Abstract: A method for manufacturing a LiDAR device is proposed. The method may include providing a LiDAR module including a laser emitting module and a laser detecting module to a target region. The method may also include adjusting, on the basis of first detecting data obtained from the laser detecting module, a relative position of a detecting optic module with respect to the laser detecting module. The method may further include adjusting, on the basis of image data obtained from at least one image sensor, a relative position of an emitting optic module with respect to the laser emitting module.

Abstract: A display apparatus according to a concept of the disclosure includes: a display panel configured to display an image in a front direction; a top chassis positioned in a front direction of the display panel; a bottom chassis positioned in a rear direction of the display panel; a rear cover covering a rear side of the bottom chassis; and a stand member being accommodatable in the rear cover and selectively coupled with a rear surface of the rear cover, wherein the rear cover includes an accommodating portion in which the stand member is accommodated and a coupling portion coupled with the stand member, and the stand member includes an inserting protrusion which is inserted into the accommodating portion and the coupling portion.

Abstract: The present invention discloses an encoding apparatus using a Discrete Cosine Transform (DCT) scanning, which includes a mode selection means for selecting an optimal mode for intra prediction; an intra prediction means for performing intra prediction onto video inputted based on the mode selected in the mode selection means; a DCT and quantization means for performing DCT and quantization onto residual coefficients of a block outputted from the intra prediction means; and an entropy encoding means for performing entropy encoding onto DCT coefficients acquired from the DCT and quantization by using a scanning mode decided based on pixel similarity of the residual coefficients.

Abstract: A freight vehicle on which a drone is docked, may include: a transfer device provided in the vehicle and configured to move up and down between an internal space of the vehicle and a roof to receive freight from the drone through the roof of the vehicle or transfer freight to the drone; and a loadspace separated, as a portion of the internal space of the vehicle, from a space where the transfer device is provided and including an open portion formed on a side or a rear of the vehicle, and onto which the freight is loaded.

Abstract: Disclosed is an endoscope apparatus. The endoscope apparatus of the present invention includes: an endoscope including a flexible insertion section to be inserted into a human body; a flexible channel attached to the insertion section so that a part forms a passage in a longitudinal direction of the insertion section; and an assistant arm movably inserted into the passage and manipulated by a control device, and the assistant arm includes forceps capable of gripping a human body tissue, and a bending section bent by the control device to pull the human body tissue griped by the forceps.

Abstract: A semiconductor device includes a substrate, a first active pattern that includes a first side wall and a second side wall opposite to the first side wall in a second horizontal direction, a first insulating structure in a first trench extending in the first horizontal direction on the first side wall of the first active pattern, a second insulating structure in a second trench extending in the first horizontal direction on the second side of the first active pattern, and includes a first insulating layer on side walls and a bottom surface of the second trench, and a second insulating layer in the second trench on the first insulating layer, a gate-cut extending in the first horizontal direction on the first insulating structure, and a gate electrode extending in the second horizontal direction on the first active pattern.

Abstract: The semiconductor device including an active pattern on a substrate and extending in a first direction, a gate structure on the active pattern, including a gate electrode extending in a second direction different from the first direction, a source/drain pattern on at least one side of the gate structure, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern, wherein with respect to an upper surface of the active pattern, a height of an upper surface of the gate electrode is same as a height of an upper surface of the source/drain contact, and the source/drain contact comprises a lower source/drain contact and an upper source/drain contact on the lower source/drain contact, may be provided.

Abstract: A semiconductor device includes a substrate, an active pattern disposed on the substrate and that extends in a first horizontal direction, a field insulating layer disposed on the substrate and that surrounds a sidewall of the active pattern, a gate electrode disposed on the field insulating layer and that extends in a second horizontal direction, a source/drain region disposed on a side of the gate electrode, a first interlayer insulating layer disposed on the field insulating layer and that surrounds a portion of a sidewall of the source/drain region, a second interlayer insulating layer disposed on the first interlayer insulating layer and that surrounds a sidewall of the gate electrode, and a source/drain contact that penetrates through the second interlayer insulating layer and is electrically connected to the source/drain region. The source/drain contact includes a skirt that protrudes from a lower sidewall toward the second interlayer insulating.

Abstract: A semiconductor device includes: a substrate; an active pattern and a field insulating layer surrounding a sidewall of the active pattern on the substrate; first and second gate electrodes on the active pattern and extending in a direction different from that of the active pattern; an interlayer insulating layer surrounding a sidewall of each of the first and second gate electrodes; a gate spacer on opposing sidewalls of each of the first and second gate electrodes that includes a first sidewall and a second sidewall opposite the first sidewall in the first horizontal direction, each of which contacts the interlayer insulating layer; and a first gate cut dividing the second gate electrode into two portions, wherein the first gate cut includes a same material as the gate spacer; and wherein a first width of the first gate cut is smaller than a second width of the gate spacer.

Abstract: A semiconductor device is provided.

Abstract: A semiconductor device includes a substrate, a first active pattern that includes a first side wall and a second side wall opposite to the first side wall in a second horizontal direction, a first insulating structure in a first trench extending in the first horizontal direction on the first side wall of the first active pattern, a second insulating structure in a second trench extending in the first horizontal direction on the second side of the first active pattern, and includes a first insulating layer on side walls and a bottom surface of the second trench, and a second insulating layer in the second trench on the first insulating layer, a gate-cut extending in the first horizontal direction on the first insulating structure, and a gate electrode extending in the second horizontal direction on the first active pattern.

Abstract: A semiconductor device including a gate pattern on a substrate and including a gate dielectric layer, a gate electrode, and a gate capping pattern that are sequentially stacked; a gate spacer on a sidewall of the gate pattern; a source/drain pattern in the substrate; a contact pad on the source/drain pattern, a source/drain contact on the contact pad; and a buried dielectric pattern between the gate spacer and the source/drain contact, wherein the gate spacer includes a first segment between the gate electrode and the source/drain pattern; a second segment that extends from the first segment and between the gate electrode and the source/drain contact; and a third segment on the second segment, the buried dielectric pattern is between the third segment and the source/drain contact, and is absent between the first segment and the contact pad and is absent between the second segment and the source/drain contact.

Abstract: A display device includes a first substrate defining a top surface thereof, a bottom surface thereof facing the top surface, and side surfaces thereof connecting the top and bottom surfaces to each other. The side surfaces included: a first side surface defined by: a first patterned surface including a first pattern of which a length thereof extends in a diagonal direction in a plan view of the first patterned surface, and a second patterned surface which extends obliquely from an upper end of the first patterned surface, the second patterned surface including a second pattern of which a length thereof extends in a perpendicular direction from the upper end of the first patterned surface in a plan view of the second patterned surface.

Abstract: Disclosed herein is a gas turbine and a method of cooling the same. A cooling air supply passage of extracting air out of a compressor of the gas turbine and diverting the air to the outside is formed, and vanes and blades of a turbine are cooled by such cooling air supply passage that does not pass through a central shaft of the gas turbine. Consequently, the consumption of cooling air may be reduced while cooling efficiency is not affected, and the flow rate of cooling air may be more easily controlled.

Abstract: A semiconductor device includes a substrate having an active pattern extending in a first direction, a first gate structure and a second gate structure extending in a second direction, intersecting the first direction, to traverse the active pattern, the first gate structure and the second gate structure isolated from each other while facing each other in the second direction, a gate isolation pattern disposed between the first gate structure and the second gate structure, the gate isolation pattern having a void, and a filling insulating portion positioned lower than upper surfaces of the first gate structure and the second gate structure within the gate isolation pattern, the filling insulating portion being connected to at least an upper end of the void.

Abstract: A display device includes a first substrate defining a top surface thereof, a bottom surface thereof facing the top surface, and side surfaces thereof connecting the top and bottom surfaces to each other. The side surfaces included: a first side surface defined by: a first patterned surface including a first pattern of which a length thereof extends in a diagonal direction in a plan view of the first patterned surface, and a second patterned surface which extends obliquely from an upper end of the first patterned surface, the second patterned surface including a second pattern of which a length thereof extends in a perpendicular direction from the upper end of the first patterned surface in a plan view of the second patterned surface.

Abstract: A semiconductor device includes a fin active region protruding from a substrate and extending in a first direction, a gate electrode covering an upper surface and sidewalls of the fin active region and extending in a second direction crossing the first direction, a gate spacer structure on opposite sidewalls of the gate electrode, an insulating capping layer on the gate electrode and extending in the second direction, an insulating liner on opposite sidewalls of the gate electrode and on an upper surface of the gate spacer structure, and a self-aligned contact at a side of the gate electrode. The insulating liner may have a second thickness greater than a first thickness of the gate spacer structure. A sidewall of the self-aligned contact may be in contact with the gate spacer structure and the insulating liner.

Abstract: A display device includes a first substrate defining a top surface thereof, a bottom surface thereof facing the top surface, and side surfaces thereof connecting the top and bottom surfaces to each other. The side surfaces included: a first side surface defined by: a first patterned surface including a first pattern of which a length thereof extends in a diagonal direction in a plan view of the first patterned surface, and a second patterned surface which extends obliquely from an upper end of the first patterned surface, the second patterned surface including a second pattern of which a length thereof extends in a perpendicular direction from the upper end of the first patterned surface in a plan view of the second patterned surface.

Abstract: A method of fabricating a semiconductor device is provided as follows. A strain relaxed buffer (SRB) layer is formed on a substrate. The SRB layer is formed of a first silicon germanium alloy (SiGe) layer which has a first atomic percent of germanium (Ge) atoms. A heterogeneous channel layer is formed on the SRB layer. The heterogeneous channel layer includes a silicon layer on a first region of the SRB layer and a second SiGe layer on a second region of the SRB layer. The second SiGe layer includes a second atomic percent of germanium greater than the first atomic percent of germanium atoms. The silicon layer is in contact with the second SiGe layer.