Patents by Inventor Dong-Seon Lee
Dong-Seon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150028356Abstract: Disclosed herein is a light emitting diode having a multi-junction structure and a method of fabricating the same. In the light emitting diode, each light emitting structure has a column shape and includes two light emitting layers centered on a p-type semiconductor layer. In addition, a p-type electrode is formed on a side surface of the p-type semiconductor layer, and a p-type electrode is formed through formation and removal of a sacrificial layer. Through this process, the p-type electrode can be formed as a side electrode.Type: ApplicationFiled: July 25, 2014Publication date: January 29, 2015Inventors: Dong-Seon LEE, Dukjo KONG, Chang Mo KANG
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Publication number: 20140367634Abstract: Disclosed are a nitride-based light emitting diode (LED) and a method of manufacturing the same. The LED includes an n-type nitride semiconductor layer formed on a substrate, a plurality of n-type nitride semiconductor nanorods formed on the n-type nitride semiconductor layer and each having a non-polar face on a major surface thereof, a photoactive layer formed on the n-type nitride semiconductor layer and surfaces of the n-type nitride semiconductor nanorods, a p-type nitride semiconductor layer formed in a hexagonal pyramid shape on the photoactive layer, a current spreading layer formed on the p-type nitride semiconductor layer, an anode formed on the current spreading layer, and a cathode formed on an exposed surface of the n-type nitride semiconductor layer.Type: ApplicationFiled: November 15, 2013Publication date: December 18, 2014Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Dong-Seon LEE, Dukjo KONG, Si Young BAE
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Patent number: 8779411Abstract: The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode includes a graphene layer on a second conductive semiconductor layer and a plurality of metal nanoparticles formed on some region of the graphene layer, whereby adhesion between the second conductive semiconductor layer comprised of an inorganic material and the graphene layer is enhanced, thereby securing stability and reliability of the light emitting diode. In addition, the light emitting diode allows uniform spreading of electric current, thereby allowing stable emission of light through a surface area of the light emitting diode.Type: GrantFiled: November 16, 2012Date of Patent: July 15, 2014Assignee: Gwanju Institute of Science and TechnologyInventors: Dong Seon Lee, Jae Phil Shim, Seong Ju Park, Min Hyeok Choe, Do Hyung Kim, Tak Hee Lee
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Publication number: 20140183579Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: ApplicationFiled: January 2, 2013Publication date: July 3, 2014Applicants: Japan Science and Technology Agency, The Regents of the University of CaliforniaInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Patent number: 8682657Abstract: An apparatus and a method for improving communication sound quality in a mobile terminal in order to remove a neighboring noise that occurs together with a user's voice signal in a mobile terminal by discriminating signals occurring at different distances using two microphones and removing a noise. The mobile terminal preferably includes a first microphone, a second microphone, and a voice processor. The first microphone receives a voice signal occurring at a closer distance from the mobile terminal and a voice signal occurring at a longer distance from the mobile terminal. The second microphone receives only a voice signal occurring at the long distance. The voice processor discriminates between the signal occurring at the long distance and the signal occurring at the close distance by receiving voice signals received via the first microphone and the second microphone at different phases.Type: GrantFiled: May 13, 2011Date of Patent: March 25, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Ji-Hyuk Lim, Jang-Young Ryu, Dong-Seon Lee
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Publication number: 20140000689Abstract: Disclosed herein are a nitride semiconductor-based solar cell including a photoactive layer having a wide area for incident light and a manufacturing method thereof. Opening parts are formed in a mask layer partially shielding a first n-type nitride semiconductor layer. The first n-type nitride semiconductor layer is exposed through the opening part, and second n-type nitride semiconductor layers are grown based on the exposed first n-type nitride semiconductor layer. The grown second n-type nitride semiconductor layer is buried in the opening part and is formed in a hexagonal pyramid shape. In addition, a photoactive layer and a p-type nitride semiconductor layer are sequentially formed along the second n-type nitride semiconductor layer. Therefore, a hole injection-electron pair is easily formed by the incident light. Further, an area of the photoactive layer is increased, such that photoelectric conversion efficiency is improved.Type: ApplicationFiled: May 17, 2011Publication date: January 2, 2014Inventors: Dong Seon Lee, Si Young Bae, Do Hyung Kim, Jong Hyeob Baek, Seung-Jae Lee
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Publication number: 20130285012Abstract: The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode includes a graphene layer on a second conductive semiconductor layer and a plurality of metal nanoparticles formed on some region of the graphene layer, whereby adhesion between the second conductive semiconductor layer comprised of an inorganic material and the graphene layer is enhanced, thereby securing stability and reliability of the light emitting diode. In addition, the light emitting diode allows uniform spreading of electric current, thereby allowing stable emission of light through a surface area of the light emitting diode.Type: ApplicationFiled: November 16, 2012Publication date: October 31, 2013Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Dong Seon LEE, Jae Phil SHIM, Seong Ju PARK, Min Hyeok CHOE, Do Hyung KIM, Tak Hee LEE
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Patent number: 8368179Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: GrantFiled: December 6, 2011Date of Patent: February 5, 2013Assignees: The Regents of the University of California, Japan Science and Technology AgencyInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20120074525Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: ApplicationFiled: December 6, 2011Publication date: March 29, 2012Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Patent number: 8110482Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: GrantFiled: February 22, 2010Date of Patent: February 7, 2012Assignees: The Regents of the University of California, Japan Science and Technology AgencyInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20110282659Abstract: An apparatus and a method for improving communication sound quality in a mobile terminal in order to remove a neighboring noise that occurs together with a user's voice signal in a mobile terminal by discriminating signals occurring at different distances using two microphones and removing a noise. The mobile terminal preferably includes a first microphone, a second microphone, and a voice processor. The first microphone receives a voice signal occurring at a closer distance from the mobile terminal and a voice signal occurring at a longer distance from the mobile terminal. The second microphone receives only a voice signal occurring at the long distance. The voice processor discriminates between the signal occurring at the long distance and the signal occurring at the close distance by receiving voice signals received via the first microphone and the second microphone at different phases.Type: ApplicationFiled: May 13, 2011Publication date: November 17, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji-Hyuk LIM, Jang-Young RYU, Dong-Seon LEE
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Publication number: 20100148195Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: ApplicationFiled: February 22, 2010Publication date: June 17, 2010Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hiroshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Patent number: 7691658Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1?xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1?xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: GrantFiled: January 19, 2007Date of Patent: April 6, 2010Assignees: The Regents of the University of California, Japan Science and Technology AgencyInventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Patent number: 7649195Abstract: Disclosed is a light emitting diode (LED) having an active region of a multiple quantum well structure in which well layers and barrier layers are alternately laminated between a GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer. The LED includes a middle barrier layer having a bandgap relatively wider than the first barrier layer adjacent to the N-type compound semiconductor layer and the n-th barrier layer adjacent to the P-type compound semiconductor layer. The middle barrier layer is positioned between the first and n-th barrier layers. Accordingly, positions at which electrons and holes are combined in the multiple quantum well structure to emit light can be controlled, and luminous efficiency can be enhanced. Furthermore, an LED is provided with enhanced luminous efficiency using a bandgap engineering or impurity doping technique.Type: GrantFiled: June 12, 2008Date of Patent: January 19, 2010Assignee: Seoul Opto Device Co., Ltd.Inventors: Dong Seon Lee, Gyu Beom Kim
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Patent number: 7626209Abstract: Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.Type: GrantFiled: October 30, 2008Date of Patent: December 1, 2009Assignee: Seoul Opto Device Co., Ltd.Inventors: Dong Seon Lee, Eu Jin Hwang
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Publication number: 20090152586Abstract: Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.Type: ApplicationFiled: October 30, 2008Publication date: June 18, 2009Applicant: Seoul Opto Device Co., Ltd.Inventors: Dong Seon Lee, Eu Jin Hwang
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Publication number: 20080308787Abstract: Disclosed is a light emitting diode (LED) having an active region of a multiple quantum well structure in which well layers and barrier layers are alternately laminated between a GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer. The LED includes a middle barrier layer having a bandgap relatively wider than the first barrier layer adjacent to the N-type compound semiconductor layer and the n-th barrier layer adjacent to the P-type compound semiconductor layer. The middle barrier layer is positioned between the first and n-th barrier layers. Accordingly, positions at which electrons and holes are combined in the multiple quantum well structure to emit light can be controlled, and luminous efficiency can be enhanced. Furthermore, an LED is provided with enhanced luminous efficiency using a bandgap engineering or impurity doping technique.Type: ApplicationFiled: June 12, 2008Publication date: December 18, 2008Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Dong Seon LEE, Gyu Beom KIM
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Publication number: 20080237570Abstract: A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.Type: ApplicationFiled: March 28, 2008Publication date: October 2, 2008Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Joo Won CHOI, Dong Seon LEE, Gyu Beom KIM, Sang Joon LEE
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Publication number: 20070218703Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.Type: ApplicationFiled: January 19, 2007Publication date: September 20, 2007Inventors: John Kaeding, Dong-Seon Lee, Michael Iza, Troy Baker, Hitoshi Sato, Benjamin Haskell, James Speck, Steven DenBaars, Shuji Nakamura
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Patent number: 6972516Abstract: An electroluminescent device in which the intensity of the light emission is enhanced by photopumping with radiation from a radiation source of a suitable photon energy. The photopumping radiation from the radiation source interacts with the wide band-gap semiconductor forming the electroluminescent device so as to, when the device is electrically biased to provide light emission, generate additional carriers that enhance the intensity of the light emission from a light-emitting element present in the wide band-gap semiconductor. A waveguide structure may be integrated into a substrate carrying the electroluminescent device for transferring the radiation from the radiation source to the electroluminescent device. Multiple electroluminescent devices may be arranged in pixels for forming a flat panel display in which certain of the devices are photopumped with radiation.Type: GrantFiled: June 14, 2002Date of Patent: December 6, 2005Assignee: University of CincinnatiInventors: Andrew J. Steckl, Dong-Seon Lee