Abstract: A computing apparatus includes: at least one memory; and at least one processor, wherein the processor generates quantitative information regarding at least one cell included in a region of interest of a pathological slide image by analyzing the pathological slide image, generates qualitative information regarding at least one tissue included in the pathological slide image by analyzing the pathological slide image, and controls a display apparatus to output at least one of the quantitative information and the qualitative information on the pathological slide image according to a manipulation of a user.

Abstract: It is disclosed a blood glucose prediction system and method using saliva-based artificial intelligence deep learning technique.

Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; a free acid; and a solvent; (d) heating the coated semiconductor substrate; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: New methods are provided for manufacturing a semiconductor device. Preferred methods of the invention include depositing a photoresist on a semiconductor substrate surface followed by imaging and development of resist coating layer; applying a curable organic or inorganic composition over the resist relief image; etching to provide a relief image of the resist encased by the curable composition; and removing the resist material whereby the curable organic or inorganic composition remains in a relief image of increased pitch relative to the previously developed resist image.

Abstract: Provided are methods of forming an ion implanted region in a semiconductor device.

Abstract: Provided are methods of forming an ion implanted region in a semiconductor device.

Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; a free acid; and a solvent; (d) heating the coated semiconductor substrate; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: New methods are provided for manufacturing a semiconductor device. Preferred methods of the invention include depositing a photoresist on a semiconductor substrate surface followed by imaging and development of resist coating layer; applying a curable organic or inorganic composition over the resist relief image; etching to provide a relief image of the resist encased by the curable composition; and removing the resist material whereby the curable organic or inorganic composition remains in a relief image of increased pitch relative to the previously developed resist image.