Abstract: A semiconductor memory device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region, the boundary element isolation layer being in a boundary element isolation recess and including first and second boundary liner layers extending along a profile of the boundary element isolation recess and a first gate structure on the core region and at least a part of the boundary element isolation layer, wherein the first gate structure includes a first high dielectric layer, and a first gate insulating pattern below the first high dielectric layer, with a top surface of the substrate being a base reference level, the first gate insulating pattern does not overlap a top surface of the first boundary liner layer, and wherein the first gate insulating pattern includes a first_1 gate insulating pattern between a top surface of the second boundary liner layer and a bottom surface of the first high

Abstract: The present invention relates to a chemical and biological integrated degradation process for PET, for recycling PET, and, more specifically, the present invention provides a PET upcycling technique for producing a high-value product via a chemical pretreatment process of PET, a TPA and EG production process using an enzyme, and a process for converting TPA and EG to PCA and GLA, respectively.

Abstract: A memory storage device that performs real-time monitoring is provided. The memory storage device comprises a memory controller, and a status indicating module/circuit, wherein the memory controller is configured to perform a first a second initialization operation, the first and second initialization operations performed in response to turning-on of the memory storage device, to generate a first status parameter regarding a status of the memory storage device in which the first initialization operation is performed, and to generate a second status parameter regarding the status of the memory storage device in which a second initialization operation is performed. The status indicating circuit includes a first transistor configured to operate on the basis of the first status parameter, a first resistor connected to the first transistor, a second transistor configured to operate on the basis of the second status parameter, and a second resistor connected to the second transistor.

Abstract: A roof airbag for a vehicle includes: an airbag cushion located at a roof panel of the vehicle and configured to be unfolded from a first side portion to a second side portion of the roof panel during an operation of the airbag cushion; a first seam portion extended in a direction intersected with an unfolded direction of the airbag cushion and allowing upper and lower surfaces of the airbag cushion to be in contact with each other; and an inflator coupled to the first side portion of the roof panel, and connected to the airbag cushion and configured to inject gas into the airbag cushion so as to allow the airbag cushion to be unfolded from the first side portion to the second side portion of the roof panel.

Abstract: A display device includes a base layer including a first base layer and a second base layer disposed on a rear surface of the first base layer, light emitting elements disposed on a surface of the first base layer, and pads including a first pad and a second pad, which are disposed on the rear surface of the first base layer and are spaced apart from each other. The base layer further includes blocking layers which are disposed between the first base layer and the second base layer and at least portions of the blocking layers do not overlap the pads in a plan view. The blocking layers include a first blocking layer and a second blocking layer, which are disposed in different layers.

Abstract: A display apparatus includes a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area, a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and a electrode of a thin film transistor in the display area, a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode, a connecting member contacting the connecting electrode, and a driving member including a driving circuit, the driving member being connected to the connecting member.

Abstract: A display device comprises a first substrate comprising a first contact hole, a laser absorption layer disposed on the first substrate and containing amorphous silicon, a first barrier insulating layer disposed on the laser absorption layer, fan-out lines disposed in a metal layer on the first barrier insulating layer and comprising pad portions inserted into second contact holes provided in the first barrier insulating layer and the laser absorption layer, a second barrier insulating layer disposed on the metal layer, a second substrate disposed on the second barrier insulating layer, and a display layer disposed on the second substrate. The second substrate is inserted into a third contact hole provided in the second barrier insulating layer, the first barrier insulating layer, and the laser absorption layer disposed between the pad portions.

Abstract: A display device may include: a substrate including a display area and a non-display area; and pixels in the display area, and each including sub-pixels. Each sub-pixel may include a pixel circuit layer, and a display element layer including at least one light emitting element. The display element layer may include: a first electrode on the pixel circuit layer; a second electrode on the first electrode and electrically insulated from the first electrode; the light emitting element including a first end portion coupled to the first electrode and a second end portion coupled to the second electrode, and between the first electrode and the second electrode; an intermediate layer enclosing at least one area of the light emitting element, and on the first electrode; a connection line electrically connected to the second electrode. The second electrode may be on the intermediate layer.

Abstract: A display device comprises a first electrode, a second electrode disposed to be spaced apart from the first electrode and face the first electrode, a first insulating layer disposed to cover the first electrode and the second electrode, a second insulating layer disposed on at least a part of the first insulating layer and exposing at a part of a region where the first electrode and the second electrode overlaps the first insulating layer and at least one light emitting element on the exposed first insulating layer between the first electrode and the second electrode, wherein the second insulating layer includes at least one opening exposing the first insulating layer and disposed to be spaced apart from each other on a region where the first electrode and the second electrode face each other, and a bridge portion between the openings, and the light emitting element is disposed on the opening.

Abstract: A transparent article is described herein that includes: a glass-ceramic substrate comprising first and second primary surfaces opposing one another and a crystallinity of at least 40% by weight; and an optical film structure disposed on the first primary surface. The optical film structure comprises a plurality of alternating high refractive index (RI) and low RI layers and a scratch-resistant layer. The article also exhibits an average photopic transmittance of greater than 80% and a maximum hardness of greater than 10 GPa, as measured by a Berkovich Hardness Test over an indentation depth range from about 100 nm to about 500 nm. The glass-ceramic substrate comprises an elastic modulus of greater than 85 GPa and a fracture toughness of greater than 0.8 MPa·?m. Further, the optical film structure exhibits a residual compressive stress of ?700 MPa and an elastic modulus of ?140 GPa.

Abstract: Provided are a computer system for producing audio content for realizing a user-customized being-there and a method thereof. The computer system may be configured to generate audio files based on respective audio signals that are respectively generated from a plurality of objects at a venue, set spatial features at the venue for the objects, respectively, using a production tool, and generate metadata for the audio files based on the spatial features. An electronic device may realize a being-there at the venue by rendering the audio files based on the spatial features in the metadata. That is, a user of the electronic device may feel a user-customized being-there as if the user directly listens to audio signals generated from corresponding objects at a venue in which the objects are provided.

Abstract: A semiconductor memory device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region, the boundary element isolation layer being in a boundary element isolation recess and including first and second boundary liner layers extending along a profile of the boundary element isolation recess and a first gate structure on the core region and at least a part of the boundary element isolation layer, wherein the first gate structure includes a first high dielectric layer, and a first gate insulating pattern below the first high dielectric layer, with a top surface of the substrate being a base reference level, the first gate insulating pattern does not overlap a top surface of the first boundary liner layer, and wherein the first gate insulating pattern includes a first_1 gate insulating pattern between a top surface of the second boundary liner layer and a bottom surface of the first high

Abstract: A system for detecting an accident risk in a working place that can determine a work stage of the working place where various kinds of works, such as a cargo loading and unloading workshop, are performed or determine whether or not there is a risk that an accident may occurs in the working place is disclosed. In the disclosed system for detecting the accident risk in the working place, a camera is used to photograph the working place, only information about an object recognized by analyzing the image is transmitted to the server without transmitting the photographed image to the server, thereby minimizing an amount of information transmitted from the camera to the server.

Abstract: The disclosure relates to a touch pen capable of being used in electronic devices. The touch pen includes a pen body having an accommodation space extending in a longitudinal direction, a pen tip coupled to one end of the pen body, a plurality of weight members disposed inside the accommodation space of the pen body, and a buffer material disposed between adjacent weight members among the plurality of weight members to prevent movement of the plurality of weight members in the longitudinal direction.

Abstract: A system and method may detect one or more shooting sounds and provide guidance to one or more evacuating people when an active shooting event has occurred indoors, thereby minimizing a secondary damage. The system comprises: a plurality of stations configured to detect one or more shooting sounds and transmit detection of the one or more shooting sounds; and a response server configured to receive the detection of one or more shooting sounds over a communication network, to generate action commands, respectively corresponding to each of the stations, based on the detection of the one or more shooting sounds, and to transmit the respective action commands to the each of the corresponding stations over the communication network.

Abstract: The disclosure relates to a touch pen capable of being used in electronic devices. The touch pen includes a pen body having an accommodation space extending in a longitudinal direction, a pen tip coupled to one end of the pen body, a plurality of weight members disposed inside the accommodation space of the pen body, and a buffer material disposed between adjacent weight members among the plurality of weight members to prevent movement of the plurality of weight members in the longitudinal direction.

Abstract: A semiconductor memory device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region, the boundary element isolation layer being in a boundary element isolation recess and including first and second boundary liner layers extending along a profile of the boundary element isolation recess and a first gate structure on the core region and at least a part of the boundary element isolation layer, wherein the first gate structure includes a first high dielectric layer, and a first gate insulating pattern below the first high dielectric layer, with a top surface of the substrate being a base reference level, the first gate insulating pattern does not overlap a top surface of the first boundary liner layer, and wherein the first gate insulating pattern includes a first_1 gate insulating pattern between a top surface of the second boundary liner layer and a bottom surface of the first high

Abstract: Disclosed herein are an apparatus and method for achieving distributed consensus based on decentralized Byzantine fault tolerance. The apparatus may include one or more processors and an execution memory for storing at least one program that is executed by the one or more processors, wherein the program is configured to receive delegate request messages, each including a first transaction for requesting distributed consensus proposed by a client, and determine congress candidate nodes forming a consensus quorum, to be consensus nodes based on the delegate request messages, generate a prepare message that includes a second transaction for obtaining consent to results of determination of the consensus nodes, and send the prepare message to the consensus nodes, and receive commit messages, each including an electronic signature of a corresponding consensus node, from the respective consensus nodes, and broadcast a reply message indicative of results of verification of the electronic signatures.

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.