Abstract: An organic light emitting diode display includes a substrate, a scan line on the substrate to transfer a scan signal, a data line on the substrate to transfer a data signal, a switching transistor connected with the scan line and the data line, a driving transistor connected with the switching transistor, and an organic light emitting diode electrically connected to the driving transistor. The driving transistor may include a first semiconductor layer, the switching transistor may include a second semiconductor layer, and the first semiconductor layer may have a surface roughness that is greater than that of the second semiconductor layer.

Abstract: A coil component includes a body including a magnetic material; a support member disposed in the body; and a coil pattern on the support member in the body. The coil pattern may include a first conductor layer formed on the support member and having a planar spiral shape; a second conductor layer formed on the first conductor layer and having a volume of a lower portion greater than a volume of an upper portion; and a third conductor layer formed to cover the second conductor layer from the outside of the second conductor layer.

Abstract: A storage system includes a host device and a storage device. The host device generates a write command, a logical address of write data corresponding to the write command, and a selective purge tag indicating that the write data are targeted for selective purge. The storage device receives the write command, the logical address, and the selective purge tag, stores write data, and logically erases the stored write data upon receiving an erase command from the host device. In addition, the storage device physically erases the stored write data upon receiving a selective purge request from the host device.

Abstract: The present invention relates to a Myoviridae bacteriophage Esc-COP-4 that is isolated from the nature and can kill specifically enteroinvasive E. coli strains, which has a genome represented by the nucleotide sequence of SEQ. ID. NO: 1 (Accession NO: KCTC 12663BP), and a method for preventing and treating the infections of enteroinvasive E. coli using the composition comprising said bacteriophage as an active ingredient.

Abstract: A compound for an organic optoelectric device represented by Chemical Formula I, an organic optoelectric device including the same, and a display device are disclosed. Details of Chemical Formula I are defined in the specification.

Abstract: A metal line includes a conductive layer containing aluminum (Al) or an aluminum alloy, a first capping layer on the conductive layer, the first capping layer containing titanium nitride (TiNx), and a second capping layer on the first capping layer, the second capping layer containing titanium (Ti).

Abstract: An image sensor includes a substrate including opposite first and second surfaces, first and second gates, on the first surface of the substrate, which each extend in a first direction, a first isolation layer in the substrate between the first and second gates and having a first width in a second direction crossing the first direction, a second isolation layer on the first isolation layer, in the substrate, and having a second width smaller than the first width in the second direction. The second isolation layer is closer to the second surface of the substrate than the first isolation layer. A vertical distance between the first isolation layer and the second isolation layer is ? or less of a height of the first isolation layer.

Abstract: A stereo camera device according to one embodiment of the present invention comprises: a light pattern projection unit for projecting a predetermined pattern; a first camera unit for photographing the pattern; a second camera for photographing the pattern; and a control unit for controlling the light pattern projection of the light pattern projection unit, and determining whether to perform rectification between a first image and a second image by analyzing the first image photographed by the first camera unit and the second image photographed by the second camera unit.

Abstract: An over slam bumper assembly includes a reinforcement member mounted on a door panel, and an over slam bumper including a first portion disposed between the door panel and the reinforcement member and a second portion disposed between the door panel and a vehicle body to contact the vehicle body when a door is closed.

Abstract: Provided is a cascode circuit including first and second transistors connected between a drain terminal and a source terminal in cascode form, a level sifter configured to change a voltage level of a switching control signal applied to a gate terminal and provide the changed switching control signal to a gate of the first transistor, a buffer configured to delay the switching control signal and provide the delayed switching control signal to a gate of the second transistor, and a first resistor connected between the level shifter and the gate of the first transistor.

Abstract: Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.

Abstract: A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first energy density to an amorphous silicon layer including an oxidation layer thereon, to form a first polysilicon layer including thereon portions of the oxidation layer at grain boundaries of the first polysilicon layer; removing the portions of the oxidation layer at the grain boundaries of the first polysilicon layer; and irradiating a second excimer laser beam having a second energy density of 80% to 100% of the first energy density to the first polysilicon layer from which the portions of the oxidation layer at the grain boundaries thereof are removed, to form a second polysilicon layer as the polysilicon layer of the thin film transistor.

Abstract: Provided is a pneumatic tire including a tread having a groove; a pair of side walls respectively arranged at opposite ends of the tread; and a sound absorbing member positioned on an inner side of the pneumatic tire and including a pair of edges and a central part, the pair of edges being respectively adjacent to the pair of side walls and having a first thickness, and the central part being positioned between the pair of edges and having a second thickness, the second thickness being different from the first thickness.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 ? or more to 144 ? or less.

Abstract: Provided is a gate-all-around device. The gate-all-around device includes a substrate, a pair of heterojunction source/drain regions provided on the substrate, a heterojunction channel region provided between the pair of heterojunction source/drain regions, and a pair of ohmic electrodes provided on the pair of heterojunction source/drain regions, respectively. Each of the pair of heterojunction source/drain regions includes a pair of two-dimensional electron gas layers. The pair of ohmic electrodes extends toward an upper surface of the substrate and pass through the pair of heterojunction source/drain regions, respectively.

Abstract: An operating method of a storage device that includes a nonvolatile memory device and a controller configured to control the nonvolatile memory device includes sending map data from the storage device to a host device, the map data mapping one or more of a plurality of physical addresses of the nonvolatile memory device to one or more of a plurality of logical addresses of the host device; receiving, at the storage device, a read request from the host device; if the read request includes a physical address, reading data from the nonvolatile memory device based on the included physical address; and if the read request does not include a physical address, translating a logical address of the read request into a first physical address, and reading data from the nonvolatile memory device based on the translated first physical address.

Abstract: A metal-air battery including: a negative electrode metal layer; a negative electrode electrolyte layer disposed on the negative electrode metal layer; a positive electrode layer disposed on the negative electrode electrolyte layer, the positive electrode layer comprising a positive electrode material which is capable of using oxygen as an active material; and a gas diffusion layer disposed on the positive electrode layer, wherein the negative electrode electrolyte layer is between the negative electrode metal layer and the positive electrode layer; wherein the negative electrode metal layer, the negative electrode electrolyte layer, and the positive electrode layer are disposed on the gas diffusion layer so that the positive electrode layer contacts a lower surface and an opposite upper surface of the gas diffusion layer, and wherein one side surface of the gas diffusion layer is exposed to an outside.

Abstract: A metal-air battery including: a negative electrode metal layer; a negative electrode electrolyte layer disposed on the negative electrode metal layer; a positive electrode layer disposed on the negative electrode electrolyte layer, the positive electrode layer comprising a positive electrode material which is capable of using oxygen as an active material; and a gas diffusion layer disposed on the positive electrode layer, wherein the negative electrode electrolyte layer is between the negative electrode metal layer and the positive electrode layer; wherein the negative electrode metal layer, the negative electrode electrolyte layer, and the positive electrode layer are disposed on the gas diffusion layer so that the positive electrode layer contacts a lower surface and an opposite upper surface of the gas diffusion layer, and wherein one side surface of the gas diffusion layer is exposed to an outside.

Abstract: A flying object with a landing gear module serving as a floating weight that can be used simultaneously with an airship and an aerial mooring type aerostat, and more particularly, a flying object capable of simultaneously allowing a landing gear to serve as a floating weight, thereby stably simplifying a mooring process of the flying object and manufacturing the flying object at low cost.

Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.