwoo AHN, Dae-young KIM, Wonyong KOH
  • INDIUM-CONTAINING FILM AND COMPOSITION FOR FORMING THE SAME
    Publication number: 20160326008
    Abstract: The present invention relates to an indium-containing film formed by reacting a gas containing an indium precursor with an oxygen-containing gas on a substrate, and to a composition for forming the indium-containing film. Using chemical vapor deposition or atomic layer deposition, when a particular indium precursor is used, an indium-containing film having high conductivity and high quality can be formed on a substrate having a large area, and particularly a substrate for manufacturing a display device.
    Type: Application
    Filed: July 19, 2016
    Publication date: November 10, 2016
    Inventors: Wonyong Koh, Byungsoo Kim, Dong Hwan Ma
  • Indium-containing oxide film and preparing method thereof
    Patent number: 9431144
    Abstract: The present invention relates to an indium oxide film formed by chemical vapor deposition or atomic layer deposition, or to an oxide film containing indium, and to a method for forming same. By chemical vapor deposition or atomic layer deposition, wherein an indium material that is a liquid at room temperature is used, an oxide film containing indium can be formed on a substrate having a large area, and particularly a substrate for manufacturing a display device.
    Type: Grant
    Filed: July 24, 2014
    Date of Patent: August 30, 2016
    Assignee: UP Chemical Co., Ltd.
    Inventors: Wonyong Koh, Byungsoo Kim, Dong Hwan Ma
  • INDIUM-CONTAINING OXIDE FILM AND PREPARING METHOD THEREOF
    Publication number: 20140335363
    Abstract: The present invention relates to an indium oxide film formed by chemical vapor deposition or atomic layer deposition, or to an oxide film containing indium, and to a method for forming same. By chemical vapor deposition or atomic layer deposition, wherein an indium material that is a liquid at room temperature is used, an oxide film containing indium can be formed on a substrate having a large area, and particularly a substrate for manufacturing a display device.
    Type: Application
    Filed: July 24, 2014
    Publication date: November 13, 2014
    Inventors: Wonyong Koh, Byungsoo Kim, Dong Hwan Ma