Abstract: A semiconductor system includes a first semiconductor device and a second semiconductor device. The first semiconductor device outputs a test mode enable signal and a switch control signal and receives test data. The second semiconductor device generates first internal data and second internal data in response to the test mode enable signal, drives a first pad in response to the first internal data, drives a second pad in response to the second internal data, and drives a third pad in response to the first and second internal data according to the switch control signal.

Abstract: A semiconductor system includes a first semiconductor device and a second semiconductor device. The first semiconductor device outputs a test mode enable signal and a switch control signal and receives test data. The second semiconductor device generates first internal data and second internal data in response to the test mode enable signal, drives a first pad in response to the first internal data, drives a second pad in response to the second internal data, and drives a third pad in response to the first and second internal data according to the switch control signal.

Abstract: A reference voltage generating circuit in a semiconductor memory apparatus comprises a driving control signal generating unit configured to generate a driving control signal according to a temperature variation, wherein the driving control signal generating unit is enabled in response to a power-up signal, a driving unit configured to control a voltage level, which is applied to a voltage transfer node, in response to the power-up signal and the driving control signal, and a reference voltage generating unit configured to generate a reference voltage when a voltage level on the voltage transfer node is higher than a predetermined voltage level.

Abstract: A voltage down converter includes a voltage comparator for comparing a first reference voltage and an internal voltage to provide a first driving signal; a driving signal controller coupled with the voltage comparator, the driving signal controller configured to generate a second driving signal in response to an external voltage and selectively providing any one of the first and second driving signals; and a voltage supply coupled with the driving signal controller, the voltage supply configured to receive the selectively provided first and second driving signals, wherein the voltage supply is activated in accordance with the first or second driving signal, thereby providing the internal voltage.

Abstract: A reference voltage generating circuit in a semiconductor memory apparatus comprises a driving control signal generating unit configured to generate a driving control signal according to a temperature variation, wherein the driving control signal generating unit is enabled in response to a power-up signal, a driving unit configured to control a voltage level, which is applied to a voltage transfer node, in response to the power-up signal and the driving control signal, and a reference voltage generating unit configured to generate a reference voltage when a voltage level on the voltage transfer node is higher than a predetermined voltage level.

Abstract: A reference voltage generating circuit in a semiconductor memory apparatus comprises a driving control signal generating unit configured to generate a driving control signal according to a temperature variation, wherein the driving control signal generating unit is enabled in response to a power-up signal, a driving unit configured to control a voltage level, which is applied to a voltage transfer node, in response to the power-up signal and the driving control signal, and a reference voltage generating unit configured to generate a reference voltage when a voltage level on the voltage transfer node is higher than a predetermined voltage level.

Abstract: A voltage down converter includes a voltage comparator for comparing a first reference voltage and an internal voltage to provide a first driving signal; a driving signal controller coupled with the voltage comparator, the driving signal controller configured to generate a second driving signal in response to an external voltage and selectively providing any one of the first and second driving signals; and a voltage supply coupled with the driving signal controller, the voltage supply configured to receive the selectively provided first and second driving signals, wherein the voltage supply is activated in accordance with the first or second driving signal, thereby providing the internal voltage.

Abstract: A voltage down converter includes a voltage comparator for comparing a first reference voltage and an internal voltage to provide a first driving signal; a driving signal controller coupled with the voltage comparator, the driving signal controller configured to generate a second driving signal in response to an external voltage and selectively providing any one of the first and second driving signals; and a voltage supply coupled with the driving signal controller, the voltage supply configured to receive the selectively provided first and second driving signals, wherein the voltage supply is activated in accordance with the first or second driving signal, thereby providing the internal voltage.

Abstract: A bulk voltage (VBB) level sensor for a semiconductor memory apparatus is disclosed. The VBB level detector includes a reference voltage generator for generating a first reference voltage of which level varies with temperature, a reference voltage comparator for receiving a second reference voltage and the first reference voltage to generate a third reference voltage, a bias generator for receiving the third reference voltage to generate a specific bias level, and a VBB sensor for receiving the bias level to detect VBB level.

Abstract: An internal voltage generator includes an internal voltage detecting unit that receives an active signal activated in an active operation mode of a semiconductor memory and a bias voltage varying according to temperature variation, detects a level of an internal voltage by using a reference voltage and outputs an internal voltage pumping signal activated according to the level of the internal voltage.

Abstract: A voltage pumping device for generating a high voltage that is a boosted voltage is disclosed. The voltage pumping device includes an oscillator for generating a first pulse signal or second pulse signal in response to a control signal, and a high voltage pump for pumping a high voltage of a constant level in response to the first pulse signal or second pulse signal.

Abstract: An internal voltage generator includes an internal voltage detecting unit that receives an active signal activated in an active operation mode of a semiconductor memory and a bias voltage varying according to temperature variation, detects a level of an internal voltage by using a reference voltage and outputs an internal voltage pumping signal activated according to the level of the internal voltage.

Abstract: An apparatus for controlling a voltage includes a reference voltage generator that generates reference voltage, and a bulk bias voltage generator that generates a bulk bias voltage using the reference voltage supplied by the reference voltage generator, and supplies the bulk bias voltage to the reference voltage generator to control the reference voltage.

Abstract: A reference voltage generating circuit in a semiconductor memory apparatus comprises a driving control signal generating unit configured to generate a driving control signal according to a temperature variation, wherein the driving control signal generating unit is enabled in response to a power-up signal, a driving unit configured to control a voltage level, which is applied to a voltage transfer node, in response to the power-up signal and the driving control signal, and a reference voltage generating unit configured to generate a reference voltage when a voltage level on the voltage transfer node is higher than a predetermined voltage level.

Abstract: A voltage down converter includes a voltage comparator for comparing a first reference voltage and an internal voltage to provide a first driving signal; a driving signal controller coupled with the voltage comparator, the driving signal controller configured to generate a second driving signal in response to an external voltage and selectively providing any one of the first and second driving signals; and a voltage supply coupled with the driving signal controller, the voltage supply configured to receive the selectively provided first and second driving signals, wherein the voltage supply is activated in accordance with the first or second driving signal, thereby providing the internal voltage.

Abstract: A voltage pumping device for generating a high voltage that is a boosted voltage is disclosed. The voltage pumping device includes an oscillator for generating a first pulse signal or second pulse signal in response to a control signal, and a high voltage pump for pumping a high voltage of a constant level in response to the first pulse signal or second pulse signal.

Abstract: An apparatus for controlling a voltage includes a reference voltage generator that generates reference voltage, and a bulk bias voltage generator that generates a bulk bias voltage using the reference voltage supplied by the reference voltage generator, and supplies the bulk bias voltage to the reference voltage generator to control the reference voltage.

Abstract: A bulk voltage (VBB) level sensor for a semiconductor memory apparatus is disclosed. The VBB level detector includes a reference voltage generator for generating a first reference voltage of which level varies with temperature, a reference voltage comparator for receiving a second reference voltage and the first reference voltage to generate a third reference voltage, a bias generator for receiving the third reference voltage to generate a specific bias level, and a VBB sensor for receiving the bias level to detect VBB level.

Abstract: An apparatus for generating an internal voltage includes a comparing unit for comparing voltage levels between a reference voltage and a comparison voltage, a current supplying unit for outputting a current to an output terminal in response to an output signal of the comparing unit, and a voltage dividing unit for outputting the comparison voltage by dividing a voltage of the output terminal in a selected dividing ratio from a plurality of dividing ratios in response to a selection signal.

Abstract: A circuit for generating internal power voltage comprising: a comparison unit for comparing reference voltage and internal voltage; a buffer unit, its input terminal comprising CMOS inverters, for buffering an output signal of the comparison unit; a buffer control unit for controlling current flowing through the CMOS inverters of the buffer unit less than a predetermined amount in regular operations and for controlling current flowing through the CMOS inverters of the buffer unit more than a predetermined amount in active operation; a first current supply unit for supplying current according to an output signal of the buffer unit; and a load unit for generating internal voltage by current supply from the first current supply unit.