Patents by Inventor Dong Seok Shin

Dong Seok Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7091287
    Abstract: The present invention relates to a nanopore-forming material for forming an insulating film for a semiconductor device, and more particularly to a nanopore-forming organic material containing a triazine functional group and preparation thereof, and a composition for forming an insulating film for a semiconductor device comprising the same, an insulating film using the same, and a manufacturing process thereof. The pore-forming material of the present invention is easy to synthesize, and the molecular weight, molecular structure, and microenvironment thereof are easy to control, and thus it is suitable for a nanopore-forming material.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: August 15, 2006
    Assignee: LG Chem, Ltd.
    Inventors: Won-Jong Kwon, Min-Jin Ko, Gwi-Gwon Kang, Dong-Seok Shin, Myung-Sun Moon, Jung-Won Kang, Hae-Young Nam, Young-Duk Kim, Bum-Gyu Choi
  • Publication number: 20060127587
    Abstract: The present invention relates to a composition for forming a low dielectric insulating film for a semiconductor device, particularly to an organosilicate polymer prepared by mixing a thermally decomposable organic silane compound that is capped with a silane compound at both its ends, and a common silane compound or silane oligomer, and then adding water and a catalyst to conduct hydrolysis and condensation, as well as to a coating composition for an insulating film for a semiconductor device comprising the same, a coating composition for an insulating film for a semiconductor device further comprising a pore-forming organic substance, a method for preparing an insulating film for a semiconductor device by coating the composition and curing, and a semiconductor device comprising a low dielectric insulating film prepared by the method.
    Type: Application
    Filed: June 27, 2003
    Publication date: June 15, 2006
    Inventors: Jung-won Kang, Myung-Sun Moon, Min-Jin Ko, Gwi-Gwon Kang, Dong-Seok Shin, Hye-Yeong Nam, Young-Duk Kim, Bum-Gyu Choi, Byung-Ro Kim, Sang-Min Park
  • Publication number: 20050266699
    Abstract: Provided is a process for manufacturing an insulating film for a semiconductor device. The process includes preparing a composition for forming an insulating film, wherein the composition comprises a) an organosilicate polymer and b) an organic solvent. The composition is coated on a substrate of a semiconductor device to prepare a coated insulating film, and the coated insulated film is dried and cured. Also provided are an insulating film prepared as described as well as a semiconductor device comprising the insulating film.
    Type: Application
    Filed: July 5, 2005
    Publication date: December 1, 2005
    Inventors: Min-Jin Ko, Bum-Gyu Choi, Dong-Seok Shin, Myung-Sun Moon, Jung-Won Kang, Hae-Young Nam, Young-Duk Kim, Gwi-Gwon Kang
  • Patent number: 6933360
    Abstract: The present invention relates to a low dielectric substance essential for a next generating electrical device such as a semiconductor device having high performance and high density, and particularly to a process for preparing a low dielectric organosilicate polymer, a hydrolysis condensation product of a carbon-bridged oligomer; a process for manufacturing an insulating film using an organosilicate polymer prepared by the process; and an electrical device comprising an insulating film prepared by the process. The organosilicate polymer prepared according the process of the present invention is thermally stable, and has good film-forming prosperities, excellent mechanical strength and crack resistance, and the film manufactured therefrom has excellent insulating properties, film uniformity, dielectric properties, crack resistance, and mechanical strength.
    Type: Grant
    Filed: May 13, 2002
    Date of Patent: August 23, 2005
    Assignee: LG Chem, Ltd.
    Inventors: Min-Jin Ko, Bum-Gyu Choi, Dong-Seok Shin, Myung-Sun Moon, Jung-Won Kang, Hae-Young Nam, Young-Duk Kim, Gwi-Gwon Kang
  • Patent number: 6907418
    Abstract: An advertisement servicing system using an e-mail arrival notifying program is provided.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: June 14, 2005
    Assignees: Metabiz Co., Ltd., Hoseo University
    Inventors: Dong Seok Shin, Young Goo Kang
  • Patent number: 6806161
    Abstract: The present invention relates to low dielectric materials essential for a semiconductor having high density and high performance of the next generation, particularly to a process for preparing a porous interlayer insulating film having low dielectric constant containing pores with a size of a few nanometers or less. The present invention provides a process for preparing a porous wiring interlayer insulating film having very low dielectric constant for a semiconductor device comprising the steps of a) preparing a mixed complex of pore-forming organic molecules and a matrix resin, b) coating the mixed complex on a substrate, and c) heating the mixed complex to remove the organic molecules therefrom, thereby forming pores inside the complex.
    Type: Grant
    Filed: April 27, 2001
    Date of Patent: October 19, 2004
    Assignee: LG Chem Investment, Ltd.
    Inventors: Min-Jin Ko, Hye-Yeong Nam, Dong-Seok Shin, Myung-Sun Moon, Jung-Won Kang
  • Patent number: 6743471
    Abstract: The present invention relates to low dielectric materials essential for a semiconductor having high density and high performance of the next generation, particularly to a process for preparing a porous interlayer insulating film having low dielectric constant containing pores with a size of a few nanometers or less. The present invention provides a process for preparing a porous wiring interlayer insulating film having very low dielectric constant for a semiconductor device comprising the steps of a) preparing a mixed complex of pore-forming organic molecules and a matrix resin, b) coating the mixed complex on a substrate, and c) heating the mixed complex to remove the organic molecules therefrom, thereby forming pores inside the complex.
    Type: Grant
    Filed: May 28, 2003
    Date of Patent: June 1, 2004
    Assignee: LG Chem Investment, Ltd.
    Inventors: Min-Jin Ko, Hye-Yeong Nam, Dong-Seok Shin, Myung-Sun Moon, Jung-Won Kang
  • Publication number: 20040038048
    Abstract: The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film.
    Type: Application
    Filed: August 28, 2003
    Publication date: February 26, 2004
    Applicant: LG Chemical Ltd.
    Inventors: Min-Jin Ko, Hye-Yeong Nam, Jung-Won Kang, Myung-Sun Moon, Dong-Seok Shin
  • Patent number: 6696538
    Abstract: The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film. The present invention provides an organic silicate polymer having a flexible organic bridge unit in the network prepared by the resin composition of the component (a) and the component (b).
    Type: Grant
    Filed: February 2, 2001
    Date of Patent: February 24, 2004
    Assignee: LG Chemical Ltd.
    Inventors: Min-Jin Ko, Hye-Yeong Nam, Jung-Won Kang, Myung-Sun Moon, Dong-Seok Shin
  • Publication number: 20030216058
    Abstract: The present invention relates to low dielectric materials essential for a semiconductor having high density and high performance of the next generation, particularly to a process for preparing a porous interlayer insulating film having low dielectric constant containing pores with a size of a few nanometers or less.
    Type: Application
    Filed: May 28, 2003
    Publication date: November 20, 2003
    Applicant: LG Chem Investment, Ltd., a Korea corporation
    Inventors: Min-Jin Ko, Hye-Yeong Nam, Dong-Seok Shin, Myung-Sun Moon, Jung-Won Kang
  • Patent number: 6633665
    Abstract: This invention provides a method to transform 3D object points onto 2D image points for linear pushbroom images. The problem is decomposed to the problem of finding sensor line coordinates and the problem of finding sensor column coordinates from linear pushbroom collinearity equations. The procedures to solve the problem are as follows. First, assume an initial value for image line coordinate to be sought for and using this value, calculate the sensor attitude. Next, assume the sensor attitude is constant and calculate a new image line coordinate satisfying linear pushbroom collinearity equations. Next, update the initial value with the image line coordinate calculated and continue the procedures until the difference between an initial value and a new value calculated becomes smaller than a threshold. If the different between an initial value and calculated value is smaller than a threshold, accept the calculated value as the sensor line coordinate.
    Type: Grant
    Filed: August 29, 2000
    Date of Patent: October 14, 2003
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Tae Jung Kim, Dong Seok Shin, Tag Gon Kim
  • Publication number: 20030191269
    Abstract: The present invention relates to a low dielectric material essential for a next generation electric device such as a semiconductor device, with a high density and high performance. In detail, the present invention provides: a process for preparing an organic silicate polymer comprising a polymerization step in the absence of homogenizing organic solvents, of mixing and reacting organic silane compounds with water in the presence of a catalyst to hydrolyze and condense the silane compounds, that is thermally stable and has good mechanical and crack resistance properties; and a coating composition for forming a low dielectric insulating film; and a process for preparing a low dielectric insulating film using the organic silicate polymer prepared according to the process, and an electric device comprising the low dielectric insulating film prepared according to the process.
    Type: Application
    Filed: March 18, 2003
    Publication date: October 9, 2003
    Inventors: Min-Jin Ko, Myung-Sun Moon, Dong-Seok Shin, Jung-Won Kang, Hye-Yeong Nam
  • Publication number: 20030181750
    Abstract: The present invention relates to a low dielectric substance essential for a next generating electrical device such as a semiconductor device having high performance and high density, and particularly to a process for preparing a low dielectric organosilicate polymer, a hydrolysis condensation product of a carbon-bridged oligomer; a process for manufacturing an insulating film using an organosilicate polymer prepared by the process; and an electrical device comprising an insulating film prepared by the process The organosilicate polymer prepared according the process of the present invention is thermally stable, and has good film-forming properties, excellent mechanical strength and crack resistance, and the film manufactured therefrom has excellent insulating properties, film uniformity, dielectric properties, crack resistance, and mechanical strength.
    Type: Application
    Filed: January 9, 2003
    Publication date: September 25, 2003
    Inventors: Min-Jin Ko, Bum-Gyu Choi, Dong-Seok Shin, Myung-Sun Moon, Jung-Won Kang, Hae-Young Nam, Young-Duk Kim, Gwi-Gwon Kang
  • Publication number: 20020083140
    Abstract: An advertisement servicing system using an e-mail arrival notifying program is provided.
    Type: Application
    Filed: April 12, 2001
    Publication date: June 27, 2002
    Inventors: Dong Seok Shin, Young Goo Kang
  • Publication number: 20010055891
    Abstract: The present invention relates to low dielectric materials essential for a semiconductor having high density and high performance of the next generation, particularly to a process for preparing a porous interlayer insulating film having low dielectric constant containing pores with a size of a few nanometers or less.
    Type: Application
    Filed: April 27, 2001
    Publication date: December 27, 2001
    Inventors: Min-Jin Ko, Hye-Yeong Nam, Dong-Seok Shin, Myung-Sun Moon, Jung-Won Kang
  • Publication number: 20010053840
    Abstract: The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film.
    Type: Application
    Filed: February 2, 2001
    Publication date: December 20, 2001
    Inventors: Min-Jin Ko, Hye-Yeong Nam, Jung-Won Kang, Myung-Sun Moon, Dong-Seok Shin