Abstract: Provided is a semiconductor device comprising an active region on a substrate and including first and second sidewalls extending in a first direction and an epitaxial pattern on the active region, wherein the epitaxial pattern includes first and second epitaxial sidewalls extending from the first and second sidewalls, respectively, the first epitaxial sidewall includes a first epitaxial lower sidewall, a first epitaxial upper sidewall, and a first epitaxial connecting sidewall connecting the first epitaxial lower sidewall and the first epitaxial upper sidewall, the second epitaxial sidewall includes a second epitaxial lower sidewall, a second epitaxial upper sidewall, and a second epitaxial connecting sidewall connecting the second epitaxial lower sidewall and the second epitaxial upper sidewall, a distance between the first and second epitaxial upper sidewalls decreases away from the active region, and the first and second epitaxial lower sidewalls extend in parallel to a top surface of the substrate.

Abstract: A method for manufacturing a LiDAR device is proposed. The method may include providing a LiDAR module including a laser emitting module and a laser detecting module to a target region. The method may also include adjusting, on the basis of first detecting data obtained from the laser detecting module, a relative position of a detecting optic module with respect to the laser detecting module. The method may further include adjusting, on the basis of image data obtained from at least one image sensor, a relative position of an emitting optic module with respect to the laser emitting module.

Abstract: A semiconductor device may include a substrate including a first region and a second region and a first active pattern on the first region. The first active pattern may include a pair of first source/drain patterns and a first channel pattern therebetween, and the first channel pattern may include a plurality of first semiconductor patterns stacked on the substrate. The semiconductor device may further include a first gate electrode, which is provided on the first channel patterns, and a supporting pattern, which is provided on side surfaces of the plurality of first semiconductor patterns to connect the side surfaces of the plurality of first semiconductor patterns to each other.

Abstract: Disclosed are semiconductor devices and/or method of fabricating the same. The semiconductor device comprises a substrate including first and second regions, a first active pattern on the first region and including a pair of first source/drain patterns and a first channel pattern including first semiconductor patterns, a second active pattern on the second region and including a pair of second source/drain patterns and a second channel pattern including second semiconductor patterns, a support pattern between two vertically adjacent first semiconductor patterns, and a first gate electrode and a second gate electrode on the first channel pattern and the second channel pattern. A channel length of the first channel pattern is greater than that of the second channel pattern. A ratio of a width of the support pattern to the channel length of the first channel pattern is in a range of 0.05 to 0.2.

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

Abstract: A semiconductor device includes a substrate, a plurality of channel layers stacked on the substrate, a gate electrode surrounding the plurality of channel layers, and embedded source/drain layers on opposing sides of the gate electrode. The embedded source/drain layers each have a first region and a second region on the first region. The second region has a plurality of layers having different compositions.

Abstract: A semiconductor device includes a first transistor in a first region of a substrate and a second transistor in a second region of the substrate. The first transistor includes multiple first semiconductor patterns; a first gate electrode; a first gate dielectric layer; a first source/drain region; and an inner-insulating spacer. The second transistor includes multiple second semiconductor patterns; a second gate electrode; a second gate dielectric layer; and a second source/drain region. The second gate dielectric layer extends between the second gate electrode and the second source/drain region and is in contact with the second source/drain region. The first source/drain region is not in contact with the first gate dielectric layer.

Abstract: A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.

Abstract: A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.

Abstract: An integrated circuit device includes: a fin-type active area including a fin top surface on a top portion and an anti-punch-through recess having a lowermost level lower than a level of the fin top surface; a nanosheet stack facing the fin top surface, the nanosheet stack including a plurality of nanosheets having vertical distances different from each other from the fin top surface; a gate structure surrounding each of the plurality of nanosheets; a source/drain region having a side wall facing at least one of the plurality of nanosheets; and an anti-punch-through semiconductor layer including a first portion filling the anti-punch-through recess, and a second portion being in contact with a side wall of a first nanosheet most adjacent to the fin-type active area among the plurality of nanosheets, the anti-punch-through semiconductor layer including a material different from a material of the source/drain region.

Abstract: A semiconductor device includes a first transistor in a first region of a substrate and a second transistor in a second region of the substrate. The first transistor includes multiple first semiconductor patterns; a first gate electrode; a first gate dielectric layer; a first source/drain region; and an inner-insulating spacer. The second transistor includes multiple second semiconductor patterns; a second gate electrode; a second gate dielectric layer; and a second source/drain region. The second gate dielectric layer extends between the second gate electrode and the second source/drain region and is in contact with the second source/drain region. The first source/drain region is not in contact with the first gate dielectric layer.

Abstract: Semiconductor devices are provided. The semiconductor devices may include a first wire pattern extending in a first direction on a substrate and a second wire pattern on the first wire pattern. The second wire pattern may be spaced apart from the first wire pattern and extends in the first direction. The semiconductor devices may also include a first gate structure at least partially surrounding the first wire pattern and the second wire pattern, a second gate structure spaced apart from the first gate structure in the first direction, a first source/drain region between the first gate structure and the second gate structure, a first spacer between a bottom surface of the first source/drain region and the substrate, a first source/drain contact on the first source/drain region, and a second spacer between the first source/drain contact and the first gate structure.

Abstract: A semiconductor device includes a channel pattern including a first semiconductor pattern and a second semiconductor pattern, which are sequentially stacked on a substrate, and a gate electrode that extends in a first direction and crosses the channel pattern. The gate electrode includes a first portion interposed between the substrate and the first semiconductor pattern and a second portion interposed between the first and second semiconductor patterns. A maximum width in a second direction of the first portion is greater than a maximum width in the second direction of the second portion, and a maximum length in the second direction of the second semiconductor pattern is less than a maximum length in the second direction of the first semiconductor pattern.

Abstract: A semiconductor device including a fin field effect transistor (fin-FET) includes active fins disposed on a substrate, isolation layers on both sides of the active fins, a gate structure formed to cross the active fins and the isolation layers, source/drain regions on the active fins on sidewalls of the gate structure, a first interlayer insulating layer on the isolation layers in contact with portions of the sidewalls of the gate structure and portions of surfaces of the source/drain regions, an etch stop layer configured to overlap the first interlayer insulating layer, the sidewalls of the gate structure, and the source/drain regions, and contact plugs formed to pass through the etch stop layer to contact the source/drain regions. The source/drain regions have main growth portions in contact with upper surfaces of the active fins.

Abstract: A semiconductor device may include first channels on a first region of a substrate and spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, second channels on a second region of the substrate and spaced apart from each other in the vertical direction, a first gate structure on the first region of the substrate and covering at least a portion of a surface of each of the first channels, and a second gate structure on the second region of the substrate and covering at least a portion of a surface of each of the second channels. The second channels may be disposed at heights substantially the same as those of corresponding ones of the first channels, and a height of a lowermost one of the second channels may be greater than a height of a lowermost one of the first channels.

Abstract: A semiconductor memory device includes a cell area and a peripheral area, a base insulating layer including opposed first front and rear surfaces in the cell area, a first semiconductor substrate including opposed second front and rear surfaces in the peripheral area, an active pattern on the first front surface, a first conductive line extending in a first direction on a side of the active pattern, a capacitor structure on the active pattern, a first circuit element on the second front surface, and a second conductive line extending in a second direction intersecting the first direction on the first rear surface and the second rear surface. The active pattern extends in a vertical direction intersecting the first direction and the second direction to electrically connect the second conductive line to the capacitor structure.

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first region of the substrate, a first gate electrode surrounding a periphery of the first nanowire, a second nanowire spaced apart from a second region of the substrate and extending in a first direction and having a first width in a second direction intersecting the first direction, a supporting pattern contacting the second nanowire and positioned under the second nanowire, and a second gate electrode extending in the second direction and surrounding the second nanowire and the supporting pattern.

Abstract: An semiconductor device is provided. A fin is disposed on a substrate, extending in a lengthwise direction. A first recess is disposed on a sidewall of the fin so that the fin and the first recess is arranged in a straight line along the lengthwise direction. A gate structure crosses the fin in the first direction crossing the lengthwise direction. A spacer is disposed on sidewalk of the gate structure. A source/drain region is disposed in the first recess. The source/drain region is formed under the spacer. A silicide layer is disposed on the source/drain region. The silicide layer and the source/drain region fill the first recess.