Abstract: A cartridge for mounting on a main body of an aerosol generating device includes: a liquid storage extending in a longitudinal direction of the cartridge to form an outer wall of the cartridge, the liquid storage including a space accommodating a liquid composition therein; a heater that heats the liquid composition accommodated in the liquid storage to generate an aerosol; and a coupling protrusion including an elastic material, the coupling protrusion protruding from an outer surface of the liquid storage and coupling the main body to the cartridge.

Abstract: Disclosed herein are a catalyst for hydrocracking reaction of high molecular weight components in bio-oil, a method for preparing the same and a method for bio-oil upgrading using the same. The catalyst includes a zeolite carrier; and at least one metal selected from the group consisting of nickel (Ni), ruthenium (Ru) and cerium (Ce) supported on the carrier. The catalyst promotes the hydrocracking of high molecular weight compounds contained in the bio-oil, but also inhibits the polymerization reaction of the decomposed product, thereby more effectively enhancing the hydrocracking reaction of the bio-oil.

Abstract: An electronic device including a touch-enabled display module configured to display a plurality of windows according to a multi-window mode; and a control module configured to displaying on the touch screen a first application window and a second application window according to the multi-window mode, alter the first application window in response to a touchscreen input received via the touch-enabled display, and automatically alter the second application window in response to the alteration of the first application window.

Abstract: A system and method for laser assisted bonding of semiconductor die. As non-limiting examples, various aspects of this disclosure provide systems and methods that enhance or control laser irradiation of a semiconductor die, for example spatially and/or temporally, to improve bonding of the semiconductor die to a substrate.

Abstract: A semiconductor device, including: a diffusion barrier layer composed of ternary compound elements formed on a substrate, wherein the diffusion barrier contains ruthenium, titanium and nitrogen; and a capacitor formed on the diffusion barrier layer, wherein the capacitor includes a bottom electrode formed on the diffusion barrier layer, a dielectric layer formed on the bottom electrode and a top electrode formed on the dielectric layer.

Abstract: The present invention provides a hydrogen barrier layer able to prevent diffusions of hydrogen into a capacitor and a method for fabricating a semiconductor device having the same. The inventive method includes the steps of: forming a capacitor on an upper portion of a substrate providing a transistor; forming a first hydrogen barrier layer covering the capacitor, the first hydrogen barrier layer containing Al and Ti; forming a metal line connecting the capacitor to the transistor; forming a second hydrogen barrier layer containing Al and Ti on the metal line; and forming a protection layer on the second hydrogen barrier layer.

Abstract: A semiconductor devices includes: a diffusion barrier layer composed of ternary compound elements formed on a substrate, wherein the diffusion barrier contains ruthenium, titanium and oxygen; and a capacitor formed on the diffusion barrier layer, wherein the capacitor includes a bottom electrode formed on the diffusion barrier layer, a dielectric layer formed on the bottom electrode and a top electrode formed on the dielectric layer.

Abstract: The present invention provides a hydrogen barrier layer able to prevent diffusions of hydrogen into a capacitor and a method for fabricating a semiconductor device having the same. The inventive method includes the steps of: forming a capacitor on an upper portion of a substrate providing a transistor; forming a first hydrogen barrier layer covering the capacitor, the first hydrogen barrier layer containing Al and Ti; forming a metal line connecting the capacitor to the transistor; forming a second hydrogen barrier layer containing Al and Ti on the metal line; and forming a protection layer on the second hydrogen barrier layer.

Abstract: The present invention provides a hydrogen barrier layer able to prevent diffusions of hydrogen into a capacitor and a method for fabricating a semiconductor device having the same. The inventive method includes the steps of: depositing a zirconium-titanium oxide layer containing zirconium, titanium and oxygen on a substrate; and performing a reforming process for densifying the zirconium-titanium oxide layer and for stuffing oxygen in a surface of the zirconium-titanium oxide layer.

Abstract: Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors which comprises a contact plug, a diffusion barrier film, a lower electrode formed of ruthenium, a dielectric film formed of high dielectric constant material and an upper electrode are disclosed, wherein the diffusion barrier film having strong chemical bond, amorphous structure without rapid diffusion path of oxygen and low electrical resistance prevents diffusion of oxygen atoms during a deposition process and thermal treatment of the dielectric film to improve operation of the capacitor and reliability of the device.

Abstract: The present invention is related to a method for forming a hydrogen barrier layer capable of protecting a bottom structure from damages occurring due to hydrogen produced during a semiconductor device fabrication. The method includes the steps of: forming a hafnium vanadium oxide (HfVOx) layer on a substrate structure providing a predetermined semiconductor device structure, the HfVOx layer being used as a hydrogen diffusion barrier layer; and forming an insulation layer on the HfVOx layer.

Abstract: A semiconductor device, including: a diffusion barrier layer composed of ternary compound elements formed on a substrate, wherein the diffusion barrier contains ruthenium, titanium and nitrogen; and a capacitor formed on the diffusion barrier layer, wherein the capacitor includes a bottom electrode formed on the diffusion barrier layer, a dielectric layer formed on the bottom electrode and a top electrode formed on the dielectric layer.

Abstract: Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors which comprises a contact plug, a diffusion barrier film, a lower electrode formed of ruthenium, a dielectric film formed of high dielectric constant material and an upper electrode are disclosed, wherein the diffusion barrier film having strong chemical bond, amorphous structure without rapid diffusion path of oxygen and low electrical resistance prevents diffusion of oxygen atoms during a deposition process and thermal treatment of the dielectric film to improve operation of the capacitor and reliability of the device.

Abstract: A semiconductor device, including: a diffusion barrier layer composed of ternary compound elements formed on a substrate, wherein the diffusion barrier contains ruthenium, titanium and nitrogen; and a capacitor formed on the diffusion barrier layer, wherein the capacitor includes a bottom electrode formed on the diffusion barrier layer, a dielectric layer formed on the bottom electrode and a top electrode formed on the dielectric layer.

Abstract: The present invention is related to a method for forming a hydrogen barrier layer capable of protecting a bottom structure from damages occurring due to hydrogen produced during a semiconductor device fabrication. The method includes the steps of: forming a hafnium vanadium oxide (HfVOx) layer on a substrate structure providing a predetermined semiconductor device structure, the HfVOx layer being used as a hydrogen diffusion barrier layer; and forming an insulation layer on the HfVOx layer.

Abstract: The present invention relates to a method for fabricating a semiconductor device having a diffusion barrier layer with a Cu line to prevent degradation in performance of the diffusion barrier layer. The present invention provides a method for fabricating a semiconductor device, including the steps of: depositing a tertiary nitride containing Ti, W and N on a substrate loaded inside of a reactive deposition chamber; and densifying the tertiary nitride and performing a reforming process for filling a surface of the tertiary nitride with oxygen. Also, the present invention provides a method for fabricating a semiconductor device, including the steps of: forming a conductive layer on top of a substrate; forming a diffusion barrier layer constructed with titanium (Ti), tungsten (W) and nitrogen (N) on the conductive layer; and forming a Cu line on the diffusion barrier layer.

Abstract: The present invention provides a hydrogen barrier layer able to prevent diffusions of hydrogen into a capacitor and a method for fabricating a semiconductor device having the same. The inventive method includes the steps of: depositing a zirconium-titanium oxide layer containing zirconium, titanium and oxygen on a substrate; and performing a reforming process for densifying the zirconium-titanium oxide layer and for stuffing oxygen in a surface of the zirconium-titanium oxide layer.

Abstract: The present invention provides a hydrogen barrier layer able to prevent diffusions of hydrogen into a capacitor and a method for fabricating a semiconductor device having the same. The inventive method includes the steps of: forming a capacitor on an upper portion of a substrate providing a transistor; forming a first hydrogen barrier layer covering the capacitor, the first hydrogen barrier layer containing Al and Ti; forming a metal line connecting the capacitor to the transistor; forming a second hydrogen barrier layer containing Al and Ti on the metal line; and forming a protection layer on the second hydrogen barrier layer.

Abstract: A forming capacitor method performing two steps of thermal treatment processes for preventing to generate a residual product having low permittivity at an interface between a dielectric and a bottom-electrode is disclosed. The method includes the steps of forming a bottom-electrode of a substrate, forming a dielectric on the bottom-electrode, performing a first thermal treatment process for crystallizing he dielectric, performing a second thermal treatment process for supplying oxygen to the dielectric and forming an upper-electrode on the dielectric. The above-mentioned processes of the present invention can restrain to produce the oxide having low permittivity, therefore a reliability of capacitor and electrical characteristics would be increased and improved.

Abstract: A semiconductor device, including: a diffusion barrier layer composed of ternary compound elements formed on a substrate, wherein the diffusion barrier contains ruthenium, titanium and nitrogen; and a capacitor formed on the diffusion barrier layer, wherein the capacitor includes a bottom electrode formed on the diffusion barrier layer, a dielectric layer formed on the bottom electrode and a top electrode formed on the dielectric layer.