Abstract: A QoS-based call admission system and method for a mobile communication system. To establish a call for a mobile station according to the QoS of the call, upon request of setup of a call requiring a QoS guarantee, a base transceiver station determines whether a channel element is available. In the presence of an available channel element, the base transceiver station determines whether a remaining bandwidth can support a data rate required to guarantee the QoS. If the data rate is supported, the base transceiver station assigns the channel element and connects its intra switch to a base station controller. Then the base transceiver station transmits a call accept response signal to the base station controller.

Abstract: Disclosed is a method for transmitting a packet through a plurality of physical links in a mobile communication system in which a base station controller (BSC) is connected to a base transceiver system (BTS) through the plurality of physical links. The method includes the steps of determining whether a specific service uses at least two links, when there is transmission data for the service; setting up a sequence number in the transmission packet, when the service uses at least two links; and transmitting the packet through a link selected from the two links.

Abstract: A method and apparatus for retransmitting packet data lost during its transmission from a BSC to a BTS in a mobile communication system. The BTS sequentially receives packets from the BSC and determines whether there is a lost packet. When packet loss is detected, the BTS buffers packets received after a lost packet and requests a retransmission of the lost packet to the BSC. The BSC retransmits the lost packet to the BTS in response to the retransmission request. The BTS rearranges the retransmitted packet and the buffered packets according to the right order and transmits the rearranged packets to an MS.

Abstract: In the capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film.

Abstract: Disclosed is a method for manufacturing multilayer ceramics, and in particular, a method for manufacturing multilayer ceramics with improved interlayer bonding by laminating ceramic tapes manufactured from slurry under vacuum and sintering them. The method comprises the steps of: admixing an organic substance comprising a dispersion agent, a plasticizer, and a binder with ceramic powder to give slurry; defoaming the ceramic slurry under vacuum, followed by casting the defoamed ceramic slurry into ceramic tapes; laminating the ceramic tapes at room temperature to 100° C. under vacuum less than 1 atm; burning out the organic substances from the ceramic tapes laminated under vacuum; and sintering the laminated ceramic tapes free of organic substances.

Abstract: In the method for manufacturing a capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film.

Abstract: In the method for manufacturing a capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film.

Abstract: There is provided an alloy-coated optical fiber and a fabricating method thereof. In the alloy-coated optical fiber, a core is formed of a light transmitting material, a clad surrounds the outer circumferential surface of the core, and an indium-tin-silver coating layer is formed around the outer circumferential surface of the clad.

Abstract: Provided with a method for preparing a silicon nitride ceramic with high strength and toughness including: mixing 0.2-0.9 wt % of carbon (C) powder with silicon nitride powder containing 5.0-6.0 wt % of yttria (Y2O3) and 1.0-2.0 wt % of alumina (Al2O3) added thereto as a sintering agent, and preparing a molding; subjecting the molding to a carbothermal reduction treatment at 1400-1500° C.; and gas pressure sintering the molding at a temperature above 1850° C. after the carbothermal reduction treatment.

Abstract: A method of unidirectionally aligning the whiskers during tape casting and a sintered silicon nitride laminate of controlled properties and microstructure through alignment of the reinforcing grains fabricated by using the method are disclosed. The whiskers are unidirectionally oriented by placing a row of guides 0.2-0.5 mm apart from each other at exit of the reservoir of the slip containing the whiskers during tape casting. The silicon nitride comprising 10-30 volume % of elongated large grains growing from the .beta.-Si.sub.3 N.sub.4 whiskers and oriented unidirectionally in the fine grained matrix is fully densified by gas pressure sintering at 1900.degree. C. It exhibits a fracture toughness value as high as 9.24 Mpa m normal to the whisker alignment according to the Evans-Charles' method disclosed in the Journal of the American Ceramic Society, 59 [7-8], 371-372 (1976).

Abstract: An electrical discharge machinable MgO-Partially Stabilized Zirconia (PSZ) and titanium di-boride (TiB.sub.2) ceramic composite body of good mechanical properties and the method of making it are disclosed. The ceramic composite comprising less than 40% by weight of TiB.sub.2 balanced by 10 mole % of MgO-Partially Stabilized Zirconia is fully densified by pressureless sintering at 1850.degree. C.-1900.degree. C. and exhibits the fracture toughness (K.sub.IC) value of 8-11 MPa.multidot.m.sup.1/2 measured according to the indentation crack length method and Evans-Charles' method provided in Journal of the American Ceramic Society volume 59 ?7-8!, 371-372 (1976) after annealing at 1320.degree.-1400.degree. C.