Patents by Inventor Dong-Il Byun

Dong-Il Byun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistor and manufacturing method thereof
    Patent number: 7390711
    Abstract: A MOS transistor including a gate insulation layer and a gate electrode layer on a channel region of a semiconductor substrate. A gate spacer layer is formed on a sidewall of the electrode layer and the insulation layer. The transistor includes a deep extended source/drain region, a first source/drain region that is deeper than the extended source/drain region, and a second source/drain region that is shallower than the extended source/drain region.
    Type: Grant
    Filed: December 15, 2005
    Date of Patent: June 24, 2008
    Assignee: Dongbu Electronics Co., Ltd.
    Inventor: Dong-Il Byun
  • MOS transistor and manufacturing method thereof
    Publication number: 20060124969
    Abstract: A MOS transistor including a gate insulation layer and a gate electrode layer on a channel region of a semiconductor substrate. A gate spacer layer is formed on a sidewall of the electrode layer and the insulation layer. The transistor includes a deep extended source/drain region, a first source/drain region that is deeper than the extended source/drain region, and a second source/drain region that is shallower than the extended source/drain region.
    Type: Application
    Filed: December 15, 2005
    Publication date: June 15, 2006
    Applicant: DongbuAnam Semiconductor Inc.
    Inventor: Dong-Il Byun