Abstract: A method for processing a substrate includes providing the substrate, a film being formed on the substrate, performing pretreatment to surface-treat the film formed on the substrate using a treatment gas in a plasma state, and performing, after the pretreatment, liquid treatment to remove the film from the substrate by supplying a treatment liquid onto the substrate.

Abstract: An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.

Abstract: The inventive concept relates to a liquid dispensing nozzle and an apparatus for treating a substrate. The liquid dispensing nozzle includes a first fluid channel that is formed in the nozzle and through which a processing liquid flows and a second fluid channel in communication with the first fluid channel, the second fluid channel being connected to a dispensing end of the nozzle. The second fluid channel has a larger width than the first fluid channel, and a central axis of the first fluid channel and a central axis of the second fluid channel are connected with each other in a straight line.