Abstract: According to one embodiment of the present disclosure, a semiconductor process system could be provided, the system comprising a substrate holder where a substrate is placed and an electrode is included, and a frequency generating device providing bias power to the electrode, wherein the frequency generating device provides the bias power of different patterns to the electrode in a first period for performing a main process on the substrate and a second period for performing an auxiliary process on the substrate, and wherein at least one of the first period or the second period is adjusted to be 30 microseconds or smaller.

Abstract: According to one embodiment of the present disclosure, there can be provided a plasma processing system for multi-station, the system including a processing chamber including at least two or more stations, one plasma generator provided for each of the stations, one inverter provided for each of the plasma generators, a sensing unit configured to measure an electric characteristic of each of the plasma generators, and a controller configured to acquire sensing data from the sensing unit and control each of the inverters.