Abstract: A method of fabricating a semiconductor package includes disposing a preliminary semiconductor package on a stage, the preliminary semiconductor package including a substrate to which a pad part is attached, an interposer disposed on the substrate, and a semiconductor chip disposed between the substrate and the interposer. A bonding tool is disposed on the interposer. The bonding tool includes a first region and a second region outside of the first region. The second region of the bonding tool corresponds to the pad part. The interposer and the substrate are bonded to each other.

Abstract: Provided are improved manufacturing methods of semiconductor devices, probe cards, test apparatuses including the probe card, and methods for manufacturing probe cards. The probe card includes a circuit board, a support located under the circuit board, and a plurality of probe needles located on a bottom surface of the support. Each of the probe needles has a tip configured to contact a side surface of a bump included in a test target. The support may include a stress absorption layer located on a bottom surface to which the probe needles are connected. Manufacturing of semiconductor devices may comprise forming elongated conductive bumps on a body of a semiconductor device, testing the semiconductor device by contacting tips of the probe needles to sides surfaces of the bumps and packaging of the semiconductor device.

Abstract: Provided are improved manufacturing methods of semiconductor devices, probe cards, test apparatuses including the probe card, and methods for manufacturing probe cards. The probe card includes a circuit board, a support located under the circuit board, and a plurality of probe needles located on a bottom surface of the support. Each of the probe needles has a tip configured to contact a side surface of a bump included in a test target. The support may include a stress absorption layer located on a bottom surface to which the probe needles are connected. Manufacturing of semiconductor devices may comprise forming elongated conductive bumps on a body of a semiconductor device, testing the semiconductor device by contacting tips of the probe needles to sides surfaces of the bumps and packaging of the semiconductor device.

Abstract: According to the present disclosure, there is provided a piezocapacitive type pressure sensor including a first electrode layer, a second electrode layer spaced apart from the first electrode layer, and a dielectric layer formed between the first electrode layer and the second electrode layer, wherein the dielectric layer is made of a porous elastomer.