Patents by Inventor Dong Jo

Dong Jo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150056527
    Abstract: A hydrogen purging device for a fuel cell system includes a humidifier that humidifies dry air supplied from an air blower, using moist air discharged from a cathode of a stack and supplies the humidified air to the cathode. A water trap and a hydrogen recirculation blower are sequentially connected to an outlet of an anode, wherein a hydrogen outlet of the water trap and an inlet of the humidifier are connected by a cathode-hydrogen purging line for purging hydrogen to the cathode so that the hydrogen discharged from the anode of the fuel stack is purged to the cathode during idling or during normal driving.
    Type: Application
    Filed: December 10, 2013
    Publication date: February 26, 2015
    Applicant: Hyundai Motor Company
    Inventors: Young Min KIM, Jong Hyun LEE, Dong Jo OH
  • Patent number: 8958756
    Abstract: A cognitive radio (CR) communication apparatus and method is provided. A cognitive radio (CR) communication apparatus includes a signal receiving unit which receives signals from a primary user of a primary system and a secondary transmitter of a secondary system, the received signals including an element associated with at least one known signal of the secondary transmitter, and a determination unit which determines whether a signal of the primary user exists from among the received signals based on the element associated with the at least one known signal.
    Type: Grant
    Filed: May 10, 2013
    Date of Patent: February 17, 2015
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Hyun Ho Choi, Yong Ho Cho, Jung Hyun Park, Dong Jo Park
  • Publication number: 20150021602
    Abstract: A thin film transistor array panel and a manufacturing method capable of forming an insulating layer made of different materials for a portion contacting an oxide semiconductor and a second portion without an additional process. Source and drain electrodes of the thin film transistor each include a lower layer and an upper layer. A first passivation layer contacts the lower layer of the source and drain electrodes but does not contact the upper layer of the source and drain electrodes, and a second passivation layer is disposed on the upper layer of the source and drain electrodes. The first passivation layer may be made of silicon oxide, and the second passivation may be made of silicon nitride.
    Type: Application
    Filed: October 7, 2014
    Publication date: January 22, 2015
    Inventors: Su-Hyoung KANG, Yoon Ho KHANG, Dong Jo KIM, Hyun Jae NA
  • Publication number: 20140377673
    Abstract: A fuel cell including a stack in which a plurality of cells are stacked includes an air manifold and a hydrogen manifold on a first side and a second side of the stack, respectively, a jet array including a tubular body inserted in the air manifold or the hydrogen manifold and a plurality of orifices formed in the tubular body and arranged in a longitudinal direction of the tubular body, a pump or a valve for supplying air or hydrogen to the jet array; and a controller that operates the pump or the valve.
    Type: Application
    Filed: October 28, 2013
    Publication date: December 25, 2014
    Applicant: Hyundai Motor Company
    Inventors: Yong Gyu Noh, Dong Jo Oh, Bu Kil Kwon
  • Publication number: 20140370410
    Abstract: A fuel cell using a synthetic jet array has a structure in which a plurality of cells are superposed in series and share a manifold for inflow and outflow of air, hydrogen, and coolant. The fuel cell includes an air inflow manifold formed passing through the plurality of cells, a synthetic jet array made up of a plurality of jet generators that are disposed on the air inflow manifold at regular intervals and generate a synthetic jet toward a cathode, and a controller configured to selectively operate the jet generators of the synthetic jet array.
    Type: Application
    Filed: October 4, 2013
    Publication date: December 18, 2014
    Applicant: HYUNDAI MOTOR COMPANY
    Inventors: Yong Gyu NOH, Dong Jo OH
  • Publication number: 20140353790
    Abstract: Provided is a semiconductor device having a backside illuminated image sensor and a method of forming same. The method includes providing a first substrate and a second substrate, forming metal interconnections on a first surface of the first substrate, forming a filling insulating layer filling spaces between sides of the metal interconnections and covering upper surfaces of the metal interconnections, forming a buffer insulating layer softer than the filling insulating layer on the filling insulating layer, forming a capping insulating layer denser than the buffer insulating layer on the buffer insulating layer, and bonding a surface of the capping insulating layer to a surface of the second substrate.
    Type: Application
    Filed: August 20, 2014
    Publication date: December 4, 2014
    Inventors: Dae-Keun Park, Dong-Jo Kang, Hyoung-Jun Kim, Jin-Sung Chung
  • Publication number: 20140350203
    Abstract: Disclosed is a method for producing a nitrile rubber comprising adding 0.1 to 5 parts by weight of at least one phosphate emulsifier selected from the group consisting of monoalkyl ether phosphate (MAP) represented by the following Formula 1 and dialkyl ether phosphate (DAP) represented by the following Formula 2, with respect to 100 parts by weight of monomers constituting the nitrile rubber. The method minimizes mold contamination during molding of produced nitrile rubber, eliminates the necessity of any process of removing mold contaminants, improves production efficiency and thus reduces defect rates of final molded articles.
    Type: Application
    Filed: August 3, 2012
    Publication date: November 27, 2014
    Applicant: LG CHEM, LTD.
    Inventors: Dong Jo Ryu, Se Eun Lee, Sin Gun Kang, Seon Hee Han, Jeong Heon Ahn, Jeong Hoon Jo, Hee JUng Jeon
  • Patent number: 8892150
    Abstract: Provided is a communication method of a neighboring terminal and a target terminal in which a cooperative terminal that has a better SINR or a better channel condition provides help to a target terminal through cooperation between terminals based on a random access mode or a scheduling mode, so that an SINR of the target terminal is improved without help from a base station.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: November 18, 2014
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Won Jong Noh, Hyun Ho Choi, Won Jae Shin, Sang Uk Park, Dong Jo Park, Chang Yong Shin, Joon Tae Kim, Seung Won Choi, Jung Min Moon, Dong Ho Cho
  • Patent number: 8884291
    Abstract: A thin film transistor array panel and a manufacturing method capable of forming an insulating layer made of different materials for a portion contacting an oxide semiconductor and a second portion without an additional process. The thin film transistor array panel includes: a gate electrode; a source electrode and a drain electrode spaced apart from each other, each of the source and drain electrodes comprising a lower layer and an upper layer; an insulating layer disposed between the gate electrode and the source and drain electrodes; a semiconductor, the source electrode and the drain electrode being electrically connected to the semiconductor; a first passivation layer contacting the lower layer of the source and drain electrodes but not contacting the upper layer of the source and drain electrodes; and a second passivation layer disposed on the upper layer of the source and drain electrodes.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: November 11, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Su-Hyoung Kang, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na
  • Patent number: 8865508
    Abstract: Provided is a semiconductor device having a backside illuminated image sensor and a method of forming same. The method includes providing a first substrate and a second substrate, forming metal interconnections on a first surface of the first substrate, forming a filling insulating layer filling spaces between sides of the metal interconnections and covering upper surfaces of the metal interconnections, forming a buffer insulating layer softer than the filling insulating layer on the filling insulating layer, forming a capping insulating layer denser than the buffer insulating layer on the buffer insulating layer, and bonding a surface of the capping insulating layer to a surface of the second substrate.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: October 21, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae-Keun Park, Dong-Jo Kang, Hyoung-Jun Kim, Jin-Sung Chung
  • Publication number: 20140300106
    Abstract: The present invention relates to a pipe joint structure for a semiconductor processing, comprising: a first pipe joint; a second pipe joint; a gasket inserted into adjacent surfaces of the first pipe joint and the second pipe joint; and a screw for bringing the adjacent surfaces of the first pipe joint and the second pipe joint into close contact with the gasket, wherein the first pipe joint has an annular indented groove formed in the center of the adjacent surface thereof, the second pipe joint has a protrusion portion formed on the adjacent surface thereof so as to correspond to the indented groove, and the gasket has a second protrusion portion and a second indented groove which are respectively formed on both side surfaces thereof so as to correspond to the indented groove and the protrusion portion.
    Type: Application
    Filed: June 6, 2014
    Publication date: October 9, 2014
    Inventors: Dong-jo Kim, Jae-hwang Jang, Jong-bae Park
  • Patent number: 8853704
    Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: October 7, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang
  • Publication number: 20140287334
    Abstract: A fuel cell system includes an air manifold through which air is supplied or exhausted, a fuel gas manifold through which fuel gas is supplied or exhausted, a stack portion that generates electricity by using air and fuel that are supplied by the air manifold and the fuel gas manifold, and an injection array that is disposed along an inside of the air manifold or the fuel gas manifold to inject air or fuel gas.
    Type: Application
    Filed: December 30, 2013
    Publication date: September 25, 2014
    Applicant: HYUNDAI MOTOR COMPANY
    Inventors: Yong Gyu Noh, Dong Jo Oh, Bu Kil Kwon
  • Publication number: 20140239295
    Abstract: Provided are a zinc oxide-based sputtering target, a method of preparing the same, and a thin film transistor including a barrier layer deposited by the zinc oxide-based sputtering target. The zinc oxide-based sputtering target includes a sintered body that is composed of zinc oxide in which indium oxide is doped in a range from about 1% w/w to about 50% w/w. A backing plate is coupled to a back of the sintered body. The backing plate supports the sintered body.
    Type: Application
    Filed: February 26, 2014
    Publication date: August 28, 2014
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jae-Woo PARK, Dong-Jo Kim, Ju-Ok Park, In-Sung Sohn, Sang-Won Yoon, Gun-Hyo Lee, Yong-Jin Lee, Yoon-Gyu Lee, Do-Hyun Kim, Woo-Seok Jeon
  • Publication number: 20140175429
    Abstract: A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line.
    Type: Application
    Filed: November 4, 2013
    Publication date: June 26, 2014
    Applicant: Samsung Display Co., Ltd.
    Inventors: DONG JO KIM, Ji Seon Lee, Jong Chan Lee, Yoon Ho Khang, Sang Ho Park, Yong Su Lee, Jung Kyu Lee
  • Publication number: 20140176489
    Abstract: A touch sensing apparatus and method for correctly sensing a touch signal by removing an offset per touch node via differential sensing are discussed. The touch sensing method includes sensing a first sensing value including an offset component per touch node using a read out signal of a touch sensor, the touch sensor not being supplied with a driving pulse, in a first sensing period; sensing a second sensing value including the offset component of the touch node and a mutual capacitive component based on whether a touch is performed, using a read out signal of the touch sensor, the touch sensor being supplied with a driving pulse, in a second sensing period; and acquiring touch data from which the offset component is removed via a differential operation of the second sensing value and the first sensing value.
    Type: Application
    Filed: November 21, 2013
    Publication date: June 26, 2014
    Applicant: LG DISPLAY CO., LTD.
    Inventor: Dong-Jo PARK
  • Patent number: 8758937
    Abstract: Disclosed is a binder, which comprises polymer particles obtained by polymerization of: (a) 1˜80 parts by weight of a (meth)acrylic acid ester monomer; (b) 1˜20 parts by weight of an unsaturated carboxylic acid monomer; and (c) 0.001˜40 parts by weight of a vinyl monomer, based on 100 parts by weight of the binder polymer, and which allows electrode active material particles capable of lithium intercalation/deintercalation to be fixed and linked among themselves, and between the particles and a collector. An electrode comprising the binder, and a lithium secondary battery having the electrode are also disclosed. Further, a method for evaluating interrelation between wettability of a binder to an electrolyte and quality of a battery comprising the binder is disclosed.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: June 24, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Dong Jo Ryu, Cha Hun Ku, Chang Sun Han, Byoung Yun Kim, Ju Hyun Kim, Chang Wan Koo
  • Publication number: 20140167040
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Application
    Filed: February 19, 2014
    Publication date: June 19, 2014
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Publication number: 20140151683
    Abstract: A thin film transistor includes an oxide semiconductor, in which an oxygen defect content of the oxide semiconductor is no greater than about 0.15 based on an entire oxygen content included in the oxide semiconductor.
    Type: Application
    Filed: April 30, 2013
    Publication date: June 5, 2014
    Applicant: Samsung Display Co., Ltd.
    Inventors: Sang Ho Park, Su-Hyoung Kang, Yoon Ho Khang, Dong Jo Kim, Joon Yong Park, Sang Won Shin, Dong Hwan Shim
  • Publication number: 20140145177
    Abstract: A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.
    Type: Application
    Filed: March 14, 2013
    Publication date: May 29, 2014
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Ji-Seon LEE, Dong-Jo KIM, Yoon-Ho KHANG, Yong-Su LEE, Jong-Chan LEE