Patents by Inventor Dong Ki SHIM

Dong Ki SHIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming and packaging semiconductor die
    Patent number: 10910270
    Abstract: A manufacturing and packaging method for a semiconductor die is provided. The method prepares a wafer which has a seal-ring region, forms a first interlayer insulating film on the wafer, forms a metal wiring in the first interlayer insulating film, forms a second interlayer insulating film on the first interlayer insulating film, forms metal pads on the second interlayer insulating film, forms a passivation layer on the metal pads, removes a portion of the passivation layer in a region adjacent to the seal-ring region to expose the second interlayer insulating film, etches a portion of the second interlayer insulating film, forms a bump on the metal pads, removes the first interlayer insulating film and the second interlayer insulating film in the region adjacent to the seal-ring region by a laser grooving process, and dices the wafer into a first semiconductor die and a second semiconductor die.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: February 2, 2021
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Jae Sik Choi, Jin Won Jeong, Byeung Soo Song, Dong Ki Shim, Jin Han Bae
  • METHOD OF FORMING AND PACKAGING SEMICONDUCTOR DIE
    Publication number: 20200312715
    Abstract: A manufacturing and packaging method for a semiconductor die is provided. The method prepares a wafer which has a seal-ring region, forms a first interlayer insulating film on the wafer, forms a metal wiring in the first interlayer insulating film, forms a second interlayer insulating film on the first interlayer insulating film, forms metal pads on the second interlayer insulating film, forms a passivation layer on the metal pads, removes a portion of the passivation layer in a region adjacent to the seal-ring region to expose the second interlayer insulating film, etches a portion of the second interlayer insulating film, forms a bump on the metal pads, removes the first interlayer insulating film and the second interlayer insulating film in the region adjacent to the seal-ring region by a laser grooving process, and dices the wafer into a first semiconductor die and a second semiconductor die.
    Type: Application
    Filed: July 30, 2019
    Publication date: October 1, 2020
    Applicant: MagnaChip Semiconductor, Ltd.
    Inventors: Jae Sik CHOI, Jin Won JEONG, Byeung Soo SONG, Dong Ki SHIM, Jin Han BAE