Patents by Inventor Dong-Won Chang

Dong-Won Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming semiconductor device
    Patent number: 7736989
    Abstract: A method of forming a semiconductor device, where the method may include forming a first trench in a semiconductor substrate, forming first device isolation patterns that fill the first trench, forming spacers on sidewalls of the first device isolation patterns, forming a second trench in the semiconductor substrate between first device isolation patterns, and forming second device isolation patterns that fill the second trench. The second trench is formed using an etching process adopting the first device isolation pattern and the spacer as a mask.
    Type: Grant
    Filed: July 21, 2008
    Date of Patent: June 15, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Won Chang, Sung-Nam Chang, Seung-Gun Seo, Dong-Seog Eun
  • METHODS OF FORMING SEMICONDUCTOR DEVICE
    Publication number: 20090029520
    Abstract: A method of forming a semiconductor device, where the method may include forming a first trench in a semiconductor substrate, forming first device isolation patterns that fill the first trench, forming spacers on sidewalls of the first device isolation patterns, forming a second trench in the semiconductor substrate between first device isolation patterns, and forming second device isolation patterns that fill the second trench. The second trench is formed using an etching process adopting the first device isolation pattern and the spacer as a mask.
    Type: Application
    Filed: July 21, 2008
    Publication date: January 29, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong-Won CHANG, Sung-Nam Chang, Seung-Gun Seo, Dong-Seog Eun