Abstract: A capacitor component includes a body including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer. The dielectric layer includes dielectric grains, at least a portion of the dielectric grains has a core-shell structure, and a shell of the core-shell structure contains a rare earth element having an average concentration of more than 0.5 at %.

Abstract: Provided is a compound of Chemical Formula 1: wherein: A1 represents Chemical Formula 1-a: the dotted line fuses with an adjacent ring, X is O or S, Ar1 is a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing at least one of N, O and S; D is deuterium; L is a single bond, or a substituted or unsubstituted C6-60 arylene or C2-60 heteroarylene containing at least one of N, O and S; A2 is Chemical Formula 1-b or 1-c: L1 and L2 are independently a single bond, or a substituted or unsubstituted C6-60 arylene or C2-60 heteroarylene containing at least one of N, O and S; Ar2 to Ar5 are independently a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing at least one of N, O and S; and n is 0 to 5, and an organic light-emitting device including the same.

Abstract: Provided is a method for manufacturing a composition for increasing cognitive function.

Abstract: An electronic device including a touch-enabled display module configured to display a plurality of windows according to a multi-window mode; and a control module configured to displaying on the touch screen a first application window and a second application window according to the multi-window mode, alter the first application window in response to a touchscreen input received via the touch-enabled display, and automatically alter the second application window in response to the alteration of the first application window.

Abstract: A pixel includes: a light emitting element; a first transistor including a gate electrode electrically connected to a first node, a second node to which a first power voltage for driving the light emitting element is to be applied, and a third node electrically connected to the light emitting element; and a bias control transistor configured to be controlled in operating timing thereof by a bias control signal, and configured to switch electrical connection between the second node and a bias power line for transmitting a bias voltage. In one frame period, a voltage level of the bias voltage to be applied to the second node sequentially increases.

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

Abstract: The present invention relates to an apparatus and method for encoding and decoding an image by skip encoding. The image-encoding method by skip encoding, which performs intra-prediction, comprises: performing a filtering operation on the signal which is reconstructed prior to an encoding object signal in an encoding object image; using the filtered reconstructed signal to generate a prediction signal for the encoding object signal; setting the generated prediction signal as a reconstruction signal for the encoding object signal; and not encoding the residual signal which can be generated on the basis of the difference between the encoding object signal and the prediction signal, thereby performing skip encoding on the encoding object signal.

Abstract: A reference voltage generating circuit of a semiconductor memory device including a reference voltage circuit for producing a constant voltage, a differential amplifier for receiving the constant voltage as one input, a MOS transistor with the gate connected to the output of the differential amplifier and with the channel connected between a power supply terminal and a reference voltage output terminal and a voltage divider with an input and output respectively connected to the reference voltage output terminal and the other input of the differential amplifier, is disclosed. The voltage divider has a MOS transistor connected between the reference voltage output terminal and the output and a resistor connected between the output and ground voltage terminal, the MOS transistor being operated in saturation region.