Abstract: The present invention is to solve the problems caused in various methods used to improve the performance of the device by improvement of conventional base layer. The present invention discloses a hot electron device which can improve the performance of the device such as the improvement in the current density and decrease in transition time by reducing the dispersion phenomenon by introducing indium arsenide layer having v-shape conduction band due to the graded composition as the base layer of hetero structure hot electron device (HET).In addition, the present invention discloses a resonant tunneling hot electron device which is constructed by adding an emitter electron projection layer to the hot electron device of the present invention so that the Fermi energy and alignment can occur due to the stark shift and the projection of hot electron to the base region can occur through the Fermi energy and alignment.

Abstract: The present invention relates to an ultra-high speed semiconductor phototransistor which comprises a substrate. A conductive collector layer, on which a collector electrode is formed, is formed on the substrate. A collector barrier layer for collector electric potential is formed on the conductive collector layer. A conductive base layer, on which a base electrode is formed, is formed on the collector electric potential barrier layer. An emitter barrier layer for emitter electric potential is formed on the conductive base layer for injecting hot-electrons onto the conductive base layer. The emitter barrier layer for emitter electric potential further comprises various sizes of quantum-dot array combination structures for absorbing an infrared ray. A blocking barrier layer positioned beneath the quantum-dot array combination structures reduces a dark current passed through the quantum-dot array combination structure.

Abstract: A resonant tunneling hot electron device uses an interband tunneling double barrier structure as an electron injection layer and is capable of increasing PVR and peak current using an enhanced resonant interband tunneling effect through alignment of a hole confined state and an electron confined state by a Stark shift effect. It includes a conductive collector layer formed on a substrate; a conductive base layer having a conduction band minimum lower than that of the emitter barrier layer and the collector barrier layer and having high electron mobility; a collector barrier layer formed between the base layer and the collector layer; and an electron injection electron barrier layer of an enhanced interband resonant tunneling quantum well broken band gap heterostructure formed between the emitter layer and the base layer. This structure exploits an enhanced resonant tunneling effect due to alignments of quantum confined states by Stark shifts.

Abstract: The present invention provides a resonant tunneling electronic device having a plurality of nearly decoupled quantum barrier layers and quantum-well layers alternatively formed between an emitter layer and a collector layer, and has a stacked structure in such a manner that in the order of their stack the heights of the quantum barriers are gradually increased, and the widths of the quantum-wells interposed between the quantum barrier layers are gradually decreased, so that electron resonant tunneling through the aligned quantum with confined states under the application of external bias can occur.