Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer including the compound represented by Chemical Formula 1 between the first electrode and the second electrode.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as described in the detailed description.

Abstract: An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor.

Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.

Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein each nanopattern of the plurality of nanopatterns correspond one to one with a single photo-sensing device of the plurality of photo-sensing devices, respectively.

Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.

Abstract: An image sensor may include an organic photo-sensing device configured to selectively sense first visible light and a photo-sensing device array including a first photo-sensing device configured to selectively sense second visible light, a second photo-sensing device configured to selectively sense third visible light, and a third photo-sensing device configured to selectively sense mixed light of the second visible light and the third visible light. The image sensor may include a color filter array including a first color filter configured to selectively transmit the second visible light, a second color filter configured to selectively transmit the third visible light, and a third color filter configured to transmit mixed light of the second visible light and the third visible light. At least the first photo-sensing device and the second photo-sensing device may be at different depths in a substrate and may be laterally offset from each other.

Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including an n-type semiconductor compound represented by Chemical Formula 1 and a p-type semiconductor compound having selective light absorption in a green wavelength region of about 500 nm to about 600 nm.

Abstract: A compound is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device include the compound. In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: A compound may be represented by Chemical Formula 1, an organic photoelectronic device may include a first electrode and a second electrode facing each other with an active layer that includes the compound represented by Chemical Formula 1 between the first electrode and the second electrode, and an image sensor may include the organic photoelectronic device.

Abstract: A photoelectric device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and including a light absorbing material configured to selectively absorb first visible light including one of visible light in a blue wavelength region of greater than or equal to about 380 nm and less than about 500 nm, visible light in a green wavelength region of about 500 nm to about 600 nm, and visible light in a red wavelength region of greater than about 600 nm and less than or equal to about 700 nm, and a plurality of nanostructures between the first electrode and the photoelectric conversion layer and configured to selectively reflect the first visible light.

Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor and an electronic device include the same.

Abstract: A compound is represented by Chemical Formula 1: X1-T-X2 wherein T is a substituted or unsubstituted fused thiophene moiety, and each of X1 and X2 are independently an organic group including an alkenylene group and an electron withdrawing group.

Abstract: A compound may be represented by Chemical Formula 1, an organic photoelectronic device may include a first electrode and a second electrode facing each other with an active layer that includes the compound represented by Chemical Formula 1 between the first electrode and the second electrode, and an image sensor may include the organic photoelectronic device.

Abstract: A compound is represented by Chemical Formula 1, an organic photoelectric device includes a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode and including the compound represented by Chemical Formula 1, and an image sensor and an electronic device include the organic photoelectric device.

Abstract: An image sensor includes a semiconductor substrate integrated with at least a photo-sensing device, a plurality of first electrodes disposed on the semiconductor substrate, an organic photoelectric conversion layer disposed on the first electrodes, and a second electrode disposed on the organic photoelectric conversion layer. The first electrodes include a light-transmitting electrode and a metal layer interposed between the semiconductor substrate and the light-transmitting electrode. The organic photoelectric conversion layer disposed on the first electrodes and the photo-sensing device absorb and/or sense light in different wavelength regions from each other. An electronic device including the image sensor is also provided.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.