Abstract: A semiconductor memory device includes a substrate having a cell array area and a core area near the cell array area, the cell array area including a direct contact hole exposing an active region, a buried contact in the cell array area, the buried contact being connected to a storage element, a direct contact in the cell array area, the direct contact including an upper layer and a lower layer, the upper layer including a metal, and the lower layer being in the direct contact hole in direct contact with the active region and including a silicide of the metal, bit lines in contact with the upper layer of the direct contact, and word lines crossing the bit lines.

Abstract: A semiconductor device may include a substrate including a cell block region and a peripheral region, which are adjacent to each other in a first direction, an active pattern on the cell block region, a bit line provided on the active pattern and extended in the first direction, a first insulating structure in contact with the bit line, and a contact plug electrically connected to the bit line. The bit line may include a first curved portion, a first linear portion connected to the first curved portion, and a first intervening portion connected to the first curved portion. The contact plug may be overlapped with the first curved portion.

Abstract: The composite input device includes a first detector configured to detect a rotating operation, a second detector configured to detect a tilting operation, and a substrate disposed perpendicular to a rotational axis of the rotating operation. In a plan view in a direction perpendicular to the substrate, the first detector is disposed inside an imaginary circle. The imaginary circle has a center at an intersection of the substrate and an the rotational axis of the rotating operation and has an outer circumference that passes through an outer edge of the second detector positioned farthest away from the center of the imaginary circle.

Abstract: A semiconductor device including a first contact plug structure on a substrate, a lower spacer structure on a sidewall of the first contact plug structure, and a bit line structure on the first contact plug structure and including a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate may be provided. The first contact plug structure may include a conductive pad contacting the upper surface of the substrate, an ohmic contact pattern on the conductive pad, and a conductive filling pattern on the ohmic contact pattern. The conductive filling pattern may include metal, and include a lower portion having a relatively large width and an upper portion having a relatively small width. The lower spacer structure may contact a sidewall of the conductive filling pattern.

Abstract: It is provided a novel LLC resonant converter with high reliability and the operation method thereof. The LLC resonant converter proposed in the present invention includes an original converter including a primary side circuit on which two half-bridge cells are connected in parallel and a secondary side circuit on which two half-bridge cells are connected in series and a redundant converter having the same configuration with the original converter, and connected with the original converter at a midpoint of a secondary winding.

Abstract: The composite input device includes a first detector configured to detect a rotating operation, a second detector configured to detect a tilting operation, and a substrate disposed perpendicular to a rotational axis of the rotating operation. In a plan view in a direction perpendicular to the substrate, the first detector is disposed inside an imaginary circle. The imaginary circle has a center at an intersection of the substrate and an the rotational axis of the rotating operation and has an outer circumference that passes through an outer edge of the second detector positioned farthest away from the center of the imaginary circle.