Abstract: A microspeaker enclosure includes a microspeaker, an enclosure case in which the microspeaker is mounted, including a back volume communicating with the microspeaker, a block installed in the back volume and formed of a porous material serving as a virtual back volume by adsorbing air, and porous particles installed in the back volume and serving as a virtual back volume by adsorbing air.

Abstract: Provided is a block formed of a porous material. In the block formed of a porous material, which is mounted together with a microspeaker in an enclosure case to adsorb air to serve as a virtual back volume, the block is manufactured by blocking porous particles including silicon and aluminum, and in a pore diameter of the porous block, dV/dlog(D) pore volume at 20 nm is 0.1 cm3/g or more.

Abstract: A gas sensor and a method for fabricating the same includes a semiconductor substrate, a supporting layer formed on the semiconductor substrate, the supporting layer being electrically insulative and having a pattern groove formed therein, a heater formed in the pattern groove, an electrically insulating layer formed on the heater and the supporting layer, an electrode formed on the insulating layer, and a sensing layer formed on the electrode and the insulating layer to detect a target gas of interest according to a measured change in electrical conductivity or resistance thereof.

Abstract: Air pollution gas sensor which efficiently detects smell from smoking, ordinary stinks such as TMA and CH3SH, smell of Kimchi, acetaldehyde, and etc. and also a method for fabricating the same is revealed and described including a substrate, a heater formed on said substrate, electrodes each formed on said substrate insulated from the heater, and a sensing layer formed of SnO.sub.2, including WO.sub.3 on said substrate including said electrodes, with the method for fabricating the gas sensor including the steps of forming the heater on the substrate, forming the electrodes on the substrate insulated from the heater, and forming a sensing layer of SnO.sub.2 including WO.sub.3 on the substrate including the electrodes.