Abstract: Described is a sliding device allowing a user to switch between an electric sliding mode and a manual sliding mode as needed and including a guide rail module, a sliding rail slidably coupled to the guide rail module, a rail driving module coupled to the sliding rail and configured to move the sliding rail along the guide rail module by driving of a motor, and a sliding mode switching module configured to switch an operation mode of the sliding rail from an electric sliding mode to a manual sliding mode by blocking a driving force of the rail driving module from being transmitted to the sliding rail. The sliding device may be used for sliding a storage box for a vehicle.

Abstract: In one example, an electronic device can comprise a substrate, a substrate sidewall over a side of the substrate. An electronic device can be disposed over the side of substrate and adjacent the substrate sidewall. An internal interconnect can be disposed between the electronic device and the substrate sidewall. An encapsulant can cover the internal interconnect between the electronic device and the substrate sidewall. A lid attach material can be disposed over the substrate sidewall and the encapsulant. A lid can be coupled to the encapsulant and the substrate sidewall by the lid attach material. A cavity can be defined between a bottom side of the lid and a top side of the electronic device. Other examples and related methods are also disclosed herein.

Abstract: The present invention is directed to the synthesis of metallic nickel-molybdenum-tungsten films and coatings with direct current sputter deposition, which results in fully-dense crystallographically textured films that are filled with nano-scale faults and twins. The as-deposited films exhibit linear-elastic mechanical behavior and tensile strengths above 2.5 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultra-high strength is attributed to a combination of solid solution strengthening and the presence of the dense nano-scale faults and twins. These films also possess excellent thermal and mechanical stability, high density, low CTE, and electrical properties that are attractive for next generation metal MEMS applications. Deposited as coatings these films provide protection against friction and wear.

Abstract: In one example, a semiconductor device comprises a spacer substrate, a first lens substrate over the first spacer substrate, and a lens protector over the first lens dielectric adjacent to the first lens. The spacer substrate comprises a spacer dielectric, a spacer top terminal, a spacer bottom terminal, and a spacer via. The first lens substrate comprises a first lens dielectric, a first lens, a first lens top terminal, a first lens bottom terminal, and a first lens via. A first interconnect is coupled with the spacer top terminal and the first lens bottom terminal. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a spacer substrate, a first lens substrate over the first spacer substrate, and a lens protector over the first lens dielectric adjacent to the first lens. The spacer substrate comprises a spacer dielectric, a spacer top terminal, a spacer bottom terminal, and a spacer via. The first lens substrate comprises a first lens dielectric, a first lens, a first lens top terminal, a first lens bottom terminal, and a first lens via. A first interconnect is coupled with the spacer top terminal and the first lens bottom terminal. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a spacer substrate, a first lens substrate over the first spacer substrate, and a lens protector over the first lens dielectric adjacent to the first lens. The spacer substrate comprises a spacer dielectric, a spacer top terminal, a spacer bottom terminal, and a spacer via. The first lens substrate comprises a first lens dielectric, a first lens, a first lens top terminal, a first lens bottom terminal, and a first lens via. A first interconnect is coupled with the spacer top terminal and the first lens bottom terminal. Other examples and related methods are also disclosed herein.

Abstract: A method for forming a semiconductor device with an electromagnetic interference shield is disclosed and may include coupling a semiconductor die to a first surface of a substrate, encapsulating the semiconductor die and portions of the substrate using an encapsulant, placing the encapsulated substrate and semiconductor die on an adhesive tape, and forming an electromagnetic interference (EMI) shield layer on the encapsulant, on side surfaces of the substrate, and on portions of the adhesive tape adjacent to the encapsulated substrate and semiconductor die. The adhesive tape may be peeled away from the encapsulated substrate and semiconductor die, thereby leaving portions of the EMI shield layer on the encapsulant and on the side surfaces of the substrate with other portions of the EMI shield layer remaining on portions of the adhesive tape. Contacts may be formed on a second surface of the substrate opposite to the first surface of the substrate.

Abstract: The present invention is directed to the synthesis of metallic nickel-molybdenum-tungsten films and coatings with direct current sputter deposition, which results in fully-dense crystallographically textured films that are filled with nano-scale faults and twins. The as-deposited films exhibit linear-elastic mechanical behavior and tensile strengths above 2.5 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultra-high strength is attributed to a combination of solid solution strengthening and the presence of the dense nano-scale faults and twins. These films also possess excellent thermal and mechanical stability, high density, low CTE, and electrical properties that are attractive for next generation metal MEMS applications. Deposited as coatings these films provide protection against friction and wear.

Abstract: A method for forming a semiconductor device with an electromagnetic interference shield is disclosed and may include coupling a semiconductor die to a first surface of a substrate, encapsulating the semiconductor die and portions of the substrate using an encapsulant, placing the encapsulated substrate and semiconductor die on an adhesive tape, and forming an electromagnetic interference (EMI) shield layer on the encapsulant, on side surfaces of the substrate, and on portions of the adhesive tape adjacent to the encapsulated substrate and semiconductor die. The adhesive tape may be peeled away from the encapsulated substrate and semiconductor die, thereby leaving portions of the EMI shield layer on the encapsulant and on the side surfaces of the substrate with other portions of the EMI shield layer remaining on portions of the adhesive tape. Contacts may be formed on a second surface of the substrate opposite to the first surface of the substrate.

Abstract: The present invention relates to perform presence service in a wireless communication system that is available to a mobile device.

Abstract: The present invention relates to perform presence service in a wireless communication system that is available to a mobile device.

Abstract: The present invention relates to perform presence service in a wireless communication system that is available to a mobile device.

Abstract: The present invention relates to perform presence service in a wireless communication system that is available to a mobile device.

Abstract: An environment difference detector includes an elastic surface wave element equipped with a substrate including a surface having an annular surface acoustic wave circulating path, a surface acoustic wave exciting/receiving unit exciting a surface acoustic wave along the circular path and receiving the circulated surface acoustic wave, and a sensitive film disposed on the circular path to change an elastic nature in accordance with a change in an adjacent environment, a speed/intensity measuring unit measuring a circulating speed and intensity of the surface acoustic wave from an electric signal generated by the unit when the unit receives the circulating surface acoustic wave, and an environment evaluation unit evaluating an environment adjacent to the sensitive film from at least one of the circulating speed and the intensity measured by the unit.

Abstract: A method for transmitting location information includes the steps of: a) receiving a start message including MO (mobile originated location request) mode information from a first terminal; b) calculating location information of the first terminal; and c) transmitting the calculated first terminal's location information according to the MO (mobile originated location request) mode information. A method for transmitting location information in a Secure User Plane Location (SUPL) protocol of a first SUPL Enabled Terminal (SET), a SUPL Location Platform (SLP), and a second SUPL Enabled Terminal (SET) includes the steps of: a) receiving a start message including MO (mobile originated location request) mode information from the first SET; b) calculating location information of the first SET; and c) transmitting the calculated first SET's location information to any one of the first SET and the second SET according to the MO (mobile originated location request) mode information.

Abstract: A wear-resist mechanical component used in a frictional contact area requiring wear-resistance and a method of producing the same is provided. The method comprises the steps of: depositing hard particles of one or more substances selected from the group consisting of carbides, nitrides and borides on an iron-based metal body to a predetermined thickness; depositing binder powders atop of the hard particle layer to a predetermined thickness; and heating the hard particles, the binder powders and the iron-based metal body, so that the iron-base metal body and the hard particles are bonded together. This can obtain a wear-resistant mechanical component having high hardness and excellent wear resistance without having to go through the step of mixing hard particles with binder to form the mixture. The super-hard alloy can be bonded to the base metal body regardless of the shape of the base metal body.