Abstract: Disclosed is an image sensor including a semiconductor substrate including first and second pixel regions, first and second photoelectric conversion elements on the first and second pixel regions, a pixel isolation structure between the first and second photoelectric conversion elements, a first floating diffusion region on the first pixel region, a first transfer gate electrode between the first photoelectric conversion element and the first floating diffusion region, a second floating diffusion region on the second pixel region, a second transfer gate electrode between the second photoelectric conversion element and the second floating diffusion region, a first charge storage region on the first pixel region, a second charge storage region on the second pixel region, a first switching element between the first floating diffusion region and the first charge storage region, and a second switching element between the second floating diffusion region and the second charge storage region.