Publication number: 20050087758
Abstract: Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.
Type:
Application
Filed:
September 30, 2004
Publication date:
April 28, 2005
Applicants:
Samsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
Inventors:
Joon-seop Kwak, Tae-yeon Seong, Ok-hyun Nam, June-o Song, Dong-seok Leem
Publication number: 20050006229
Abstract: A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.
Type:
Application
Filed:
July 9, 2004
Publication date:
January 13, 2005
Applicants:
Samsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
Inventors:
Dong-seok Leem, June-o Song, Sang-ho Kim, Tae-yeon Seong