Patents by Inventor Dong-Seon Min

Dong-Seon Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5818212
    Abstract: A reference voltage generating circuit of a semiconductor memory device including a reference voltage circuit for producing a constant voltage, a differential amplifier for receiving the constant voltage as one input, a MOS transistor with the gate connected to the output of the differential amplifier and with the channel connected between a power supply terminal and a reference voltage output terminal and a voltage divider with an input and output respectively connected to the reference voltage output terminal and the other input of the differential amplifier, is disclosed. The voltage divider has a MOS transistor connected between the reference voltage output terminal and the output and a resistor connected between the output and ground voltage terminal, the MOS transistor being operated in saturation region.
    Type: Grant
    Filed: April 11, 1991
    Date of Patent: October 6, 1998
    Assignee: SamSung Electronics Co., Ltd.
    Inventors: Dong-Seon Min, Dong-Soo Jeon
  • Patent number: 5319605
    Abstract: An arrangement of a word line driver stage for semiconductor memory device is disclosed. The present invention is characterized in that a word line driver stages are into several sub-stages WD11-WD51 within a memory cell array, and each word line extending from a first one or a second one of the sub-stages is alternatively coupled to the sub-stage adjacent thereto. Thus this arrangement is capable of reducing the signal transmission delay and eliminating the adverse factor in the current critical design rule and layout.
    Type: Grant
    Filed: July 5, 1991
    Date of Patent: June 7, 1994
    Assignee: SamSung Electronics Co., Ltd.
    Inventors: Dong-Seon Min, Kyoung-Yeol Min, Dong-Su Jeon, Yong-Sik Seok
  • Patent number: 5159415
    Abstract: A method for making a sense amplifier capable of achieving high-speed sensing operation as well as incurring less influence from electrostatic capacitance of bit lines in a high-integration semiconductor memory (DRAM) device is disclosed. The DRAM device includes a plurality of word line pairs and bit line pairs, and a plurality of memory cell arrays with a plurality of memory cells, and further includes discrete sense amplifier circuits connected to each of the memory cell arrays, common sense amplifier circuits coupled between the discrete sense amplifiers, and separation circuits controlled by a given control signal and connected between the discrete sense amplifier circuits and common sense amplifier circuits.
    Type: Grant
    Filed: December 24, 1990
    Date of Patent: October 27, 1992
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Dong-Seon Min