Abstract: A plasma processing apparatus includes a chamber body including a chamber, an electrostatic chuck supporting a substrate within the chamber body and including a lower electrode, a high-frequency power supply device configured to supply high-frequency power to generate plasma with gas supplied to the chamber, and a bias power supply device configured to supply pulse power for ion acceleration to the lower electrode. The bias power supply device is configured to supply a positive voltage pulse having a duty ratio of (1-D) to the lower electrode when a target duty ratio D of an acceleration period for accelerating ions in the plasma during a process cycle exceeds a threshold.

Abstract: An example support assembly used in a substrate processing apparatus that process a substrate by using plasma includes a base member, a support plate disposed on the base member, an insulation member disposed on at least a partial region of an outer circumference of the base member, and a discharge passage located in the insulation member. The discharge passage has an outer end connected to an outer surface of the insulation member.

Abstract: A substrate processing apparatus includes: a ceramic puck supporting a substrate; and a pedestal arranged underneath the ceramic puck and to which a source radio frequency (RF) for generating plasma is applied, wherein a bias electrode, to which a non-sinusoidal generator voltage is applied, is arranged inside the ceramic puck.

Abstract: A plasma generation circuit includes a power generator including a first function output unit configured to generate a first harmonic signal and a second function output unit configured to generate a compensation signal; a load unit electrically connected to one side of the power generator and configured to transmit the first harmonic signal and the compensation signal to a sensor; and a controller connected to the power generator and the sensor, wherein the sensor is provided between the load unit and an electrode configured to generate plasma based on receiving the first harmonic signal and the compensation signal, the controller is configured to generate a control signal based on the first harmonic signal received from the sensor, and the second function output unit is configured to generate the compensation signal based on the control signal.

Abstract: Provided is a plasma processing apparatus. The plasma processing apparatus includes a chamber where a wafer is configured to be mounted, a source power configured to provide a source voltage to generate a plasma in the chamber, a multi-level pulse circuit configured to generate a wafer voltage to accelerate ions in the plasma, and generate a pulse signal including a first pulse voltage, a second pulse voltage having a level lower than the first pulse voltage, and a third pulse voltage different from the first and second pulse voltages and having a level higher than the second pulse voltage, which are sequentially output, and an arbitrary voltage compensation circuit configured to provide a compensation voltage non-linearly changed to at least one of the first to third pulse voltages.

Abstract: An example substrate processing method comprises placing a substrate into a substrate processing apparatus, supplying the substrate processing apparatus with a process gas, and controlling plasma in the substrate processing apparatus. The step of controlling the plasma includes controlling the plasma in a first mode, controlling the plasma in a second mode after a termination of the first mode, and after a termination of the second mode, controlling the plasma in a third mode. The step of controlling the plasma in the first mode includes applying a first non-sinusoidal voltage to the substrate processing apparatus. A duty of the first non-sinusoidal voltage is changed based on the first mode being advanced.

Abstract: A method of processing a substrate is provided. The method includes providing the substrate on a stage of a substrate processing apparatus; and processing the substrate on the stage. The processing of the substrate includes: providing source power to the substrate processing apparatus; and providing bias power to the substrate processing apparatus. The providing of the bias power to the substrate processing apparatus includes: providing a first non-sinusoidal wave to a plasma electrode of the stage; and providing a second non-sinusoidal wave to an edge electrode of the stage. A duty ratio of the second non-sinusoidal wave is different from a duty ratio of the first non-sinusoidal wave.

Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

Abstract: A substrate processing method including: placing a substrate in a substrate processing apparatus; applying source power to the substrate processing apparatus; and applying bias power to the substrate processing apparatus, wherein applying the source power to the substrate processing apparatus includes: providing the substrate processing apparatus with a first radio-frequency (RF) power with a first pulse having a first period; and providing the substrate processing apparatus with a second RF power with a second pulse having a second period, wherein the first period is longer than the second period.

Abstract: A magnetic element assembly includes a magnetic member having a circular ring shape or an arc shape, and at least one focusing member made of a ferromagnetic material, connected to the magnetic member, and configured to adjust distribution of a magnetic force in a peripheral space, where the at least one focusing member includes a connection portion connected to the magnetic member and at least one focusing portion extending downward from the connection portion.

Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

Abstract: A substrate processing apparatus according to an embodiment includes: a chamber providing a processing space; a support member disposed in the processing space and configured to support a substrate during a process treatment; an antenna providing energy for plasma excitation into the processing space; and an inner electromagnet disposed outside the processing space.

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

Abstract: A plasma control apparatus includes a first transmission line and a second transmission line transferring radio frequency (RF) power to a plasma chamber, a matcher disposed on the first transmission line a first plasma control circuit disposed on the first transmission line and configured to selectively and independently control harmonics of one or more of the at least two frequencies, a sensor configured to sense the harmonics of the plasma chamber, and an auxiliary RF power source disposed on the second transmission line and configured to generate auxiliary RF power to cancel out the harmonics sensed by the sensor, wherein, in a plan view, the first transmission line transfers the RF power adjacent to the center of the plasma chamber, and the second transmission line transfers the RF power and the auxiliary RF power and the auxiliary RF power adjacent to an edge of the plasma chamber.

Abstract: A plasma processing apparatus includes a wafer support fixture in the chamber and configured to support a wafer, an upper electrode in the chamber and spaced apart from the wafter support fixture, a magnet assembly configured to apply a magnetic field into a chamber, the magnet assembly including a plurality of first magnets and a plurality of second magnets arranged in an annular shape, and a horizontal distance from a central axis of the chamber to each of the plurality of first magnets and each of the plurality of second magnets is less than a radius of the wafer.

Abstract: A plasma processing apparatus includes: a plasma chamber including a first area and a second area; a first radio frequency (RF) power source transmitting pieces of first RF power to the first area; a second RF power source transmitting second RF power to the second area; a controller configured to control the first RF power source and the second RF power source; and a first coil and a second coil arranged in the second area, wherein the controller spatially controls plasma in the first and second areas by controlling a signal of a current applied to the first coil and a signal of a current applied to the second coil, and temporally controls the plasma in the first and second areas by controlling a signal of the first RF power transmitted from the first RF power source and a signal of the second RF power transmitted from the second RF power source.

Abstract: A chuck assembly includes a chuck base including a lower base and an upper base that is on the lower base, a ceramic plate on the upper base, an isolator ring enclosing an outer sidewall of the lower base, a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base, and a pad that is between the edge portion of the lower base and the focus ring. The pad may contain a nonmetal conductive material.

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.