Patents by Inventor Dong Sook Shin

Dong Sook Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6858554
    Abstract: Disclosed is a nonreducible dielectric composition. Provided is a highly reliable TC based dielectric composition prepared by adding a sintering additive having excellent qualities to a conventional (Ca1-xSrx)m(Zr1-yTiy)O3 based dielectric composition, so that it can be sintered under a reducing atmosphere to be used in formation of a nickel electrode, can be sintered at a temperature of less than 1,300° C., and even more, at a low temperature of 1,250° C., and has a small dielectric loss and a high resistivity. The composition of the present invention includes a nonreducible dielectric composition comprising a main component expressed by the general formula, (Ca1-xSrx)m(Zr1-yTiy)O3, which has the ranges of 0?x?1, 0?y<0.09, and 0.7?m?1.05; and 0.
    Type: Grant
    Filed: December 26, 2002
    Date of Patent: February 22, 2005
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Young Tae Moon, Jong Hee Kim, Dong Sook Shin, Young Min Kim
  • Patent number: 6790801
    Abstract: Disclosed is a nonreducible dielectric composition. Provided is a highly reliable TC based dielectric composition prepared by adding a sintering additive having excellent qualities to a conventional (Ca1-xSrx)m(Zr1-yTiy)O3 based dielectric composition, so that it can be sintered under a reducing atmosphere to be used in formation of a nickel electrode, can be sintered at a low temperature of less than 1,250° C., and has a small dielectric loss and a high resistivity. The composition of the present invention includes a nonreducible dielectric composition comprising a main component expressed by the general formula, (Ca1-xSrx)m(Zr1-yTiy)O3, which has the ranges of 0≦x≦1, 0.09≦y≦0.35, and 0.7≦m≦1.05; and 0.
    Type: Grant
    Filed: December 24, 2002
    Date of Patent: September 14, 2004
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Young Min Kim, Jong Hee Kim, Dong Sook Shin, Young Tae Moon
  • Publication number: 20030125192
    Abstract: Disclosed is a nonreducible dielectric composition. Provided is a highly reliable TC based dielectric composition prepared by adding a sintering additive having excellent qualities to a conventional (Ca1-xSrx)m(Zr1-yTiy)O3 based dielectric composition, so that it can be sintered under a reducing atmosphere to be used in formation of a nickel electrode, can be sintered at a temperature of less than 1,300° C., and even more, at a low temperature of 1,250° C., and has a small dielectric loss and a high resistivity. The composition of the present invention includes a nonreducible dielectric composition comprising a main component expressed by the general formula, (Ca1-xSrx)m(Zr1-yTiy)O3, which has the ranges of 0≦x≦1, 0≦y<0.09, and 0.7≦m≦1.05; and 0.
    Type: Application
    Filed: December 26, 2002
    Publication date: July 3, 2003
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Young Tae Moon, Jong Hee Kim, Dong Sook Shin, Young Min Kim
  • Publication number: 20030125191
    Abstract: Disclosed is a nonreducible dielectric composition. Provided is a highly reliable TC based dielectric composition prepared by adding a sintering additive having excellent qualities to a conventional (Ca1-xSrx)m(Zr1-yTiy)O3 based dielectric composition, so that it can be sintered under a reducing atmosphere to be used in formation of a nickel electrode, can be sintered at a low temperature of less than 1,250° C., and has a small dielectric loss and a high resistivity. The composition of the present invention includes a nonreducible dielectric composition comprising a main component expressed by the general formula, (Ca1-xSrx)m(Zr1-yTiy)O3, which has the ranges of 0≦x≦1, 0.09≦y≦0.35, and 0.7≦m≦1.05; and 0.
    Type: Application
    Filed: December 24, 2002
    Publication date: July 3, 2003
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Young Min Kim, Jong Hee Kim, Dong Sook Shin, Young Tae Moon