Abstract: Disclosed are a photoelectrochemical electrode and a method of manufacturing the same, which enable mass production at low cost. The photoelectrochemical electrode manufactured by forming a transition metal dichalcogenide layer on all or part of the surface of a porous substrate includes a porous substrate and a metal dichalcogenide layer on all or part of the surface of the porous substrate, thus improving photoelectrode characteristics and photocatalytic efficiency.

Abstract: Provided is a method for preparing boron nitride nanotubes, the method including: injecting a boron-metal catalyst composite into a reaction chamber; injecting a nitrogen precursor into the reaction chamber; producing a decomposition product of the boron-metal catalyst composite in a gas state by irradiating the boron-metal catalyst composite with a carbon dioxide laser or a free electron laser; and forming boron nitride nanotubes by reacting the decomposition product of the boron-metal catalyst composite in the gas state with the nitrogen precursor.

Abstract: Provided is a method for preparing boron nitride nanotubes, the method including: injecting a boron-metal catalyst composite into a reaction chamber; injecting a nitrogen precursor into the reaction chamber; producing a decomposition product of the boron-metal catalyst composite in a gas state by irradiating the boron-metal catalyst composite with a carbon dioxide laser or a free electron laser; and forming boron nitride nanotubes by reacting the decomposition product of the boron-metal catalyst composite in the gas state with the nitrogen precursor.

Abstract: The present invention relates to a photocatalyst using a semiconductor-carbon nanomaterial core-shell composite quantum dot and a method for preparing the same, more particularly to a microparticle in which a semiconductor-carbon nanomaterial core-shell composite quantum dot is self-assembled using 4-aminophenol, capable of improving photoelectrochemical response and photoconversion efficiency when used as a photocatalyst or a photoelectrode of a photoelectrochemical device, a photoelectrochemical device using the same and a method for preparing the same.

Abstract: A method of transferring materials by using petroleum jelly is provided. An example of the method involves forming a material on a first substrate, forming a transfer support made from petroleum jelly on the material, removing the first substrate, stacking the material and the petroleum jelly transfer support after removing the first substrate on a second substrate, and removing the petroleum jelly transfer support.

Abstract: A method of transferring materials by using petroleum jelly is provided. An example of the method involves forming a material on a first substrate, forming a transfer support made from petroleum jelly on the material, removing the first substrate, stacking the material and the petroleum jelly transfer support after removing the first substrate on a second substrate, and removing the petroleum jelly transfer support.

Abstract: The present invention relates to a photocatalyst using a semiconductor-carbon nanomaterial core-shell composite quantum dot and a method for preparing the same, more particularly to a microparticle in which a semiconductor-carbon nanomaterial core-shell composite quantum dot is self-assembled using 4-aminophenol, capable of improving photoelectochemical response and photoconversion efficiency when used as a photocatalyst or a photoelectrode of a photoelectochemical device, a photoelectochemical device using the same and a method for preparing the same.

Abstract: The present invention relates to a high-efficiency organic photovoltaic cell using surface plasmon effect of an induced dipole polymer-metal nanoparticle hybrid and a method for fabricating the same. More particularly, it relates to a high-efficiency organic photovoltaic cell whose photoelectric efficiency is maximized by depositing an induced dipole polymer-metal nanoparticle hybrid in or on a hole injection layer, thereby enhancing surface plasmonic properties, and a method for fabricating the same.

Abstract: Disclosed are methods for preparing pure graphene using chemical bonding between graphite oxide and metal oxide nanoparticles, and graphene and nanoparticles having a quasi metal oxide-graphene core-shell prepared therefrom. The disclosed methods for preparing graphene allow chemical bonding and separation through a simple acid treatment process using inexpensive materials. Also, because the reaction can be carried out at low temperature, the processing cost is low. And, pure graphene with few impurities can be prepared quickly in large scale.

Abstract: Disclosed is a method of preparing metal oxide semiconductor-graphene core-shell quantum dots by chemically linking graphenes with superior electrical properties to a metal oxide semiconductor, and a method of fabricating a light emitting diode by using the same. The light emitting diode according to the present invention has the advantages that it shows excellent power conversion efficiency, the cost for materials and equipments required for its fabrication can be reduced, its fabricating process is simple, and it is possible to mass-produce and enlarge the size of display based on a quantum dot light emitting diode. Further, the present invention relates to core-shell quantum dots that can be used in fabricating a light emitting diode with a different wavelength by using various multi-component metal oxide semiconductors and a fabricating method thereof.

Abstract: Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure.

Abstract: Example embodiments are directed to an electronic device and a method for manufacturing the same. The electronic device includes a polymer thin film and an electrode. The polymer thin film includes nanoparticles. The electrode is formed by attaching a graphene thin film of a sheet shape formed through graphene deposition using a vapor carbon supply source to the polymer thin film. In the method, a graphene thin film of a sheet shape is formed through graphene deposition using a vapor carbon supply source. A polymer solution with distributed nanoparticles is prepared. The polymer solution with distributed nanoparticles is spin-coated on a substrate. A polymer thin film comprising the nanoparticles is formed by drying the spin-coated polymer solution. An electrode is formed by attaching the graphene thin film onto the polymer thin film.

Abstract: Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.

Abstract: Disclosed are a method for preparing pure graphene using chemical bonding between graphite oxide and metal oxide nanoparticles, and graphene and nanoparticles having a quasi metal oxide-graphene core-shell prepared therefrom. The disclosed method for preparing graphene allows chemical bonding and separation through a simple acid treatment process using inexpensive materials. Also, because the reaction can be carried out at low temperature, the processing cost is low. And, pure graphene with few impurities can be prepared quickly in large scale.

Abstract: Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.

Abstract: Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure.

Abstract: Example embodiments are directed to an electronic device and a method for manufacturing the same. The electronic device includes a polymer thin film and an electrode. The polymer thin film includes nanoparticles. The electrode is formed by attaching a graphene thin film of a sheet shape formed through graphene deposition using a vapor carbon supply source to the polymer thin film. In the method, a graphene thin film of a sheet shape is formed through graphene deposition using a vapor carbon supply source. A polymer solution with distributed nanoparticles is prepared. The polymer solution with distributed nanoparticles is spin-coated on a substrate. A polymer thin film comprising the nanoparticles is formed by drying the spin-coated polymer solution. An electrode is formed by attaching the graphene thin film onto the polymer thin film.

Abstract: A high-efficiency solar cell device of the present invention comprising an active layer composed of a p-i-n form polymer-quantum dot composite having a consolidated core/shell structure which is formed by heating a coating layer of a solution of an organic-inorganic mixture of a p-type organic polymer, an n-type organic compound, and a semiconductor quantum dot dissolved in an organic solvent is capable of overcoming the shortcoming of the conventional solar cell devices having a multi-layered thin film structure.

Abstract: The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage.

Abstract: The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage.