Patents by Inventor Dong Woo BAE

Dong Woo BAE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11982291
    Abstract: A blower unit for a vehicle and an air conditioning device including the same, the blower unit including: a scroll casing having an inlet port; a fan rotatably disposed in the scroll casing; a motor having a shaft coupled to the fan; and a bell mouth disposed in the inlet port, in which an inner end of the scroll casing, which defines the inlet port, is disposed to be spaced apart from the fan in a radial direction to define a separation space, and the bell mouth prevents air, which flows by a rotation of the fan, from flowing reversely through the separation space. The blower unit and the air conditioning device including the same prevent air from flowing reversely to the outside of the scroll casing by means of the arrangement of the bell mouth and the scroll casing and the structural shape of the bell mouth.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: May 14, 2024
    Assignee: Hanon Systems
    Inventors: Dae Keun Park, Dong Gyun Kim, Si Hyung Kim, Eun Suk Bae, Jun Ho Seo, Nam Jun Lee, Ho Lee, Seung Woo Jo
  • Patent number: 11966768
    Abstract: Disclosed herein are an apparatus and method for a multi-cloud service platform. The apparatus includes one or more processors and executable memory for storing at least one program executed by the one or more processors. The at least one program may receive a service request from a user client device, generate a multi-cloud infrastructure service using multiple clouds in response to the service request, make the multiple clouds interoperate with mufti-cloud infrastructure in order to provide the multi-cloud infrastructure service, and generate a multi-cloud application runtime environment corresponding to the multi-cloud infrastructure service.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: April 23, 2024
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Seok-Ho Son, Dong-Jae Kang, Byoung-Seob Kim, Seung-Jo Bae, Ji-Hoon Seo, Byeong-Thaek Oh, Kure-Chel Lee, Young-Woo Jung
  • Publication number: 20240076798
    Abstract: An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.
    Type: Application
    Filed: September 3, 2021
    Publication date: March 7, 2024
    Applicants: HANWHA SOLUTIONS CORPORATION, HANWHA CORPORATION
    Inventors: Young Min LEE, Kyung Seok LEE, Jin Sung PARK, Dong Woo BAE
  • Patent number: 11912102
    Abstract: An air conditioner for a vehicle including an air-conditioning case divided into a plurality of air passageways by a separation wall. A heating heat exchanger is disposed inside the air-conditioning case and exchanges heat with air to heat the interior of the vehicle. A perforated member is disposed at a downstream side of the heating heat exchanger and has a plurality of perforated holes through which the air passing the heating heat exchanger passes, and a partition wall is disposed between the heating heat exchanger and the perforated member to divide the air passageway of the air-conditioning case into a plurality of air passageways, wherein the partition wall is formed integrally with the perforated member.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: February 27, 2024
    Assignee: HANON SYSTEMS
    Inventors: Dong Won Lee, Jong Su Kim, Jae Woo Ko, Young Keun Kim, Chang Soo Bae, Jong Min Lee, Gyu Ik Han
  • Publication number: 20230407518
    Abstract: The present invention relates to an apparatus for continuously growing an ingot, and more particularly to an apparatus for continuously growing an ingot which is capable of melting a silicon material in a solid state by means of an induction heating method, and supplying the molten silicon material to a main crucible.
    Type: Application
    Filed: September 3, 2021
    Publication date: December 21, 2023
    Inventors: Dong Woo BAE, Kyung Seok LEE, Young Min LEE
  • Publication number: 20230332325
    Abstract: An ingot growing apparatus is disclosed. An ingot growing apparatus according to an embodiment of the present invention comprises: a growth furnace in which a main crucible for receiving molten silicon in order to grow an ingot is disposed; a susceptor formed so as to surround the outer surface of the main crucible and including a plurality of heating members which are electrically insulated from each other; and a heater which generates a magnetic field and heats the plurality of heating members through electromagnetic induction by the magnetic field, wherein the plurality of heating members form loops along the outer surface of the main crucible.
    Type: Application
    Filed: September 3, 2021
    Publication date: October 19, 2023
    Applicants: HANWHA SOLUTIONS CORPORATION, HANWHA CORPORATION
    Inventors: Dong Woo BAE, Kyung Seok LEE, Young Min LEE
  • Patent number: 10825896
    Abstract: Disclosed is a transistor including a substrate, first and second type wells in contact with each other on the substrate; and a breakdown voltage improving region including vertical high concentration doped regions according to first and second types vertically in contact from upper surfaces of the first and second type wells to an upper surface of the substrate in a portion where the first and second type wells are in contact with each other.
    Type: Grant
    Filed: October 12, 2017
    Date of Patent: November 3, 2020
    Assignee: SOGANG UNIVERSITY RESEARCH FOUNDATION
    Inventors: Kwang Soo Kim, Dong Woo Bae
  • Publication number: 20190198608
    Abstract: Disclosed is a transistor including a substrate, first and second type wells in contact with each other on the substrate; and a breakdown voltage improving region including vertical high concentration doped regions according to first and second types vertically in contact from upper surfaces of the first and second type wells to an upper surface of the substrate in a portion where the first and second type wells are in contact with each other.
    Type: Application
    Filed: October 12, 2017
    Publication date: June 27, 2019
    Applicant: SOGANG UNIVERSITY RESEARCH FOUNDATION
    Inventors: Kwang Soo KIM, Dong Woo BAE