Patents by Inventor Dong Kun Lee
Dong Kun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8354289Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.Type: GrantFiled: February 1, 2011Date of Patent: January 15, 2013Assignee: LG Siltron Inc.Inventors: Yong-Jin Kim, Dong-Kun Lee, Doo-Soo Kim, Ho-Jun Lee, Kye-Jin Lee
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Patent number: 8198649Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.Type: GrantFiled: November 2, 2007Date of Patent: June 12, 2012Assignee: Siltron, Inc.Inventors: Yong-Jin Kim, Doo-Soo Kim, Ho-Jun Lee, Dong-Kun Lee
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Patent number: 8158496Abstract: Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.Type: GrantFiled: September 9, 2010Date of Patent: April 17, 2012Assignee: Siltron Inc.Inventors: Ho-Jun Lee, Yong-Jin Kim, Dong-Kun Lee, Doo-Soo Kim, Ji-Hoon Kim
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Patent number: 8158501Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.Type: GrantFiled: December 14, 2010Date of Patent: April 17, 2012Assignee: Siltron, Inc.Inventors: Yong-Jin Kim, Doo-Soo Kim, Ho-Jun Lee, Dong-Kun Lee
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Patent number: 8138003Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.Type: GrantFiled: February 21, 2011Date of Patent: March 20, 2012Assignee: Siltron, Inc.Inventors: Doo-Soo Kim, Ho-Jun Lee, Yong-Jin Kim, Dong-Kun Lee
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Patent number: 8124497Abstract: A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.Type: GrantFiled: November 29, 2010Date of Patent: February 28, 2012Assignee: Siltron, Inc.Inventors: Yong-Jin Kim, Dong-Kun Lee, Doo-Soo Kim, Ho-Jun Lee, Kye-Jin Lee
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Publication number: 20120003824Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.Type: ApplicationFiled: February 1, 2011Publication date: January 5, 2012Inventors: Yong-Jin Kim, Dong-Kun Lee, Doo-Soo Kim, Ho-Jun Lee, Kye-Jin Lee
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Publication number: 20110315996Abstract: Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.Type: ApplicationFiled: July 29, 2009Publication date: December 29, 2011Inventors: Yong Jin Kim, Dong Kun Lee, Doo Soo Kim
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Publication number: 20110272703Abstract: Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles.Type: ApplicationFiled: December 9, 2009Publication date: November 10, 2011Inventors: Ho-Jun Lee, Dong-Kun Lee, Yong-Jin Kim, Doo-Soo Kim
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Publication number: 20110143525Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.Type: ApplicationFiled: February 21, 2011Publication date: June 16, 2011Applicant: SILTRON INC.Inventors: Doo-Soo Kim, Ho-Jun Lee, Yong-Jin Kim, Dong-Kun Lee
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Publication number: 20110129953Abstract: A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.Type: ApplicationFiled: November 29, 2010Publication date: June 2, 2011Inventors: Yong-Jin Kim, Dong-Kun Lee, Doo-Soo Kim, Ho-Jun Lee, Kye-Jin Lee
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Publication number: 20110092055Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.Type: ApplicationFiled: December 14, 2010Publication date: April 21, 2011Applicant: SILTRON, INC.Inventors: Yong-Jin Kim, Doo-Soo Kim, Ho-Jun Lee, Dong-Kun Lee
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Patent number: 7915698Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses on the base substrate that become larger from a central portion of the base substrate towards a peripheral portion when growing a nitride semiconductor film. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.Type: GrantFiled: December 14, 2007Date of Patent: March 29, 2011Assignee: Siltron, Inc.Inventors: Doo-Soo Kim, Ho-Jun Lee, Yong-Jin Kim, Dong-Kun Lee
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Publication number: 20100330784Abstract: Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.Type: ApplicationFiled: September 9, 2010Publication date: December 30, 2010Applicant: SILTRON INC.Inventors: Ho-Jun LEE, Yong-Jin KIM, Dong-Kun LEE, Doo-Soo KIM, Ji-Hoon KIM
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Patent number: 7816241Abstract: Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.Type: GrantFiled: July 23, 2008Date of Patent: October 19, 2010Assignee: Siltron, Inc.Inventors: Ho-Jun Lee, Yong-Jin Kim, Dong-Kun Lee, Doo-Soo Kim, Ji-Hoon Kim
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Patent number: 7723217Abstract: The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.Type: GrantFiled: December 10, 2008Date of Patent: May 25, 2010Assignee: Siltron Inc.Inventors: Ho-Jun Lee, Doo-Soo Kim, Dong-Kun Lee, Yong-Jin Kim
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Patent number: 7708832Abstract: Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si3N4) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.Type: GrantFiled: July 22, 2008Date of Patent: May 4, 2010Assignee: Siltron Inc.Inventors: Yong-Jin Kim, Ji-Hoon Kim, Dong-Kun Lee, Doo-Soo Kim, Ho-Jun Lee
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Patent number: 7615470Abstract: The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.Type: GrantFiled: December 13, 2005Date of Patent: November 10, 2009Assignee: Siltron Inc.Inventors: Yong Jin Kim, Dong Kun Lee
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Publication number: 20090155986Abstract: The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.Type: ApplicationFiled: December 10, 2008Publication date: June 18, 2009Applicant: SILTRON INC.Inventors: Ho-Jun Lee, Doo-Soo Kim, Dong-Kun Lee, Yong-Jin Kim
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Publication number: 20090148982Abstract: A compound semiconductor device and method of manufacturing the same. The method includes coating a plurality of spherical balls on a substrate and selectively growing a compound semiconductor thin film on the substrate on which the spherical balls are coated. The entire process can be simplified and a high-quality compound semiconductor thin film can be grown in a short amount of time in comparison to an epitaxial lateral overgrowth (ELO) method.Type: ApplicationFiled: January 21, 2009Publication date: June 11, 2009Applicants: SILTRON INC., POSTECH FOUNDATIONInventors: Gyu-Chul Yi, Sung-Jin An, Yong-Jin Kim, Dong-Kun Lee