Patents by Inventor Dong-Ryul Jeon

Dong-Ryul Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6652762
    Abstract: A method for fabricating a nano-sized diamond whisker includes the steps of depositing a diamond film on a substrate, forming a nano-sized mask pattern on the deposited diamond film, and etching the diamond film by using the nano-sized pattern as an etching mask. The nano-sized diamond whisker can be used as a new field emission cold cathode device, thereby advancing a practical use of a field emission device having high performance, and can also be applied to various fields such as a new composite material and a mechanical device.
    Type: Grant
    Filed: October 5, 1999
    Date of Patent: November 25, 2003
    Assignee: Korea Institute of Science and Technology
    Inventors: Young Joon Baik, Eun Song Baik, Dong Ryul Jeon
  • Publication number: 20030052080
    Abstract: A method for fabricating a nano-sized diamond whisker includes the steps of depositing a diamond film on a substrate, forming a nano-sized mask pattern on the deposited diamond film, and etching the diamond film by using the nano-sized pattern as an etching mask. The nano-sized diamond whisker can be used as a new field emission cold cathode device, thereby advancing a practical use of a field emission device having high performance, and can also be applied to various fields such as a new composite material and a mechanical device.
    Type: Application
    Filed: October 5, 1999
    Publication date: March 20, 2003
    Inventors: YOUNG JOON BAIK, EUN SONG BAIK, DONG RYUL JEON
  • Patent number: 6379568
    Abstract: A diamond field emitter and a fabrication method thereof, in which a pretreatment is performed on a surface of an Si substrate in order that diamond nuclei are uniformly formed on the Si substrate during a diamond deposition, an oxide film such as an SiO2 film is deposited on the pretreated surface of the Si substrate and removed after an etching process so that diamond powder can be selectively remained during the etching process, thus the effect of the surface pretreatment of the Si substrate remains in the selected portion during the etching process, and it is also possible to uniformly deposit the diamond in said portion. According to the present invention, the diamond field emitter having excellent and uniform field emission characteristic can be manufactured because the field emission is easily achieved at a tip shaped field emission section, and, moreover, the diamond placed on an upper end portion of the tip increases electron emission effect.
    Type: Grant
    Filed: May 15, 2000
    Date of Patent: April 30, 2002
    Assignee: Korea Institute of Science and Technology
    Inventors: Young-Joon Baik, Joo-Yong Lee, Dong-Ryul Jeon