Patents by Inventor Dong-il Song

Dong-il Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10665723
    Abstract: A semiconductor device includes a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding portions and separated from each other; gate electrodes provided on the substrate and surrounding the nanowires; source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and first voids provided between the source/drain regions and the protruding portions.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: May 26, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Min Song, Woo Seok Park, Geum Jong Bae, Dong Il Bae, Jung Gil Yang
  • Patent number: 10629740
    Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: April 21, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-Gil Yang, Beom-Jin Park, Seung-Min Song, Geum-Jong Bae, Dong-Il Bae
  • Publication number: 20190393315
    Abstract: A semiconductor device including a fin field effect transistor (fin-FET) includes active fins disposed on a substrate, isolation layers on both sides of the active fins, a gate structure formed to cross the active fins and the isolation layers, source/drain regions on the active fins on sidewalls of the gate structure, a first interlayer insulating layer on the isolation layers in contact with portions of the sidewalls of the gate structure and portions of surfaces of the source/drain regions, an etch stop layer configured to overlap the first interlayer insulating layer, the sidewalls of the gate structure, and the source/drain regions, and contact plugs formed to pass through the etch stop layer to contact the source/drain regions. The source/drain regions have main growth portions in contact with upper surfaces of the active fins.
    Type: Application
    Filed: November 30, 2018
    Publication date: December 26, 2019
    Inventors: Chang Woo NOH, Seung Min Song, Geum Jong Bae, Dong Il Bae
  • Publication number: 20190363086
    Abstract: A semiconductor device includes a first transistor in a first region and a second transistor in a second region. The first transistor includes: a first nanowire, a first gate electrode, a first gate dielectric layer, a first source/drain region, and an inner-insulating spacer. The first nanowire has a first channel region. The first gate electrode surrounds the first nanowire. The first gate dielectric layer is between the first nanowire and the first gate electrode. The first source/drain region is connected to an edge of the first nanowire. The inner-insulating spacer is between the first gate dielectric layer and the first source/drain region. The second transistor includes a second nanowire, a second gate electrode, a second gate dielectric layer, and a second source/drain region. The second nanowire has a second channel region. The second gate electrode surrounds the second nanowire. The second gate dielectric layer is between the second nanowire and the second gate electrode.
    Type: Application
    Filed: August 7, 2019
    Publication date: November 28, 2019
    Inventors: JUNG-GIL YANG, GEUM-JONG BAE, DONG-IL BAE, SEUNG-MIN SONG, WOO-SEOK PARK
  • Patent number: 10470131
    Abstract: An electronic device according to various embodiments may include a communication circuit, including a reception circuit and a transmission circuit, and a processor. The processor may be configured to: receive at least one piece of identification information corresponding to at least one external electronic device for providing a traffic-related signal to at least one vehicle outside the electronic device, via the reception circuit, identify the position of the electronic device, based at least on the at least one piece of identification information, and activate the transmission circuit to transmit movement-related information of the electronic device to the at least one vehicle or the at least one external electronic device, based at least on the position.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: November 5, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Il Son, A-Reum Choi, Sun-Min Hwang, Ga-Jin Song, Ki-Ho Cho, Jong-Sung Joo
  • Patent number: 10431585
    Abstract: A semiconductor device includes a first transistor in a first region and a second transistor in a second region. The first transistor includes: a first nanowire, a first gate electrode, a first gate dielectric layer, a first source/drain region, and an inner-insulating spacer. The first nanowire has a first channel region. The first gate electrode surrounds the first nanowire. The first gate dielectric layer is between the first nanowire and the first gate electrode. The first source/drain region is connected to an edge of the first nanowire. The inner-insulating spacer is between the first gate dielectric layer and the first source/drain region. The second transistor includes a second nanowire, a second gate electrode, a second gate dielectric layer, and a second source/drain region. The second nanowire has a second channel region. The second gate electrode surrounds the second nanowire. The second gate dielectric layer is between the second nanowire and the second gate electrode.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: October 1, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Gil Yang, Geum-Jong Bae, Dong-Il Bae, Seung-Min Song, Woo-Seok Park
  • Patent number: 10362430
    Abstract: An electronic device may comprise: a sensing unit for acquiring image data and sensing an object and a user; an output unit for outputting audio; and a processor for receiving image data from the sensing unit, rendering information on a space from the image data to generate space information, recognizing the object in the space and mapping the object to the space information, recognizing the user in the space, and controlling the output unit on the basis of position information of the object and the user when a notification associated with the object occurs.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: July 23, 2019
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Dong-Il Son, Chi-Hyun Cho, Chang-Ryong Heo, Ji-Ho Chang, Hee-Yeon Jeong, Jung-Su Ha, Mi-Jeong Song
  • Patent number: 10347718
    Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first region of the substrate, a first gate electrode surrounding a periphery of the first nanowire, a second nanowire spaced apart from a second region of the substrate and extending in a first direction and having a first width in a second direction intersecting the first direction, a supporting pattern contacting the second nanowire and positioned under the second nanowire, and a second gate electrode extending in the second direction and surrounding the second nanowire and the supporting pattern.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: July 9, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Gil Yang, Dong Il Bae, Chang Woo Sohn, Seung Min Song, Dong Hun Lee
  • Publication number: 20190157444
    Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.
    Type: Application
    Filed: August 28, 2018
    Publication date: May 23, 2019
    Inventors: Jung-Gil Yang, Beom-Jin Park, Seung-Min Song, Geum-Jong Bae, Dong-Il Bae
  • Publication number: 20190146551
    Abstract: An electronic apparatus, including an emissive display configured to provide a first image having a first image quality; a transparent display disposed on the emissive display and configured to provide a second image having a second image quality; and a controller configured to control the emissive display to provide the first image in according to first mode and control the transparent display to provide the second image according to a second mode.
    Type: Application
    Filed: January 14, 2019
    Publication date: May 16, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-ho KIM, Joo-ho Kim, Jin Ra, Jong-hyun Ryu, Moon-il Jung, Hyun-min Song, Hong-suk Kim, Dong-hyun Sohn
  • Patent number: 9007228
    Abstract: An Ethernet-based transmission system using a dying gasp according to the present invention includes an SMPS for supplying power to an Ethernet-based lower level system, detecting a state of a power fault, and outputting a dying gasp alarm signal. A CPU receives the dying gasp alarm signal, and generates and transmits an alarm packet. A PHY chip receives the alarm packet, and uplinks the alarm packet so that the alarm packet is transferred to a higher level stage. An L3 switch receives the alarm packet and determines whether a power fault has occurred in the lower level system. Accordingly, the present invention applies a dying gasp to an Ethernet-based or EPON-based transmission system and is then capable of generating and transmitting an alarm packet so that when a power fault occurs, a device in a higher level network can rapidly determine the occurrence of the power fault.
    Type: Grant
    Filed: July 2, 2013
    Date of Patent: April 14, 2015
    Assignee: UBIQUOSS Inc.
    Inventors: Dong Il Song, Min-kyu Cho
  • Publication number: 20140009298
    Abstract: An Ethernet-based transmission system using a dying gasp according to the present invention includes an SMPS for supplying power to an Ethernet-based lower level system, detecting a state of a power fault, and outputting a dying gasp alarm signal. A CPU receives the dying gasp alarm signal, and generates and transmits an alarm packet. A PHY chip receives the alarm packet, and uplinks the alarm packet so that the alarm packet is transferred to a higher level stage. An L3 switch receives the alarm packet and determines whether a power fault has occurred in the lower level system. Accordingly, the present invention applies a dying gasp to an Ethernet-based or EPON-based transmission system and is then capable of generating and transmitting an alarm packet so that when a power fault occurs, a device in a higher level network can rapidly determine the occurrence of the power fault.
    Type: Application
    Filed: July 2, 2013
    Publication date: January 9, 2014
    Applicant: UBIQUOSS Inc.
    Inventors: Dong Il Song, Min-kyu Cho
  • Patent number: 8379673
    Abstract: A digital broadcasting transmitter, a turbo stream processing method thereof, and a digital broadcasting system having the same. The digital broadcasting transmitter includes a first compressor, forming a normal stream by compressing audio and video signals in a first compression format, a second compressor, forming a turbo stream by compressing the audio and video signals in a second compression format, a transport stream (TS) constructor, compressing the turbo stream in an H.264 format and forming the dual transfer stream by multiplexing the normal stream and the turbo stream, and a TS processor, robustly processing the dual transfer stream transmitted from the TS constructor, thus enhancing the transmission efficiency.
    Type: Grant
    Filed: October 30, 2008
    Date of Patent: February 19, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-il Song, Hae-joo Jeong, Jung-pil Yu
  • Patent number: 8275004
    Abstract: A digital broadcasting transmitter, a turbo stream processing method thereof, and a digital broadcasting system having the same. The digital broadcasting transmitter includes a first compressor, forming a normal stream by compressing audio and video signals in a first compression format, a second compressor, forming a turbo stream by compressing the audio and video signals in a second compression format, a transport stream (TS) constructor, compressing the turbo stream in an H.264 format and forming the dual transfer stream by multiplexing the normal stream and the turbo stream, and a TS processor, robustly processing the dual transfer stream transmitted from the TS constructor, thus enhancing the transmission efficiency.
    Type: Grant
    Filed: October 30, 2008
    Date of Patent: September 25, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-il Song, Hae-joo Jeong, Jung-pil Yu
  • Patent number: 8194705
    Abstract: A method of formatting a digital broadcast transport stream packet, a digital broadcast transmitter, and a signal processing method thereof, includes constructing a transport stream packet that includes a stuffing region for an insertion of a known supplementary reference signal (SRS) data therein, randomizing the packet that includes the stuffing region is randomized, and the SRS data is inserted into the stuffing region of the randomized packet. Adding a parity for an error correction to the packet into which the SRS data has been inserted, the packet to which the parity has been added is interleaved, and a trellis encoding of the interleaved packet is performed. Inserting a segment sync signal and a field sync signal into the trellis-encoded packet, and a vestigial side band (VSB) modulation and an RF conversion of the packet are performed to transmit the VSB-modulated and RF-converted packet.
    Type: Grant
    Filed: October 10, 2008
    Date of Patent: June 5, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eui-jun Park, Dong-il Song, Choon-sik Jung, Jin-hee Jeong, Hee-beom Kang, Jong-hun Kim
  • Patent number: 8184695
    Abstract: A digital broadcasting transmitter, a turbo stream processing method thereof, and a digital broadcasting system having the same. The digital broadcasting transmitter includes a first compressor, forming a normal stream by compressing audio and video signals in a first compression format, a second compressor, forming a turbo stream by compressing the audio and video signals in a second compression format, a transport stream (TS) constructor, compressing the turbo stream in an H.264 format and forming the dual transfer stream by multiplexing the normal stream and the turbo stream, and a TS processor, robustly processing the dual transfer stream transmitted from the TS constructor, thus enhancing the transmission efficiency.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: May 22, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-il Song, Hae-joo Jeong, Jung-pil Yu
  • Patent number: 8135044
    Abstract: A method of formatting a digital broadcast transport stream packet, a digital broadcast transmitter, and a signal processing method thereof, includes constructing a transport stream packet that includes a stuffing region for an insertion of a known supplementary reference signal (SRS) data therein, randomizing the packet that includes the stuffing region is randomized, and the SRS data is inserted into the stuffing region of the randomized packet. Adding a parity for an error correction to the packet into which the SRS data has been inserted, the packet to which the parity has been added is interleaved, and a trellis encoding of the interleaved packet is performed. Inserting a segment sync signal and a field sync signal into the trellis-encoded packet, and a vestigial side band (VSB) modulation and an RF conversion of the packet are performed to transmit the VSB-modulated and RF-converted packet.
    Type: Grant
    Filed: October 10, 2008
    Date of Patent: March 13, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eui-jun Park, Dong-il Song, Choon-sik Jung, Jin-hee Jeong, Hee-beom Kang, Jong-hun Kim
  • Patent number: 8130798
    Abstract: A method of formatting a digital broadcast transport stream packet, a digital broadcast transmitter, and a signal processing method thereof, includes constructing a transport stream packet that includes a stuffing region for an insertion of a known supplementary reference signal (SRS) data therein, randomizing the packet that includes the stuffing region is randomized, and the SRS data is inserted into the stuffing region of the randomized packet. Adding a parity for an error correction to the packet into which the SRS data has been inserted, the packet to which the parity has been added is interleaved, and a trellis encoding of the interleaved packet is performed. Inserting a segment sync signal and a field sync signal into the trellis-encoded packet, and a vestigial side band (VSB) modulation and an RF conversion of the packet are performed to transmit the VSB-modulated and RF-converted packet.
    Type: Grant
    Filed: October 10, 2008
    Date of Patent: March 6, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eui-jun Park, Dong-il Song, Choon-sik Jung, Jin-hee Jeong, Hee-beom Kang, Jong-hun Kim
  • Patent number: 8009704
    Abstract: A digital broadcasting transmitter, a turbo stream processing method thereof, and a digital broadcasting system having the same. The digital broadcasting transmitter includes a first compressor, forming a normal stream by compressing audio and video signals in a first compression format, a second compressor, forming a turbo stream by compressing the audio and video signals in a second compression format, a transport stream (TS) constructor, compressing the turbo stream in an H.264 format and forming the dual transfer stream by multiplexing the normal stream and the turbo stream, and a TS processor, robustly processing the dual transfer stream transmitted from the TS constructor, thus enhancing the transmission efficiency.
    Type: Grant
    Filed: October 30, 2008
    Date of Patent: August 30, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-il Song, Hae-joo Jeong, Jung-pil Yu
  • Patent number: 7920622
    Abstract: A digital broadcasting transmitter, a turbo stream processing method thereof, and a digital broadcasting system having the same. The digital broadcasting transmitter includes a first compressor, forming a normal stream by compressing audio and video signals in a first compression format, a second compressor, forming a turbo stream by compressing the audio and video signals in a second compression format, a transport stream (TS) constructor, compressing the turbo stream in an H.264 format and forming the dual transfer stream by multiplexing the normal stream and the turbo stream, and a TS processor, robustly processing the dual transfer stream transmitted from the TS constructor, thus enhancing the transmission efficiency.
    Type: Grant
    Filed: October 30, 2008
    Date of Patent: April 5, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-il Song, Hae-joo Jeong, Jung-pil Yu