Abstract: A method of making a signal charge transfer device, including the steps of: forming first conductivity-type channel regions (30) in each of second conductivity-type wells (20) formed in a first conductivity-type semiconductor substrate (10); forming a plurality of first electrodes (50a) uniformly spaced from one another, and then forming an insulation film (40) for insulating the first electrodes from one another; forming a primary potential barrier (70) in each of the channel regions by subjecting the channel regions to a primary-ion implantation process using the plurality of first electrodes as a mask; forming a secondary potential barrier (70a) in each of the channel regions at lower corners of each of the first electrodes by subjecting the channel regions to a sloped secondary-ion implantation process using the plurality of first electrodes as a mask; and forming second electrodes (80a), each being disposed between the adjacent ones of the first electrodes, and then forming an insulation film (60) to ins

Abstract: A method of making a charge coupled device image sensor comprising forming n.sup.+ type impurity regions for light receiving element and charge transfer element over a p type well of a n type substrate, forming an oxide film for insulating a gate over the substrate, forming a nitride film over the oxide film, the nitride film serving as an etch stopper, forming an insulating film such as a LTO film or BPSG film, forming a p.sup.+ type third impurity region in the p type well, forming an electrode over the third impurity region, and forming a PECVD LTO film. The PECVD LTO film and insulating film are removed by a wet etching method or a CDE method, so as to expose partially the nitride film. The wet etching is carried out under the condition that the nitride film is used as an etch stopper, thereby capable of solving the problem of a damage of substrate caused by a dry etching and thus avoiding generations of dark current and white defect.

Abstract: A process for producing a CCD image sensor comprising the steps of: providing a light-receiving photo-diode region and a VCCD transmission region by injecting ions into a substrate at a predetermined distance, the injected ions being different in type from the substrate, covering the surface of the substrate with a gate oxide layer and a gate polysilicon layer, the gate polysilicon layer being deposited over the gate oxide layer, then removing the gate polysilicon layer only from the region over the light-receiving region, depositing a refractory metal layer over the whole etched surface by vacuum evaporation and then annealing the refractory metal into a silicide in the region thereof which is in contact with the gate polysilicon and removing the refractory metal from the unconverted portion of the refractory metal layer which overlies the gate oxide layer.