Abstract: Disclosed is a wiper lever assembly that includes upper and lower levers, a plurality of pivotal connecting parts that are pivotally coupled to a longitudinal end of the upper lever, and a plurality of mating pivotal connecting parts that are disposed on the lower lever. The assembly further includes an upper pressing arc portion disposed on the upper lever over the plurality of pivotal pressing parts. The upper pressing arc is in slidable contact with a lower engaging arc portion disposed on the lower lever. In addition, a radius of curvature of a concave arc of the upper pressing arc portion and the lower engaging arc portion is larger than that of a convex arc of the upper pressing arc portion and the lower engaging arc portion.

Abstract: An automated manual transmission may include a first input shaft and a second input shaft disposed in parallel with each other to form a plurality of stages with a common output shaft, a first switching mechanism that directly transmits or cuts power provided from a flywheel of an engine to or from the first input shaft or the second input shaft, and a second switching mechanism that transmits or cuts power provided from the flywheel through the clutch to or from the first input shaft or the second input shaft.

Abstract: An automated manual transmission apparatus for a vehicle, may include a shifting unit equipped with a plurality of shifting mechanisms that implement different gear ratios between an input shaft and an output shaft, and a continuous transmission mechanism that may be disposed between the output shaft and a power supply, wherein the continuous transmission mechanism selectively supplies power to the input shaft of the shifting unit and selectively transmits power from the power supply to the output shaft with a continuous transmission gear ratio.

Abstract: Methods of operating semiconductor devices that include variable resistance devices, the methods including writing first data to a semiconductor device by applying a reset pulse voltage to the variable resistance device so that the variable resistance device is switched from a first resistance state to a second resistance state, and writing second data to the semiconductor device by applying a set pulse voltage to the variable resistance device so that the variable resistance device is switched from the second resistance state to the first resistance state to the second resistance state. The reset pulse voltage is higher than the set pulse voltage, and a resistance in the second resistance state is greater than in the first resistance state.

Abstract: An automated manual transmission apparatus for a vehicle, may include a shifting unit having a plurality of stages between an input shaft and an output shaft and selectively cutting power to the input shaft and the output shaft when shifting between the stages, and a continuous transmission mechanism that may be disposed between the output shaft and a power supply that supplies the power to the input shaft of the shifting unit, wherein the continuous transmission mechanism selectively transmits the power from the power supply to the output shaft with a continuous transmission gear ratio.

Abstract: Disclosed herein is a wiper lever assembly which is configured to prevent detachment of end cover members, which includes a lever member (a center cover lever, secondary levers and yoke levers) gripping a rubber blade disposed thereunder, and an end cover member which covers an end of the lever member from above and which includes claws formed on both lateral sides thereof. The claws may be extended inwardly from the end cover and engage with both lateral sides of a lower surface of the lever member to grip the lever member. The end cover member includes a support wall which is formed at the center of a width of the end cover member and is extended downwardly therefrom, and the lever member includes a receptor (an insert tube and a proximal insert tube) in which the support wall is fitted from above.

Abstract: A gigabit passive optical network (GPON) system for fiber to the home (FTTH) service must provide a down-stream data rate of an optical band to provide IPTV service with hundreds of channels to subscribers, and must be able to provide an upstream data rate of an optical band using a currently available BM-IC chip. A currently available BM-IC chip for a GPON has 1.244 Gbps and 2.488 Gbps modes. Accordingly, an optical network terminal (ONT) for a GPON that is capable of providing a downstream transmission band of 10-Gbps and an upstream transmission band of 1.244 Gbps or 2.488 Gbps, and a method for processing an upstream frame in the terminal, are provided. The GPON ONT can provide 20 Mbps, high-definition IPTV service with 500 channels and can provide both upstream data rates of 1.244 Gbps and 2.488 Gbps according to a user's selection without using an additional device.

Abstract: A laundry treatment device is provided which includes a first space for laundry treatment, a second space formed separate from the first space, and an air supply device provided in the second space, the air supply device supplying heated dry air to the first space.

Abstract: A resistive random access memory (RRAM) includes a resistive memory layer of a transition metal oxide, such as Ni oxide, and is doped with a metal material. The RRAM may include at least one first electrode, a resistive memory layer on the at least one first electrode, the resistive memory layer including a Ni oxide layer doped with at least one element selected from a group consisting of Fe, Co, and Sn, and at least one second electrode on the resistive memory layer. The RRAM device may include a plurality of first electrodes and a plurality of second electrodes, and the resistive memory layer may be between the plurality of first electrodes and the plurality of second electrodes.

Abstract: Disclosed is a low power optical network terminal (ONT) and a method of operating the low power ONT. The low power ONT may include a network media access control (MAC) processing unit to transmit and receive traffic to and from an optical line terminal (OLT), a switching unit to receive the traffic transmitted from the network MAC processing unit and transmit the traffic to a subscriber terminal and to receive the traffic from the subscriber terminal and transmit the traffic to the OLT, and a control unit to control traffic transmission from the network MAC processing unit when a power mode is a low power mode.

Abstract: A laundry treating device includes two separate laundry washing mechanisms. Methods of controlling such a laundry treating device include steps for supplying water to a first tub provided in the first laundry treating device and to a second tub provided in the second laundry treating device. The water can be supplied to the two tubs simultaneously or separately. Also, the water supply steps can be alternated. Further individual hot and cold water supply steps can include simultaneously or sequentially supplying the hot and cold water.

Abstract: A burst mode optical repeater is provided. The burst mode optical repeater receives optical signals, which are transmitted from a plurality of optical network units (ONUs) in a passive optical network (PON) to a central office using a time division multiplexing access (TDMA) method, and relays the received optical signals using an optical-electrical-optical (OEO) method. Since the burst mode optical repeater can be installed anywhere between an optical line terminal (OLT) and the ONUs, the number of subscribers and transmission range that can be supported by a corresponding network can be increased.

Abstract: A memory device includes a memory cell. The memory cell includes: a bipolar memory element and a bidirectional switching element. The bidirectional switching element is connected to ends of the bipolar memory element, and has a bidirectional switching characteristic. The bidirectional switching element includes: a first switching element and a second switching element. The first switching element is connected to a first end of the bipolar memory element and has a first switching direction. The second switching element is connected to a second end of the bipolar memory element and has a second switching direction. The second switching direction is opposite to the first switching direction.

Abstract: Method pertains to a medical imaging device for simultaneously detecting fluorescence and Raman signals for multiple fluorescence and Raman signal targets. The method includes: injecting at least one marker particle including Raman markers and receptors into the body of an animal, which can be a human; irradiating a laser beam onto the body of the animal; and detecting the optical signals emitted by the marker particle after the irradiation of the laser beam separately as fluorescence signals and Raman signals. The simultaneous detection of multiple targets may be performed even without scanning optical signals emitted by the marker particle individually with different optical fibers. As an examination may be performed by injecting surface-enhanced Raman marker particles, into which fluorescent components are introduced, into the body of the animal using a spray or the like, weak Raman signals may be augmented so as to obtain a more accurate diagnosis result in real time.

Abstract: Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level.

Abstract: A laundry machine includes a first laundry treating device, and a second laundry treating device arranged adjacent to the first laundry treating device. The second laundry treating device is operable independently of the first laundry treating device. A first draining pipe guides water discharged from the first laundry treating device, and a second draining pipe guides water discharged from the second laundry treating device. A joining pipe is connected to the first and second draining pipes at a joining point.

Abstract: An apparatus and method for managing a dynamic bandwidth allocation to support a low-power mode, in a passive optical network (PON) are provided. The apparatus may include a power saving mode managing unit to manage a power saving mode of at least one optical network unit (ONU), a bandwidth allocation parameter storage unit to store a bandwidth allocation parameter used for a power saving mode, and to maintain the stored bandwidth allocation parameter, and a dynamic bandwidth allocating unit to provide bandwidth allocation information to the at least one ONU, when the stored bandwidth allocation parameter is received.

Abstract: In a method of operating a semiconductor device, a resistance value of a variable resistance element is changed from a first resistance value to a second resistance value by applying a first voltage to the variable resistance element; and a first current that flows through the variable resistance element is sensed. A second voltage for changing the resistance value of the variable resistance element from the second resistance value to the first resistance value is modulated based on a dispersion of the first current, and the first voltage is re-applied to the variable resistance element based on a dispersion of the first current.

Abstract: According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device.

Abstract: A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell.