Abstract: A composition for an organic optoelectronic device an organic optoelectronic device, and a display device, the composition including a first compound; a second compound; and a third compound, wherein the first compound, the second compound, and the third compound are different from each other, the first compound is represented by Chemical Formula I, the second compound is represented by Chemical Formula I, and the third compound is represented by Chemical Formula II or Chemical Formula III:

Abstract: Provided are a binder composition for a secondary battery electrode, and an electrode mixture including the same, and more particularly, a binder composition for a secondary battery electrode capable of providing excellent binding strength for an active material and an electrode while having excellent latex stability, thereby improving performance of a secondary battery, and an electrode mixture including the same.

Abstract: Disclosed herein are an apparatus and method for a multi-cloud service platform. The apparatus includes one or more processors and executable memory for storing at least one program executed by the one or more processors. The at least one program may receive a service request from a user client device, generate a multi-cloud infrastructure service using multiple clouds in response to the service request, make the multiple clouds interoperate with mufti-cloud infrastructure in order to provide the multi-cloud infrastructure service, and generate a multi-cloud application runtime environment corresponding to the multi-cloud infrastructure service.

Abstract: A compound for an organic optoelectronic device, a composition for an organic optoelectronic device including the same, an organic optoelectronic device, and a display device, the compound is represented by Chemical Formula 1:

Abstract: Provided is a semiconductor device having a backside illuminated image sensor and a method of forming same. The method includes providing a first substrate and a second substrate, forming metal interconnections on a first surface of the first substrate, forming a filling insulating layer filling spaces between sides of the metal interconnections and covering upper surfaces of the metal interconnections, forming a buffer insulating layer softer than the filling insulating layer on the filling insulating layer, forming a capping insulating layer denser than the buffer insulating layer on the buffer insulating layer, and bonding a surface of the capping insulating layer to a surface of the second substrate.

Abstract: Provided is a semiconductor device having a backside illuminated image sensor and a method of forming same. The method includes providing a first substrate and a second substrate, forming metal interconnections on a first surface of the first substrate, forming a filling insulating layer filling spaces between sides of the metal interconnections and covering upper surfaces of the metal interconnections, forming a buffer insulating layer softer than the filling insulating layer on the filling insulating layer, forming a capping insulating layer denser than the buffer insulating layer on the buffer insulating layer, and bonding a surface of the capping insulating layer to a surface of the second substrate.

Abstract: Provided is a semiconductor device having a backside illuminated image sensor and a method of forming same. The method includes providing a first substrate and a second substrate, forming metal interconnections on a first surface of the first substrate, forming a filling insulating layer filling spaces between sides of the metal interconnections and covering upper surfaces of the metal interconnections, forming a buffer insulating layer softer than the filling insulating layer on the filling insulating layer, forming a capping insulating layer denser than the buffer insulating layer on the buffer insulating layer, and bonding a surface of the capping insulating layer to a surface of the second substrate.

Abstract: An interconnection structure having an oxygen trap pattern in a semiconductor device, and a method of fabricating the same are provided. The interconnection structure includes a lower interlayer insulating layer formed on a semiconductor substrate. A metal layer pattern and a capping layer pattern are sequentially stacked on the lower interlayer insulating layer. An oxygen trap pattern is disposed on the capping layer pattern and includes a conductive oxygen trap pattern.

Abstract: An interconnection structure having an oxygen trap pattern in a semiconductor device, and a method of fabricating the same are provided. The interconnection structure includes a lower interlayer insulating layer formed on a semiconductor substrate. A metal layer pattern and a capping layer pattern are sequentially stacked on the lower interlayer insulating layer. An oxygen trap pattern is disposed on the capping layer pattern and includes a conductive oxygen trap pattern.

Abstract: A semiconductor device includes a gate structure formed on a substrate. The gate structure includes an uppermost first metal silicide layer pattern having a first thickness. Spacers are formed on sidewalls of the gate structure. One or more impurity regions are formed in the substrate adjacent to at least one sidewall of the gate structure. A second metal silicide layer pattern, having a second thickness thinner than the first thickness, is formed on the one or more impurity regions.

Abstract: A semiconductor device includes a gate structure formed on a substrate. The gate structure includes an uppermost first metal silicide layer pattern having a first thickness. Spacers are formed on sidewalls of the gate structure. One or more impurity regions are formed in the substrate adjacent to at least one sidewall of the gate structure. A second metal silicide layer pattern, having a second thickness thinner than the first thickness, is formed on the one or more impurity regions.

Abstract: Disclosed is a method for forming a multi-layered structure having at least two films on a semiconductor substrate. The substrate is disposed on a thermally conductible stage for supporting the substrate. After the distance between the stage and the substrate is adjusted to a first interval so that the substrate has a first temperature by heat transferred from the stage, a first thin film is formed on the substrate at the first temperature. The distance is then adjusted from the first interval to a second interval so that the substrate reaches a second temperature, and then a second thin film is formed on the first thin film at the second temperature, thereby forming the multi-layered structure on the substrate. The multi-layered structure can be employed for a gate insulation film or the dielectric film of a capacitor.

Abstract: Disclosed is a method for forming a multi-layered structure having at least two films on a semiconductor substrate. The substrate is disposed on a thermally conductible stage for supporting the substrate. After the distance between the stage and the substrate is adjusted to a first interval so that the substrate has a first temperature by heat transferred from the stage, a first thin film is formed on the substrate at the first temperature. The distance is then adjusted from the first interval to a second interval so that the substrate reaches a second temperature, and then a second thin film is formed on the first thin film at the second temperature, thereby forming the multi-layered structure on the substrate. The multi-layered structure can be employed for a gate insulation film or the dielectric film of a capacitor.