Abstract: A semiconductor device and a method for fabricating the same are disclosed, which can prevent migration of copper (Cu) ion when forming a Through Silicon Via (TSV). The semiconductor device includes a through silicon via (TSV) formed to pass through a semiconductor substrate; an oxide film located at a lower sidewall of the TSV; and a first prevention film formed to cover an upper portion of the TSV, an upper sidewall of the TSV, and an upper surface of the oxide film.

Abstract: By providing a radiator configuration circuit and a feeding circuit each having a simple structure, a ground radiation antenna having a more simplified fabrication process as well as a remarkably reduced fabrication cost is provided herein. Additionally, a ground radiation antenna having an excellent radiation performance, even when one side of a mobile communication terminal is covered with a conductive substance, such as an LCD panel, is also provided herein.

Abstract: A semiconductor device and a method for fabricating the same are disclosed, which can prevent migration of copper (Cu) ion when forming a Through Silicon Via (TSV). The semiconductor device includes a through silicon via (TSV) formed to pass through a semiconductor substrate; an oxide film located at a lower sidewall of the TSV; and a first prevention film formed to cover an upper portion of the TSV, an upper sidewall of the TSV, and an upper surface of the oxide film.

Abstract: A phase change memory device includes a semiconductor substrate, a first conductive pattern formed on the semiconductor substrate, a second conductive pattern contacting an upper surface of the first conductive pattern and having a diameter less than a diameter of the first conductive pattern, and a phase change material layer contacting the second conductive pattern.

Abstract: A method for fabricating a semiconductor device includes forming an etch target layer over a substrate that includes a cell region and a peripheral region. A first hard mask layer, a second hard mask layer, and an anti-reflective coating layer are formed over the etch target layer. A photosensitive pattern is formed over the anti-reflective coating layer. The anti-reflective coating layer is etched to have a width smaller than the width of the photosensitive pattern. The second hard mask layer is etched. A main etching and an over-etching are performed on the first hard mask layer. The etch target layer is then etched.

Abstract: A method for manufacturing a phase change memory device, capable of improving reset current characteristics of a phase change layer by preventing thermal loss of the phase change layer. An interlayer dielectric layer having a lower electrode contact is formed on a semiconductor substrate. A phase change layer and an upper electrode layer are sequentially formed on the interlayer dielectric layer. Then, an upper electrode and a phase change pattern are formed by etching predetermined portions of the upper electrode layer and the phase change layer using an etching gas having chlorine gas.

Abstract: A method and apparatus for compensating tilt. The tilt compensation method includes: obtaining one of a jitter best, an RF envelope, and a focus DC offset (FODC) from a detection signal of the ROM data region and determining whether the obtained value is within a tolerance range; and obtaining an initial skew compensation value using the obtained value when the obtained value is within the tolerance, changing the magnitude of current applied to an actuator designed to perform driving in at least three-axis directions to drive an objective lens of an optical pickup assembly in a radial tilt direction when the obtained value is not within the tolerance range, and repeating the obtaining of one of the jitter best, the RF envelope, and the FODC and changing the magnitude of the current until the obtained value is within the tolerance range.

Abstract: A heat source having a device emitting heat, a case protecting and supporting the device, and a thermoelectric element absorbing the heat emitted from the device and dissipating the heat to an outside.

Abstract: A method for fabricating a dual polysilicon gate includes providing a substrate, forming a gate oxide layer over the substrate, forming a polysilicon layer over the gate oxide layer, patterning the polysilicon layer in a condition of applying a relatively low first pressure or a relatively high first bias power, thereby forming gate patterns and exposing a given portion of the gate oxide layer, and forming an oxide layer over the exposed given portion of the gate oxide layer by using a plasma oxidation process while performing an over-etch process on the gate patterns in a condition of applying a second pressure higher than the first pressure or a second bias power lower than the first bias power.

Abstract: A method for fabricating a semiconductor device includes: providing a substrate structure including a bit line and a capacitor formed apart from each other at a different level; forming first, second, and third insulation layers over the bit line, the second insulation layer being a first etch stop layer; forming a second etch stop layer over a top electrode of the capacitor; forming a fourth insulation layer over the third insulation layer and the second etch stop layer; and performing a plurality of etch steps to expose an upper surface of the bit line and an upper surface of the capacitor.

Abstract: A method for fabricating a semiconductor device includes forming an etch target layer over a substrate that includes a cell region and a peripheral region. A first hard mask layer, a second hard mask layer, and an anti-reflective coating layer are formed over the etch target layer. A photosensitive pattern is formed over the anti-reflective coating layer. The anti-reflective coating layer is etched to have a width smaller than the width of the photosensitive pattern. The second hard mask layer is etched. A main etching and an over-etching are performed on the first hard mask layer. The etch target layer is then etched.

Abstract: A method for fabricating a semiconductor device includes: providing a substrate structure including a bit line and a capacitor formed apart from each other at a different level; forming first, second, and third insulation layers over the bit line, the second insulation layer being a first etch stop layer; forming a second etch stop layer over a top electrode of the capacitor; forming a fourth insulation layer over the third insulation layer and the second etch stop layer; and performing a plurality of etch steps to expose an upper surface of the bit line and an upper surface of the capacitor.

Abstract: A compatible type optical pickup using a wedge type beam splitter that can record and/or reproduce information on/from optical recording media having different formats.

Abstract: A lens position determination apparatus of an optical pickup includes a lens holder with a mounted lens, a base supporting the lens holder, and a pressing member. The base has an accommodation surface accommodating the lens holder and a pair of facing support walls on the accommodation surface. The pressing member is a bendable arm. A first elastic portion between arm end portions applies an elastic force in a direction in which the arm end portions closely contact the support walls. A second elastic portion connected to the arm presses the lens holder toward the accommodation surface to fix the lens holder position. The lens adjustment can be performed while the pressing force to fix the lens holder to the base is removed by bending the pressing member into a V shape to reduce frictional resistance of the lens holder with the base during the adjustment.

Abstract: A method and apparatus for compensating tilt. The tilt compensation method includes: obtaining one of a jitter best, an RF envelope, and a focus DC offset (FODC) from a detection signal of the ROM data region and determining whether the obtained value is within a tolerance range; and obtaining an initial skew compensation value using the obtained value when the obtained value is within the tolerance, changing the magnitude of current applied to an actuator designed to perform driving in at least three-axis directions to drive an objective lens of an optical pickup assembly in a radial tilt direction when the obtained value is not within the tolerance range, and repeating the obtaining of one of the jitter best, the RF envelope, and the FODC and changing the magnitude of the current until the obtained value is within the tolerance range.

Abstract: A heat source having a device emitting heat, a case protecting and supporting the device, and a thermoelectric element absorbing the heat emitted from the device and dissipating the heat to an outside.

Abstract: A compatible type optical pickup using a wedge type beam splitter that can record and/or reproduce information on/from optical recording media having different formats.

Abstract: A harmonic wave generator including a light source to generate a fundamental wave having a predetermined wavelength, a non-linear material to transform at least a portion of the fundamental wave generated by the light source into a harmonic wave having a shorter wavelength than the fundamental wave, and a first optical device to separate the harmonic wave generated by the non-linear material from the fundamental wave. The harmonic wave generator further includes a second optical device between the condensing lens and the non-linear material to adjust the depth of the focus of light. The harmonic wave generator is easily assembled and can be manufactured at a low cost. A harmonic wave having high power can be generated.

Abstract: In a method and system for forming light beams onto a disc for a plurality of disc formats, a main beam is directed onto the disc. A side beam is directed onto the disc with a displacement from the main beam, with the displacement being a LCM (least common multiple) distance of respective track pitches for the plurality of disc formats. A tracking servo uses such main and side beams with stable operation for the plurality of disc formats.

Abstract: An optical pickup apparatus in which an arrangement and adjustment of optical elements is easy. The optical pickup apparatus includes a light source to emit laser light; a beam splitter to change the travel path of incident light; an objective lens to condense light passed through the beam splitter to form a light spot on an optical recording medium; and a photodetector to receive light reflected from the optical recording medium and then passed through the beam splitter to detect an information signal and an error signal. The optical pickup apparatus further includes a grating for diffraction-transmitting incident light; a wavelength plate to change polarization characteristic of incident light; and an optical output compensating lens to compensate output of light incident from the light source. The grating, the wavelength plate, and the optical output compensating lens are disposed on an optical path between the light source and the beam splitter.