Patents by Inventor Dong-Seop Kim
Dong-Seop Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11959202Abstract: Provided are an apparatus for manufacturing a textile grid with increased adhesion and a method thereof capable of integrating the textile grid with a concrete structure by increasing the adhesion of the textile grid when the concrete structure is built, repaired, or reinforced, increasing structural safety and durability of the concrete structure, increasing a working speed by coating a surface of the textile grid with an abrasive material powder that is a surface coating material in an automatic series of processes immediately after the textile grid is manufactured, and increasing coating performance by automatically inspecting and adjusting the amount of the coating material applied to the surface of the textile grid using a camera.Type: GrantFiled: November 27, 2019Date of Patent: April 16, 2024Assignee: KOREA INSTITUTE OF CIVIL ENGINEERING AND BUILDING TECHNOLOGYInventors: Hyeong Yeol Kim, Kyung Taek Koh, Gum Sung Ryu, Gi Hong An, Dong Woo Seo, Seung Seop Jin
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Publication number: 20240100719Abstract: A gripper includes a body part, a finger base part coupled to the body part, and a finger part coupled to a first side of the body part or the finger base part and coupled to the body part or the finger base part to be reciprocal, wherein the finger part comprises a first link structure and a second link structure, sides of which are coupled to the finger base part, respectively, and wherein, in the first link structure and the second link structure, a first support area of the first link structure and a second support area of the second link structure reciprocate in only one of a plurality of directions that cross a direction in which the finger part reciprocates with respect to the finger base part.Type: ApplicationFiled: February 6, 2023Publication date: March 28, 2024Inventors: Beom Su Kim, Hyun Seop Lim, Ju Young Yoon, Kyu Jung Kim, Hyo Joong Kim, Seong Taek Hwang, Ho Jun Kim, Dong Jin Hyun, Min Woong Jeung
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Publication number: 20240100690Abstract: A gripper includes a body part, a finger base part coupled to the body part to be rotatable, the finger base part including a first finger base part and a second finger base part configured such that when the first finger base part is rotated in a first direction with respect to the body part, the second finger base part is provided to be rotatable in a second direction opposite the first direction with respect to the body part, and a finger part coupled to a first side of the body part or the finger base part to be reciprocal.Type: ApplicationFiled: February 6, 2023Publication date: March 28, 2024Inventors: Beom Su Kim, Hyun Seop Lim, Ju Young Yoon, Kyu Jung Kim, Hyo-Joong Kim, Seong Taek Hwang, Ho Jun Kim, Dong Jin Hyun, Min Woong Jeung
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Publication number: 20240099095Abstract: A display device including a base layer, a circuit layer, a light emitting device layer, an organic layer, and a touch sensing unit. The base layer includes a display area and a non-display area. A plurality of insulation patterns overlaps the non-display area. The organic layer is disposed on the light emitting device and overlaps the plurality of insulation patterns and the organic light emitting diode. At least a portion of the plurality of touch signal lines overlaps the plurality of insulation patterns.Type: ApplicationFiled: November 27, 2023Publication date: March 21, 2024Inventors: Se-ho KIM, Wonkyu Kwak, Ji-eun Lee, Yohan Kim, Dong-Seop Park, Kwangsik Lee, Jaesun Lee, Sungho Cho
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Publication number: 20160276506Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.Type: ApplicationFiled: March 21, 2016Publication date: September 22, 2016Inventors: Min-Seok OH, Doo-Youl LEE, Young-Jin KIM, Min PARK, Yun-Seok LEE, Nam-Kyu SONG, Dong-Seop KIM, Cho-Young LEE, Chan-Bin MO, Young-Su KIM, Hoon-Ha JEON, Yeon-Ik JANG, Jun-Ki HONG, Young-Sang PARK, Chan-Yoon JUNG
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Patent number: 9412895Abstract: A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted. According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.Type: GrantFiled: September 12, 2012Date of Patent: August 9, 2016Assignee: Samsung SDI Co., Ltd.Inventors: Young-Jin Kim, Doo-Youl Lee, Young-Su Kim, Chan-Bin Mo, Young-Sang Park, Jae-Ho Shin, Sang-Jin Park, Sang-Won Seo, Min-Chul Song, Dong-Seop Kim
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Patent number: 9293614Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.Type: GrantFiled: August 3, 2012Date of Patent: March 22, 2016Assignee: Intellectual Keystone Technology LLCInventors: Min-Seok Oh, Doo-Youl Lee, Young-Jin Kim, Min Park, Yun-Seok Lee, Nam-Kyu Song, Dong-Seop Kim, Cho-Young Lee, Chan-Bin Mo, Young-Su Kim, Hoon-Ha Jeon, Yeon-Ik Jang, Jun-Ki Hong, Young-Sang Park, Chan-Yoon Jung
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Patent number: 8969713Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.Type: GrantFiled: January 27, 2012Date of Patent: March 3, 2015Assignee: Samsung SDI Co., Ltd.Inventors: Min-Seok Oh, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim
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Patent number: 8950362Abstract: An otter habitation section, an overland section, an inclined-surface section, a first spawning section, a second spawning section and a roost are all provided. Accordingly, otters and birds can sufficiently obtain preys, and fishes secure a spawning ground suitable for spawning characteristics. Therefore, the otters, the fishes and the birds can inhabit together. Further, since frames are made of wood for providing buoyant force or the frames are made of stainless steel for reinforcing strength and wood for providing buoyant force, a small amount of polyethylene foam is required. Accordingly, it is possible to obtain floating wetland equipment with a simple structure. Furthermore, the wooden frames itself provide a spawning ground of fishes.Type: GrantFiled: April 6, 2012Date of Patent: February 10, 2015Assignees: Kangwon National University University-Industry Cooperation Foundation, Korea Water Resources Corporation, Halla Engineering & Construction Corp.Inventors: Woo Myung Heo, Gil Son Hwang, Dong Oug Kim, Ho Joon Kim, Dong Seop Kim, Sun Hee Lee, Haeng Seop Song
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Patent number: 8916767Abstract: A solar cell and a method of fabricating the same are provided according to one or more embodiments. According to an embodiment, the solar cell includes a substrate, a back electrode layer formed on the substrate, a light absorbing layer formed on the back electrode layer, and a transparent electrode layer formed on the light absorbing layer, wherein the light absorbing layer is comprised of copper (Cu), gallium (Ga), indium (In), sulfur (S), and selenium (Se) and includes a first concentration region in which concentrations of sulfur (S) gradually decrease in the light absorbing layer going in a first direction from the back electrode layer to the transparent electrode layer.Type: GrantFiled: December 10, 2009Date of Patent: December 23, 2014Assignees: Samsung SDI Co., Ltd., Samsung Display Co., Ltd.Inventors: Gug-Il Jun, Woo-Su Lee, Dong-Seop Kim, Jin-Seock Kim, Byoung-Dong Kim, Kang-Hee Lee, Dong-Gi Ahn, Byung-Joo Lee, Hyoung-Jin Park, In-Ki Kim
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Patent number: 8889981Abstract: A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.Type: GrantFiled: March 20, 2012Date of Patent: November 18, 2014Assignee: Samsung SDI Co., Ltd.Inventors: Doo-Youl Lee, Young-Jin Kim, Dong-Seop Kim, Chan-Bin Mo, Young-Su Kim, Young-Sang Park
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Publication number: 20140251225Abstract: An otter habitation section, an overland section, an inclined-surface section, a first spawning section, a second spawning section and a roost are all provided. Accordingly, otters and birds can sufficiently obtain preys, and fishes secure a spawning ground suitable for spawning characteristics. Therefore, the otters, the fishes and the birds can inhabit together. Further, since frames are made of wood for providing buoyant force or the frames are made of stainless steel for reinforcing strength and wood for providing buoyant force, a small amount of polyethylene foam is required. Accordingly, it is possible to obtain floating wetland equipment with a simple structure. Furthermore, the wooden frames itself provide a spawning ground of fishes.Type: ApplicationFiled: April 6, 2012Publication date: September 11, 2014Applicants: KANGWON NATIONAL UNIVERSITY UNIVERSITY-INDUSTRY COOPERATION FOUNDATION, KOREA WATER RESOURCES CORPORATION, HALLA ENGINEERING & CONSTSRUCTION CORP.Inventors: Woo Myung Heo, Gil Son Hwang, Dong Oug Kim, Ho Joon Kim, Dong Seop Kim, Sun Hee Lee, Haeng Seop Song
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Patent number: 8802972Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.Type: GrantFiled: June 2, 2009Date of Patent: August 12, 2014Assignee: Samsung SDI Co., Ltd.Inventors: Min-Seok Oh, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim
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Publication number: 20140130854Abstract: A photoelectric device includes: a semiconductor substrate including monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed on the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon.Type: ApplicationFiled: July 23, 2013Publication date: May 15, 2014Applicant: SAMSUNG SDI CO., LTD.Inventors: Doo-Youl Lee, Sang-Jin Park, Yoon-Mook Kang, Hyoeng-Ki Kim, Chan-Bin Mo, Young-Sang Park, Kyoung-Jin Seo, Min-Sung Kim, Jun-Ki Hong, Heung-Kyoon Lim, Min-Chul Song, Sung-Chan Park, Dong-Seop Kim
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Patent number: 8664015Abstract: A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.Type: GrantFiled: August 7, 2012Date of Patent: March 4, 2014Assignee: Samsung SDI Co., Ltd.Inventors: Sang-Jin Park, Min-Chul Song, Sung-Chan Park, Dong-Seop Kim, Won-Gyun Kim, Sang-Won Seo
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Patent number: 8623692Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.Type: GrantFiled: October 18, 2011Date of Patent: January 7, 2014Assignee: Samsung SDI Co., Ltd.Inventors: Myung Su Kim, Min Chul Song, Soon Young Park, Dong Seop Kim, Sung Chan Park, Yoon Mook Kang, Tae Jun Kim, Min Ki Shin, Sang Won Lee, Heung Kyoon Lim
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Publication number: 20130267059Abstract: A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted. According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.Type: ApplicationFiled: September 12, 2012Publication date: October 10, 2013Inventors: Young-Jin Kim, Doo-Youl Lee, Young-Su Kim, Chan-Bin Mo, Young-Sang Park, Jae-Ho Shin, Sang-Jin Park, Sang-Won Seo, Min-Chul Song, Dong-Seop Kim
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Publication number: 20130125964Abstract: A solar cell including a crystalline semiconductor substrate having a first conductive type; a first doping layer on a front surface of the substrate and being doped with a first conductive type impurity; a front surface antireflection film on the front surface of the substrate; a back surface antireflection film on a back surface of the substrate; an intrinsic semiconductor layer, an emitter, and a first auxiliary electrode stacked on the back surface antireflection film and the substrate; a second doping layer on the back surface of the substrate and being doped with the first impurity; an insulating film on the substrate and including an opening overlying the second doping layer; a second auxiliary electrode in the opening and overlying the second doping layer; a first electrode on the first auxiliary electrode; and a second electrode on the second auxiliary electrode and being separated from the first electrode.Type: ApplicationFiled: August 8, 2012Publication date: May 23, 2013Inventors: Chan-Bin MO, Doo-Youl LEE, Young-Jin KIM, Min-Seok OH, Sung-Chan PARK, Yun-Seok LEE, Nam-Kyu Song, Dong-Seop KIM, Min-Sung KIM, Cho-Young LEE, Young-su KIM, Young-Sang PARK
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Publication number: 20130112253Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.Type: ApplicationFiled: August 3, 2012Publication date: May 9, 2013Inventors: Min-Seok OH, Doo-Youl Lee, Young-Jin KIM, Min PARK, Yun-Seok LEE, Nam-Kyu SONG, Dong-Seop KIM, Cho-Young LEE, Chan-Bin MO, Young-Su KIM, Hoon-Ha JEON, Yeon-Ik JANG, Jun-Ki HONG, Young-Sang PARK, Chan-Yoon JUNG
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Publication number: 20130104974Abstract: A solar cell includes a silicon substrate including a front surface for receiving light, and a rear surface opposite the front surface, an emitter diffusion region on the rear surface and doped with a first polarity that is opposite to a polarity of the silicon substrate, a base diffusion region on the rear surface of the substrate and doped with a second polarity that is the same as the polarity of the silicon substrate, and an insulation gap between the emitter diffusion region and the base diffusion region, wherein the base diffusion region has a closed polygonal shape, and wherein the insulation gap is adjacent the base diffusion region.Type: ApplicationFiled: September 14, 2012Publication date: May 2, 2013Inventors: Young-Su Kim, Dong-Seop Kim, Doo-Youl Lee, Young-Jin Kim, Young-Sang Park, Chan-Bin Mo, Sung-Chul Lee