Abstract: A service identifying and processing method using a wireless terminal message according to an exemplary embodiment of the present invention includes (a) receiving a wireless terminal message by a first entity which is a mobile device; and (b) expressing, by a first agent which is an information processing application program installed on the first entity, entity information of second entity based on the wireless terminal message and service confirmation information related to service provided by the second entity, through an application screen by the first agent.

Abstract: Provided are an electric appliance and a method of manufacturing the same, the electric appliance having a smaller size and a reduced overall weight by preventing a fluid from flowing into a space unrelated to a heating component in a state where the fluid fills its case. The electric appliance includes: a case including a first space and a second space communicated to each other; a first component disposed in the first space; a second component disposed in the second space; a connection portion electrically connecting the first component and the second component to each other; and a potting pattern including a resin material and formed in the first space.

Abstract: A functional safety system of a robot according to an exemplary embodiment of the present disclosure can duplicate modules so as to satisfy a performance level d (pl-d) required for the functional satisfy of a robot.

Abstract: A functional safety system of a robot according to an exemplary embodiment of the present disclosure can duplicate modules so as to satisfy a performance level d (pl-d) required for the functional satisfy of a robot.

Abstract: A functional safety system of a robot according to an exemplary embodiment of the present disclosure can generate a safety zone which is a zone to sense whether an obstacle is present.

Abstract: A laser driver for driving a Vertical Cavity Surface Emitting Laser (VCSEL) includes a high-side switch (High-side Field Effect Transistor) having an internal capacitor for charging with a drain terminal thereof connected to a high-voltage terminal, a low-side switch (Low-side Field Effect Transistor) in which a drain terminal thereof is connected to a source terminal of the high-side switch and a source terminal thereof is connected to a ground terminal, and a VCSEL diode having an anode terminal connected to the high-side switch.

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

Abstract: A semiconductor package includes a first substrate that includes a first trench on a recessed portion of a bottom surface of the first substrate and a first through hole extending through the first substrate to the first trench, a first semiconductor chip on the first substrate, a first capacitor chip in the first trench and on the first substrate, and a first molding layer on the first substrate and covering the first semiconductor chip. The first molding layer includes a first part that extends parallel to a top surface of the first substrate, a second part connected to the first part and extending vertically in the first through hole, and a third part connected to the second part and surrounding the first capacitor chip. A bottom surface of the third part is coplanar with the bottom surface of the first substrate.

Abstract: A semiconductor package includes a first substrate that includes a first trench on a recessed portion of a bottom surface of the first substrate and a first through hole extending through the first substrate to the first trench, a first semiconductor chip on the first substrate, a first capacitor chip in the first trench and on the first substrate, and a first molding layer on the first substrate and covering the first semiconductor chip. The first molding layer includes a first part that extends parallel to a top surface of the first substrate, a second part connected to the first part and extending vertically in the first through hole, and a third part connected to the second part and surrounding the first capacitor chip. A bottom surface of the third part is coplanar with the bottom surface of the first substrate.

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.