Patents by Inventor Dong Woo BAE

Dong Woo BAE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12338542
    Abstract: An ingot growing apparatus is disclosed. An ingot growing apparatus according to an embodiment of the present invention comprises: a growth furnace in which a main crucible for receiving molten silicon in order to grow an ingot is disposed; a susceptor formed so as to surround the outer surface of the main crucible and including a plurality of heating members which are electrically insulated from each other; and a heater which generates a magnetic field and heats the plurality of heating members through electromagnetic induction by the magnetic field, wherein the plurality of heating members form loops along the outer surface of the main crucible.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: June 24, 2025
    Assignees: HANWHA SOLUTIONS CORPORATION, HANWHA CORPORATION
    Inventors: Dong Woo Bae, Kyung Seok Lee, Young Min Lee
  • Publication number: 20240076798
    Abstract: An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.
    Type: Application
    Filed: September 3, 2021
    Publication date: March 7, 2024
    Applicants: HANWHA SOLUTIONS CORPORATION, HANWHA CORPORATION
    Inventors: Young Min LEE, Kyung Seok LEE, Jin Sung PARK, Dong Woo BAE
  • Publication number: 20230407518
    Abstract: The present invention relates to an apparatus for continuously growing an ingot, and more particularly to an apparatus for continuously growing an ingot which is capable of melting a silicon material in a solid state by means of an induction heating method, and supplying the molten silicon material to a main crucible.
    Type: Application
    Filed: September 3, 2021
    Publication date: December 21, 2023
    Inventors: Dong Woo BAE, Kyung Seok LEE, Young Min LEE
  • Publication number: 20230332325
    Abstract: An ingot growing apparatus is disclosed. An ingot growing apparatus according to an embodiment of the present invention comprises: a growth furnace in which a main crucible for receiving molten silicon in order to grow an ingot is disposed; a susceptor formed so as to surround the outer surface of the main crucible and including a plurality of heating members which are electrically insulated from each other; and a heater which generates a magnetic field and heats the plurality of heating members through electromagnetic induction by the magnetic field, wherein the plurality of heating members form loops along the outer surface of the main crucible.
    Type: Application
    Filed: September 3, 2021
    Publication date: October 19, 2023
    Applicants: HANWHA SOLUTIONS CORPORATION, HANWHA CORPORATION
    Inventors: Dong Woo BAE, Kyung Seok LEE, Young Min LEE
  • Patent number: 10825896
    Abstract: Disclosed is a transistor including a substrate, first and second type wells in contact with each other on the substrate; and a breakdown voltage improving region including vertical high concentration doped regions according to first and second types vertically in contact from upper surfaces of the first and second type wells to an upper surface of the substrate in a portion where the first and second type wells are in contact with each other.
    Type: Grant
    Filed: October 12, 2017
    Date of Patent: November 3, 2020
    Assignee: SOGANG UNIVERSITY RESEARCH FOUNDATION
    Inventors: Kwang Soo Kim, Dong Woo Bae
  • Publication number: 20190198608
    Abstract: Disclosed is a transistor including a substrate, first and second type wells in contact with each other on the substrate; and a breakdown voltage improving region including vertical high concentration doped regions according to first and second types vertically in contact from upper surfaces of the first and second type wells to an upper surface of the substrate in a portion where the first and second type wells are in contact with each other.
    Type: Application
    Filed: October 12, 2017
    Publication date: June 27, 2019
    Applicant: SOGANG UNIVERSITY RESEARCH FOUNDATION
    Inventors: Kwang Soo KIM, Dong Woo BAE