Abstract: Systems and techniques for determining and using multiple types of offsets for providing wafers to a transfer pedestal of a multi-station processing chamber are disclosed. Such techniques may be used to provide pedestal-specific offsets that may be selected based on which pedestal of a multi-station chamber is assigned to a particular wafer. Similar techniques may be used to provide wafer support-specific offsets based on which indexer arm of an indexer is assigned to a given wafer.

Abstract: Systems and techniques for determining and using multiple types of offsets for providing wafers to a transfer pedestal of a multi-station processing chamber are disclosed. Such techniques may be used to provide pedestal-specific offsets that may be selected based on which pedestal of a multi-station chamber is assigned to a particular wafer. Similar techniques may be used to provide wafer support-specific offsets based on which indexer arm of an indexer is assigned to a given wafer.

Abstract: Embodiments of the present disclosure relate to a music generation method, apparatus, system and storage medium. In at least some embodiments of the present disclosure, by displaying a music generation interface including a text input box, a music generation control and a music configuration item in response to an operation by a user triggering the music generation control, so that the user can input a custom text in the text input box and configure a music melody through the music configuration item, and then in response to an operation by the user triggering the music generation control, it is possible to generate a voice based on the custom text input by the user, and generate a music including the voice corresponding to the custom text based on the generated voice and the user configured music melody.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, an apparatus configured to deposit a plurality of film layers having different compositions on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a process station reactant feed fluidically coupled to a gas inlet of the process station, and fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed, and supplied via a shared path to the process station.

Abstract: Systems and techniques for determining and using multiple types of offsets for providing wafers to a transfer pedestal of a multi-station processing chamber are disclosed. Such techniques may be used to provide pedestal-specific offsets that may be selected based on which pedestal of a multi-station chamber is assigned to a particular wafer. Similar techniques may be used to provide wafer support-specific offsets based on which indexer arm of an indexer is assigned to a given wafer.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: Embodiments of the present application provide a method, a system, a server and a user terminal for displaying comment data of a user. The user has a user identifier. The comment data comprises self-owned comment data. The user identifier has an associated self-owned comment array object. The self-owned comment array object comprises storage tree node information. The self-owned comment data is stored in the storage tree node information. The method comprises: receiving a self-owned comment viewing request sent by a client, a user identifier being included in the self-owned comment viewing request; extracting storage tree node information of a self-owned comment array object associated with the user identifier; feeding back to the client the self-owned comment data in the storage tree node information, such that the self-owned comment data in the storage tree node information is displayed on the client.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: A surface processing method for a high hardness and abrasion resistant zinc alloy surface of imitation plating hexavalent chromium, includes following steps. Perform polishing for surface of zinc alloy workpiece, and leave it to dry; place the dried up workpiece into Hydrofluoric Acid solution to raise adhesion; wash the activated workpiece clean with pure water, and then place it in a silane oxide solution, to process it into silane conversion film; place the workpiece into an electrophoresis solution to perform electrophoresis, to achieve an electrophoresis application layer; use an UF solution to wash the workpiece; perform pre-drying for the workpiece; perform UV curing for the workpiece; hang the workpiece in a PVD furnace, perform sputtering of chromium, to form a metal-ceramic composite film; and perform PVD on surface of the workpiece, to deposit a layer of transparent DLC film on the workpiece.

Abstract: A reshaping device for reshaping a workpiece, includes a worktable, a reshaping assembly, a measuring unit, a positioning assembly, and a controller electrically connected to the reshaping assembly, the measuring unit, and the positioning assembly. The positioning assembly includes a pair of positioning subassemblies and a movable supporting subassembly. Each positioning subassembly comprises a supporting bracket and two positioning members, the two supporting brackets are distributed on the worktable, spaced from each other, for holding the workpiece. The movable supporting subassembly comprises two transmission members and two driving members. The two transmission members are stacked on top of each other and disposed on the worktable. The two driving members are respectively assembled to the two transmission members and drive the two transmission members to slide along different directions, thereby supporting the workpiece. The present disclosure further discloses a positioning assembly.

Abstract: A surface processing method for a high hardness and abrasion resistant zinc alloy surface of imitation plating hexavalent chromium, includes following steps. Perform polishing for surface of zinc alloy workpiece, and leave it to dry; place the dried up workpiece into Hydrofluoric Acid solution to raise adhesion; wash the activated workpiece clean with pure water, and then place it in a silane oxide solution, to process it into silane conversion film; place the workpiece into an electrophoresis solution to perform electrophoresis, to achieve an electrophoresis application layer; use an UF solution to wash the workpiece; perform pre-drying for the workpiece; perform UV curing for the workpiece ; hang the workpiece in a PVD furnace, perform sputtering of chromium, to form a metal-ceramic composite film; and perform PVD on surface of the workpiece, to deposit a layer of transparent DLC film on the workpiece.

Abstract: The methods and apparatus disclosed herein concern a process that may be referred to as a “soft anneal.” A soft anneal provides various benefits. Fundamentally, it reduces the internal stress in one or more silicon layers of a work piece. Typically, though not necessarily, the internal stress is a compressive stress. A particularly beneficial application of a soft anneal is in reduction of internal stress in a stack containing two or more layers of silicon. Often, the internal stress of a layer or group of layers in a stack is manifest as wafer bow. The soft anneal process can be used to reduce compressive bow in stacks containing silicon. The soft anneal process may be performed without causing the silicon in the stack to become activated.

Abstract: Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: The method and apparatus disclosed herein relate to preparing a stack structure for an electronic device on a semiconductor substrate. A particularly beneficial application of the method is in reduction of internal stress in a stack containing multiple layers of silicon. Typically, though not necessarily, the internal stress is a compressive stress, which often manifests as wafer bow. In some embodiments, the method reduces the internal stress of a work piece by depositing phosphorus doped silicon layers having low internal compressive stress or even tensile stress. The method and apparatus disclosed herein can be used to reduce compressive bow in stacks containing silicon.

Abstract: The method and apparatus disclosed herein relate to preparing a stack structure for an electronic device on a semiconductor substrate. A particularly beneficial application of the method is in reduction of internal stress in a stack containing multiple layers of silicon. Typically, though not necessarily, the internal stress is a compressive stress, which often manifests as wafer bow. In some embodiments, the method reduces the internal stress of a work piece by depositing phosphorus doped silicon layers having low internal compressive stress or even tensile stress. The method and apparatus disclosed herein can be used to reduce compressive bow in stacks containing silicon.

Abstract: A reshaping device for reshaping a workpiece, includes a worktable, a reshaping assembly, a measuring unit, a positioning assembly, and a controller electrically connected to the reshaping assembly, the measuring unit, and the positioning assembly. The positioning assembly includes a pair of positioning subassemblies and a movable supporting subassembly. Each positioning subassembly comprises a supporting bracket and two positioning members, the two supporting brackets are distributed on the worktable, spaced from each other, for holding the workpiece. The movable supporting subassembly comprises two transmission members and two driving members. The two transmission members are laminated together and disposed on the worktable. The two driving members are respectively assembled to the two transmission members and drive the two transmission members to slide along different directions, thereby supporting the workpiece. The present disclosure further discloses a positioning assembly.

Abstract: Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

Abstract: Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 ? as measured on a silicon substrate.