Patents by Inventor Dong Park

Dong Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8154640
    Abstract: An image sensor includes a plurality of unit pixels arranged in an array. Each unit pixel includes a plurality of sub-pixels configured to be irradiated by light having the same wavelength. Each sub-pixel includes a plurality of floating body transistors. Each floating body transistor includes a source region, a drain region, a floating body region between the source region and the drain region, and a gate electrode formed on the floating body region.
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: April 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae-kil Cha, Bok-ki Min, Young-gu Jin, Won-joo Kim, Seung-hoon Lee, Yoon-dong Park
  • Patent number: 8148767
    Abstract: A semiconductor memory device includes a semiconductor substrate, a control gate electrode recessed in the semiconductor substrate, a storage node layer interposed between a sidewall of the control gate electrode and the semiconductor substrate, a tunneling insulation layer interposed between the storage node layer and the semiconductor substrate, a blocking insulation layer interposed between the storage node layer and the control gate electrode, and first and second channel regions formed around a surface of the semiconductor substrate to at least partially surround the control gate electrode. The semiconductor memory device may include a plurality of control gate electrodes, storage node layers, tunneling insulation layers, blocking insulation layers, and continuous first and second channel regions.
    Type: Grant
    Filed: February 23, 2007
    Date of Patent: April 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoon-dong Park, June-mo Koo, Kyoung-lae Cho
  • Patent number: 8148762
    Abstract: Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: April 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Sung Joe, Yoon-dong Park, Young-gu Jin, Seung-hyuk Chang
  • Patent number: 8143685
    Abstract: An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.
    Type: Grant
    Filed: July 23, 2009
    Date of Patent: March 27, 2012
    Assignee: Samsung Electronics CP., Ltd.
    Inventors: Dae-kil Cha, Young-gu Jin, Bok-ki Min, Yoon-dong Park
  • Publication number: 20120069654
    Abstract: Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.
    Type: Application
    Filed: November 23, 2011
    Publication date: March 22, 2012
    Inventors: Kyoung Lae CHO, Seung-Hwan Song, Yoong Dong Park, Jun Jin Kong, Jae Hong Kim
  • Patent number: 8139387
    Abstract: Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
    Type: Grant
    Filed: May 14, 2010
    Date of Patent: March 20, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoon-dong Park, Jo-won Lee, Chung-woo Kim, Eun-hong Lee, Sun-ae Seo, Woo-joo Kim, Hee-soon Chae, Soo-doo Chae, I-hun Song
  • Patent number: 8130442
    Abstract: An optical amplifying medium, a method of manufacturing the optical amplifying medium are provided, and an optical device comprising the optical amplifying medium. The optical amplifying medium includes a multi-layer structure in which a first material layer doped with an activator and a second material layer that comprises a sensitizer are stacked.
    Type: Grant
    Filed: September 8, 2008
    Date of Patent: March 6, 2012
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Dae-kil Cha, Jung-hoon Shin, Yoon-dong Park, Young-gu Jin, Moon-seung Yang, In-sung Joe, Jee-soo Chang
  • Publication number: 20120038904
    Abstract: A unit pixel included in a photo-detection device, the unit pixel including a floating diffusion region in a semiconductor substrate, a ring-shaped collection gate over the semiconductor substrate, a ring-shaped drain gate over the semiconductor substrate, and a drain region in the semiconductor substrate, wherein the collection gate and the drain gate are respectively arranged between the floating diffusion region and the drain region.
    Type: Application
    Filed: July 21, 2011
    Publication date: February 16, 2012
    Inventors: Eric R. FOSSUM, Yoon-Dong Park
  • Publication number: 20120026790
    Abstract: Provided are a semiconductor device having a block state confirmation cell that may store information indicating the number of data bits written to a plurality of memory cells, a method of reading memory data based on the number of the data bits written, and/or a memory programming method of storing the information indicating the number of the data bits written. The semiconductor device may include one or more memory blocks and a controller. Each of the memory blocks may include a plurality of memory cells each storing data, and a block state confirmation cell storing information indicating the number of data bits written to the memory cells. The controller may read the data bits from the memory blocks based on the number of data bits, which is indicated in the information in the block state confirmation cell.
    Type: Application
    Filed: September 1, 2011
    Publication date: February 2, 2012
    Inventors: Ju-hee Park, Jae-woong Hyun, Kyoung-lae Cho, Yoon-dong Park, Seung-hoon Lee, Kee-won Kwon
  • Patent number: 8102692
    Abstract: Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged alternately. The first magnetic domains correspond to first data and the second magnetic domains correspond to second data. A verification sensor is arranged at an end of the verifying region. A current applying element is configured to apply one or more pulse currents to the magnetic track. A first counter is connected to the verification sensor and configured to count the number of magnetic domains passing through the verification sensor.
    Type: Grant
    Filed: August 11, 2008
    Date of Patent: January 24, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-sung Joe, Yoon-dong Park, Seung-hoon Lee
  • Publication number: 20120012899
    Abstract: Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.
    Type: Application
    Filed: September 21, 2011
    Publication date: January 19, 2012
    Inventors: Young-gu Jin, Dae-Kil Cha, Seung-hoon Lee, Yoon-dong Park
  • Publication number: 20120008667
    Abstract: Disclosed is a communication apparatus and method in a programmable logic controller (PLC). In a communication method, a micro processing unit (MPU) decides whether or not an interrupt signal is generated. When it is decided that the interrupt signal has been generated, the MPU communicates with an external programming and debugging tool (PADT).
    Type: Application
    Filed: June 27, 2011
    Publication date: January 12, 2012
    Inventor: Jo Dong PARK
  • Patent number: 8085599
    Abstract: Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.
    Type: Grant
    Filed: June 11, 2010
    Date of Patent: December 27, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung Lae Cho, Seung-Hwan Song, Yoon Dong Park, Jun Jin Kong, Jae Hong Kim
  • Publication number: 20110287298
    Abstract: A battery pack includes a plurality of battery modules, each battery module including a plurality of battery units with positive and negative electrode terminals, and each battery unit including a plurality of battery cells, a plurality of bus bars connecting positive electrode terminals to negative electrode terminals of adjacent battery units, battery modules adjacent to each other in a horizontal direction being electrically connected to each other via the bus bar to form a loop, and a connection member electrically connecting battery modules adjacent to each other in a vertical direction.
    Type: Application
    Filed: December 27, 2010
    Publication date: November 24, 2011
    Inventors: Shi-Dong PARK, Tae-Yong Kim, Charles Kim, Hyun-ye Lee
  • Patent number: 8064254
    Abstract: A non-volatile memory device includes at least one semiconductor column having a first sidewall and a second sidewall. The device also includes at least one gate electrode is disposed on the first sidewall and at least one control gate electrode disposed on the second sidewall. The device further includes at least one charge storage layer is disposed between the second sidewall and the at least one control gate electrode. The at least one gate electrode and the at least one control gate electrode may be disposed on opposite sides of the at least one semiconductor column such that they commonly control a channel region in the semiconductor column.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: November 22, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Suk-pil Kim, Yoon-dong Park
  • Patent number: 8058701
    Abstract: Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: November 15, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Deok-kee Kim, Yoon-dong Park, Seung-hoon Lee, I-hun Song, Won-joo Kim, Young-gu Jin, Hyuk-soon Choi, Suk-pil Kim
  • Patent number: D649501
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: November 29, 2011
    Inventors: Gordon M Platto, Earl Clyde Lucas, Dong Park
  • Patent number: D649502
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: November 29, 2011
    Assignee: Ford Motor Company
    Inventors: Gordon M Platto, Earl Clyde Lucas, Dong Park
  • Patent number: D649503
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: November 29, 2011
    Assignee: Ford Motor Company
    Inventors: Gordon M Platto, Earl Clyde Lucas, Dong Park
  • Patent number: D649504
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: November 29, 2011
    Assignee: Ford Motor Company
    Inventors: Gordon M Platto, Earl Clyde Lucas, Dong Park