Patents by Inventor Dong-Seop Kim

Dong-Seop Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11959202
    Abstract: Provided are an apparatus for manufacturing a textile grid with increased adhesion and a method thereof capable of integrating the textile grid with a concrete structure by increasing the adhesion of the textile grid when the concrete structure is built, repaired, or reinforced, increasing structural safety and durability of the concrete structure, increasing a working speed by coating a surface of the textile grid with an abrasive material powder that is a surface coating material in an automatic series of processes immediately after the textile grid is manufactured, and increasing coating performance by automatically inspecting and adjusting the amount of the coating material applied to the surface of the textile grid using a camera.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: April 16, 2024
    Assignee: KOREA INSTITUTE OF CIVIL ENGINEERING AND BUILDING TECHNOLOGY
    Inventors: Hyeong Yeol Kim, Kyung Taek Koh, Gum Sung Ryu, Gi Hong An, Dong Woo Seo, Seung Seop Jin
  • Publication number: 20240100719
    Abstract: A gripper includes a body part, a finger base part coupled to the body part, and a finger part coupled to a first side of the body part or the finger base part and coupled to the body part or the finger base part to be reciprocal, wherein the finger part comprises a first link structure and a second link structure, sides of which are coupled to the finger base part, respectively, and wherein, in the first link structure and the second link structure, a first support area of the first link structure and a second support area of the second link structure reciprocate in only one of a plurality of directions that cross a direction in which the finger part reciprocates with respect to the finger base part.
    Type: Application
    Filed: February 6, 2023
    Publication date: March 28, 2024
    Inventors: Beom Su Kim, Hyun Seop Lim, Ju Young Yoon, Kyu Jung Kim, Hyo Joong Kim, Seong Taek Hwang, Ho Jun Kim, Dong Jin Hyun, Min Woong Jeung
  • Publication number: 20240100690
    Abstract: A gripper includes a body part, a finger base part coupled to the body part to be rotatable, the finger base part including a first finger base part and a second finger base part configured such that when the first finger base part is rotated in a first direction with respect to the body part, the second finger base part is provided to be rotatable in a second direction opposite the first direction with respect to the body part, and a finger part coupled to a first side of the body part or the finger base part to be reciprocal.
    Type: Application
    Filed: February 6, 2023
    Publication date: March 28, 2024
    Inventors: Beom Su Kim, Hyun Seop Lim, Ju Young Yoon, Kyu Jung Kim, Hyo-Joong Kim, Seong Taek Hwang, Ho Jun Kim, Dong Jin Hyun, Min Woong Jeung
  • Publication number: 20240099095
    Abstract: A display device including a base layer, a circuit layer, a light emitting device layer, an organic layer, and a touch sensing unit. The base layer includes a display area and a non-display area. A plurality of insulation patterns overlaps the non-display area. The organic layer is disposed on the light emitting device and overlaps the plurality of insulation patterns and the organic light emitting diode. At least a portion of the plurality of touch signal lines overlaps the plurality of insulation patterns.
    Type: Application
    Filed: November 27, 2023
    Publication date: March 21, 2024
    Inventors: Se-ho KIM, Wonkyu Kwak, Ji-eun Lee, Yohan Kim, Dong-Seop Park, Kwangsik Lee, Jaesun Lee, Sungho Cho
  • Publication number: 20160276506
    Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.
    Type: Application
    Filed: March 21, 2016
    Publication date: September 22, 2016
    Inventors: Min-Seok OH, Doo-Youl LEE, Young-Jin KIM, Min PARK, Yun-Seok LEE, Nam-Kyu SONG, Dong-Seop KIM, Cho-Young LEE, Chan-Bin MO, Young-Su KIM, Hoon-Ha JEON, Yeon-Ik JANG, Jun-Ki HONG, Young-Sang PARK, Chan-Yoon JUNG
  • Patent number: 9412895
    Abstract: A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted. According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: August 9, 2016
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Young-Jin Kim, Doo-Youl Lee, Young-Su Kim, Chan-Bin Mo, Young-Sang Park, Jae-Ho Shin, Sang-Jin Park, Sang-Won Seo, Min-Chul Song, Dong-Seop Kim
  • Patent number: 9293614
    Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: March 22, 2016
    Assignee: Intellectual Keystone Technology LLC
    Inventors: Min-Seok Oh, Doo-Youl Lee, Young-Jin Kim, Min Park, Yun-Seok Lee, Nam-Kyu Song, Dong-Seop Kim, Cho-Young Lee, Chan-Bin Mo, Young-Su Kim, Hoon-Ha Jeon, Yeon-Ik Jang, Jun-Ki Hong, Young-Sang Park, Chan-Yoon Jung
  • Patent number: 8969713
    Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
    Type: Grant
    Filed: January 27, 2012
    Date of Patent: March 3, 2015
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Min-Seok Oh, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim
  • Patent number: 8950362
    Abstract: An otter habitation section, an overland section, an inclined-surface section, a first spawning section, a second spawning section and a roost are all provided. Accordingly, otters and birds can sufficiently obtain preys, and fishes secure a spawning ground suitable for spawning characteristics. Therefore, the otters, the fishes and the birds can inhabit together. Further, since frames are made of wood for providing buoyant force or the frames are made of stainless steel for reinforcing strength and wood for providing buoyant force, a small amount of polyethylene foam is required. Accordingly, it is possible to obtain floating wetland equipment with a simple structure. Furthermore, the wooden frames itself provide a spawning ground of fishes.
    Type: Grant
    Filed: April 6, 2012
    Date of Patent: February 10, 2015
    Assignees: Kangwon National University University-Industry Cooperation Foundation, Korea Water Resources Corporation, Halla Engineering & Construction Corp.
    Inventors: Woo Myung Heo, Gil Son Hwang, Dong Oug Kim, Ho Joon Kim, Dong Seop Kim, Sun Hee Lee, Haeng Seop Song
  • Patent number: 8916767
    Abstract: A solar cell and a method of fabricating the same are provided according to one or more embodiments. According to an embodiment, the solar cell includes a substrate, a back electrode layer formed on the substrate, a light absorbing layer formed on the back electrode layer, and a transparent electrode layer formed on the light absorbing layer, wherein the light absorbing layer is comprised of copper (Cu), gallium (Ga), indium (In), sulfur (S), and selenium (Se) and includes a first concentration region in which concentrations of sulfur (S) gradually decrease in the light absorbing layer going in a first direction from the back electrode layer to the transparent electrode layer.
    Type: Grant
    Filed: December 10, 2009
    Date of Patent: December 23, 2014
    Assignees: Samsung SDI Co., Ltd., Samsung Display Co., Ltd.
    Inventors: Gug-Il Jun, Woo-Su Lee, Dong-Seop Kim, Jin-Seock Kim, Byoung-Dong Kim, Kang-Hee Lee, Dong-Gi Ahn, Byung-Joo Lee, Hyoung-Jin Park, In-Ki Kim
  • Patent number: 8889981
    Abstract: A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: November 18, 2014
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Doo-Youl Lee, Young-Jin Kim, Dong-Seop Kim, Chan-Bin Mo, Young-Su Kim, Young-Sang Park
  • Publication number: 20140251225
    Abstract: An otter habitation section, an overland section, an inclined-surface section, a first spawning section, a second spawning section and a roost are all provided. Accordingly, otters and birds can sufficiently obtain preys, and fishes secure a spawning ground suitable for spawning characteristics. Therefore, the otters, the fishes and the birds can inhabit together. Further, since frames are made of wood for providing buoyant force or the frames are made of stainless steel for reinforcing strength and wood for providing buoyant force, a small amount of polyethylene foam is required. Accordingly, it is possible to obtain floating wetland equipment with a simple structure. Furthermore, the wooden frames itself provide a spawning ground of fishes.
    Type: Application
    Filed: April 6, 2012
    Publication date: September 11, 2014
    Applicants: KANGWON NATIONAL UNIVERSITY UNIVERSITY-INDUSTRY COOPERATION FOUNDATION, KOREA WATER RESOURCES CORPORATION, HALLA ENGINEERING & CONSTSRUCTION CORP.
    Inventors: Woo Myung Heo, Gil Son Hwang, Dong Oug Kim, Ho Joon Kim, Dong Seop Kim, Sun Hee Lee, Haeng Seop Song
  • Patent number: 8802972
    Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: August 12, 2014
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Min-Seok Oh, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim
  • Publication number: 20140130854
    Abstract: A photoelectric device includes: a semiconductor substrate including monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed on the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon.
    Type: Application
    Filed: July 23, 2013
    Publication date: May 15, 2014
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Doo-Youl Lee, Sang-Jin Park, Yoon-Mook Kang, Hyoeng-Ki Kim, Chan-Bin Mo, Young-Sang Park, Kyoung-Jin Seo, Min-Sung Kim, Jun-Ki Hong, Heung-Kyoon Lim, Min-Chul Song, Sung-Chan Park, Dong-Seop Kim
  • Patent number: 8664015
    Abstract: A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: March 4, 2014
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Sang-Jin Park, Min-Chul Song, Sung-Chan Park, Dong-Seop Kim, Won-Gyun Kim, Sang-Won Seo
  • Patent number: 8623692
    Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: January 7, 2014
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Myung Su Kim, Min Chul Song, Soon Young Park, Dong Seop Kim, Sung Chan Park, Yoon Mook Kang, Tae Jun Kim, Min Ki Shin, Sang Won Lee, Heung Kyoon Lim
  • Publication number: 20130267059
    Abstract: A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted. According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
    Type: Application
    Filed: September 12, 2012
    Publication date: October 10, 2013
    Inventors: Young-Jin Kim, Doo-Youl Lee, Young-Su Kim, Chan-Bin Mo, Young-Sang Park, Jae-Ho Shin, Sang-Jin Park, Sang-Won Seo, Min-Chul Song, Dong-Seop Kim
  • Publication number: 20130125964
    Abstract: A solar cell including a crystalline semiconductor substrate having a first conductive type; a first doping layer on a front surface of the substrate and being doped with a first conductive type impurity; a front surface antireflection film on the front surface of the substrate; a back surface antireflection film on a back surface of the substrate; an intrinsic semiconductor layer, an emitter, and a first auxiliary electrode stacked on the back surface antireflection film and the substrate; a second doping layer on the back surface of the substrate and being doped with the first impurity; an insulating film on the substrate and including an opening overlying the second doping layer; a second auxiliary electrode in the opening and overlying the second doping layer; a first electrode on the first auxiliary electrode; and a second electrode on the second auxiliary electrode and being separated from the first electrode.
    Type: Application
    Filed: August 8, 2012
    Publication date: May 23, 2013
    Inventors: Chan-Bin MO, Doo-Youl LEE, Young-Jin KIM, Min-Seok OH, Sung-Chan PARK, Yun-Seok LEE, Nam-Kyu Song, Dong-Seop KIM, Min-Sung KIM, Cho-Young LEE, Young-su KIM, Young-Sang PARK
  • Publication number: 20130112253
    Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.
    Type: Application
    Filed: August 3, 2012
    Publication date: May 9, 2013
    Inventors: Min-Seok OH, Doo-Youl Lee, Young-Jin KIM, Min PARK, Yun-Seok LEE, Nam-Kyu SONG, Dong-Seop KIM, Cho-Young LEE, Chan-Bin MO, Young-Su KIM, Hoon-Ha JEON, Yeon-Ik JANG, Jun-Ki HONG, Young-Sang PARK, Chan-Yoon JUNG
  • Publication number: 20130104974
    Abstract: A solar cell includes a silicon substrate including a front surface for receiving light, and a rear surface opposite the front surface, an emitter diffusion region on the rear surface and doped with a first polarity that is opposite to a polarity of the silicon substrate, a base diffusion region on the rear surface of the substrate and doped with a second polarity that is the same as the polarity of the silicon substrate, and an insulation gap between the emitter diffusion region and the base diffusion region, wherein the base diffusion region has a closed polygonal shape, and wherein the insulation gap is adjacent the base diffusion region.
    Type: Application
    Filed: September 14, 2012
    Publication date: May 2, 2013
    Inventors: Young-Su Kim, Dong-Seop Kim, Doo-Youl Lee, Young-Jin Kim, Young-Sang Park, Chan-Bin Mo, Sung-Chul Lee