Abstract: In certain examples, methods and semiconductor structures are directed to use of a doped buried region (e.g., Mg-dopant) including a III-Nitride material and having a diffusion path (“ion diffusion path”) that includes hydrogen introduced by using ion implantation via at least one ion species. An ion implantation thermal treatment causes hydrogen to diffuse through the ion implanted path and causes activation of the buried region. In more specific examples in which such semiconductor structures have an ohmic contact region at which a source of a transistor interfaces with the buried region, the ohmic contact region is without etching-based damage due at least in part to the post-ion implantation thermal treatment.

Abstract: A driver circuit for a three-dimensional (3D) memory device has a field management structure electrically coupled to a gate conductor. The field management structure causes an electric field peak in a vertical channel of the 3D memory device when a voltage differential exists between the source conductor and the drain conductor and the gate conductor is not biased. The electrical field peak can adjust the electrical response of the driver circuit, enabling the circuit to have a higher breakdown threshold voltage and improved drive current. Thus, the driver circuit can enable a scalable vertical string driver that is above the memory array instead of under the memory array circuitry.

Abstract: Embodiments of the present application provide Ensartinib or a salt thereof and a use of a composition containing Ensartinib or the salt thereof in treatment of a disease carrying MET 14 exon skipping mutation.

Abstract: A driver circuit for a three-dimensional (3D) memory device has a super junction structure as a field management structure. The super junction structure could be referred to as an extended junction structure, which distributes the electrical field of the junction between the vertical channel and the gate conductor for a string driver. The vertical channel includes a channel conductor to connect vertically between a source conductor and a drain conductor. The extended junction structure extends in parallel with the vertical channel conductor, extending vertically toward the drain conductor, having a height greater than a height of the gate conductor.

Abstract: Systems, methods, and apparatuses for automatically detecting the risk of dealer default are described. A machine learning model may be trained using a gradient boosting technique on a dataset that includes historical lien information, historical dealer information, and historical vehicle default information. Lien information and financing information for vehicles may be received and correlated. Furthermore, a machine learning model may generate aggregate risk scores for dealers. Furthermore, determination of an aggregate risk score that exceeds a threshold risk score may cause the generation of a notification.

Abstract: In product testing, a script prioritization tool (102) is used to intelligently prioritize the execution sequence of test scripts. This tool creates a repository of test outputs from the executions of test scripts and analyzes the outputs to train and deploy a machine learning, ML, model that defines the priority of the scripts that may need to be executed and the scripts whose execution may be skipped without affecting the quality of testing. Scripts that are more likely to fail and/or are time consuming to execute are prioritized, while other scripts may be skipped. The ML model ranks the scripts based on the average execution time of the script, a count of the execution failures of the script, a count of the number of execution retries for the script, and the most recent failure time of the script. The scripts can be executed based on their rankings for efficiency and time-saving.

Abstract: Systems, methods, and apparatuses for automatically detecting the risk of dealer default are described. A machine learning model may be trained using a gradient boosting technique on a dataset that includes historical lien information, historical dealer information, and historical vehicle default information. Lien information and financing information for vehicles may be received and correlated. Furthermore, a machine learning model may generate aggregate risk scores for dealers. Furthermore, determination of an aggregate risk score that exceeds a threshold risk score may cause the generation of a notification.

Abstract: Systems, methods, and apparatuses for automatically prioritizing unperfected liens are described. A machine learning model may be trained to detect a risk of dealer default. Lien information corresponding to liens for vehicles associated with dealers may be received. Prioritized lien information may be generated based on selection of the liens that satisfy criteria. Financing information for vehicles may be received and correlated with the prioritized lien information. Furthermore, the machine learning model may be used to generate risk scores associated with the liens. The liens may be prioritized based on the aggregate risk scores.

Abstract: In certain examples, methods and semiconductor structures are directed to use of a doped buried region (e.g., Mg-dopant) including a III-Nitride material and having a diffusion path (“ion diffusion path”) that includes hydrogen introduced by using ion implantation via at least one ion species. An ion implantation thermal treatment causes hydrogen to diffuse through the ion implanted path and causes activation of the buried region. In more specific examples in which such semiconductor structures have an ohmic contact region at which a source of a transistor interfaces with the buried region, the ohmic contact region is without etching-based damage due at least in part to the post-ion implantation thermal treatment.

Abstract: In product testing, a script prioritization tool (102) is used to intelligently prioritize the execution sequence of test scripts. This tool creates a repository of test outputs from the executions of test scripts and analyzes the outputs to train and deploy a machine learning, ML, model that defines the priority of the scripts that may need to be executed and the scripts whose execution may be skipped without affecting the quality of testing. Scripts that are more likely to fail and/or are time consuming to execute are prioritized, while other scripts may be skipped. The ML model ranks the scripts based on the average execution time of the script, a count of the execution failures of the script, a count of the number of execution retries for the script, and the most recent failure time of the script. The scripts can be executed based on their rankings for efficiency and time-saving.

Abstract: A system for testing electrical components comprising a supplier test system operating on a first processor and configured to generate test data for a component and to store the component test data on a block chain. A board level test system operating on a second processor and configured to generate test data for a board and to store the board test data on the block chain. A test tracking system configured to request a first key to access to the component test data and a second key to access the board test data and to store the first key and the second key.

Abstract: A system for testing electrical components comprising a supplier test system operating on a first processor and configured to generate test data for a component and to store the component test data on a block chain. A board level test system operating on a second processor and configured to generate test data for a board and to store the board test data on the block chain. A test tracking system configured to request a first key to access to the component test data and a second key to access the board test data and to store the first key and the second key.

Abstract: Provided are a flowrate measurement device and a flowrate measurement method. The flowrate measurement device includes an attachment portion configured to attach the flowrate measurement device to an object to be measured, and a measurement portion. The measurement portion includes a first ultrasonic transmitter, a second ultrasonic transmitter and a plurality of signal receivers between the first ultrasonic transmitter and the second ultrasonic transmitter. The plurality of signal receivers are spaced apart from each other. The first ultrasonic transmitter, the second ultrasonic transmitter and the plurality of the signal receivers are all disposed on the attachment portion, such that both the first ultrasonic transmitter and the second ultrasonic transmitter are capable of emitting an ultrasonic wave signal to the object to be measured. The signal receivers are capable of receiving an ultrasonic wave signal reflected from the object to be measured.

Abstract: A driver circuit for a three-dimensional (3D) memory device has a field management structure electrically coupled to a gate conductor. The field management structure causes an electric field peak in a vertical channel of the 3D memory device when a voltage differential exists between the source conductor and the drain conductor and the gate conductor is not biased. The electrical field peak can adjust the electrical response of the driver circuit, enabling the circuit to have a higher breakdown threshold voltage and improved drive current. Thus, the driver circuit can enable a scalable vertical string driver that is above the memory array instead of under the memory array circuitry.

Abstract: A driver circuit for a three-dimensional (3D) memory device has a super junction structure as a field management structure. The super junction structure could be referred to as an extended junction structure, which distributes the electrical field of the junction between the vertical channel and the gate conductor for a string driver. The vertical channel includes a channel conductor to connect vertically between a source conductor and a drain conductor. The extended junction structure extends in parallel with the vertical channel conductor, extending vertically toward the drain conductor, having a height greater than a height of the gate conductor.

Abstract: Provided are a flowrate measurement device and a flowrate measurement method. The flowrate measurement device includes an attachment portion configured to attach the flowrate measurement device to an object to be measured, and a measurement portion. The measurement portion includes a first ultrasonic transmitter, a second ultrasonic transmitter and a plurality of signal receivers between the first ultrasonic transmitter and the second ultrasonic transmitter. The plurality of signal receivers are spaced apart from each other. The first ultrasonic transmitter, the second ultrasonic transmitter and the plurality of the signal receivers are all disposed on the attachment portion, such that both the first ultrasonic transmitter and the second ultrasonic transmitter are capable of emitting an ultrasonic wave signal to the object to be measured. The signal receivers are capable of receiving an ultrasonic wave signal reflected from the object to be measured.

Abstract: III-nitride vertical transistors and methods of making the same are disclosed. The transistors can include aperture regions that are formed using ion implantation. The resulting transistors can have improved properties.

Abstract: A preparation method of vegetable oil polyol, which is obtains by carrying out allylic oxidation treatment of vegetable oil, increasing the content of hydroxyl group in the product and then one step reaction between epoxidation and ring-opening. At the same time, the present invention also discloses novel vegetable oil polyol made by the preparation method and the application of the vegetable oil polyol in preparation of polyurethane foam material. Compared with the prior art, the method has the advantages of simple operation, low energy consumption and low side reaction occurrence rate.

Abstract: A preparation method of vegetable oil polyol, which is obtains by carrying out allylic oxidation treatment of vegetable oil, increasing the content of hydroxyl group in the product and then one step reaction between epoxidation and ring-opening. At the same time, the present invention also discloses novel vegetable oil polyol made by the preparation method and the application of the vegetable oil polyol in preparation of polyurethane foam material. Compared with the prior art, the method has the advantages of simple operation, low energy consumption and low side reaction occurrence rate.