Patents by Inventor Dong Kyun Yim

Dong Kyun Yim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting diode apparatus
    Patent number: 11482653
    Abstract: A light emitting diode apparatus is provided. The light emitting diode apparatus includes a wavelength conversion layer, a light emitting diode layer, a light transmission layer, and a sheath layer. The wavelength conversion layer has a first refractive index. The light emitting diode layer includes a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer. The light transmission layer is arranged on the wavelength conversion layer, surrounds a sidewall of the light emitting diode layer and contacts the sidewall of the light emitting diode layer, and has a second refractive index. The sheath layer is arranged to cover the light emitting diode layer and the light transmission layer, and has a third refractive index less than the second refractive index.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: October 25, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Kuk Lee, Dae Young Lee, Moon Sub Kim, Sung Jin Ahn, Seung Hwan Lee, Dong Kyun Yim, Woo Seok Jang
  • LIGHT EMITTING DIODE APPARATUS
    Publication number: 20190371988
    Abstract: A light emitting diode apparatus is provided. The light emitting diode apparatus includes a wavelength conversion layer, a light emitting diode layer, a light transmission layer, and a sheath layer. The wavelength conversion layer has a first refractive index. The light emitting diode layer includes a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer. The light transmission layer is arranged on the wavelength conversion layer, surrounds a sidewall of the light emitting diode layer and contacts the sidewall of the light emitting diode layer, and has a second refractive index. The sheath layer is arranged to cover the light emitting diode layer and the light transmission layer, and has a third refractive index less than the second refractive index.
    Type: Application
    Filed: January 31, 2019
    Publication date: December 5, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Kuk LEE, Dae Young LEE, Moon Sub KIM, Sung Jin AHN, Seung Hwan LEE, Dong Kyun YIM, Woo Seok JANG
  • Semiconductor light emitting device and method of manufacturing the same
    Patent number: 8852972
    Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: October 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Rak Sohn, Dong Kyun Yim, Seul Gee Lee, Chul Soo Yoon