Abstract: Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.

Abstract: Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.

Abstract: The present disclosure relates to a cell-derived vesicle rich in intracellular protein homeostasis regulators, and to a method of preparing same. The cell-derived vesicle of the present disclosure is characterized by containing an abundance of a specific protein compared to that in a naturally secreted exosome or the originated cell, and by virtue of said characteristic, can be utilized for various purposes such as in a pharmaceutical composition, a diagnostic composition, and a composition for drug delivery. Using the cell-derived vesicle rich in intracellular protein homeostasis regulators and the method of preparing same of the present disclosure, it is possible to easily deliver the intracellular protein homeostasis regulators to a target, such as a cell, thereby easily maintaining protein homeostasis in cells.

Abstract: A computer-implemented method is disclosed. The method includes: receiving, via a user device, input of parameters associated with a schedule item and a resource allocation; obtaining account data of a resource account associated with the user device; generating a first schedule of recommended activities for the schedule item based on the inputted parameters and the account data of the resource account, the first schedule identifying one or more activities and an order associated with the one or more activities; obtaining real-time context data associated with the user device; detecting a deviation from the first schedule based on the real-time context data; and in response to detecting the deviation, providing, via the user device, a first notification including indications of the detected deviation and a recommendation of a second schedule of activities.

Abstract: Provided is a method for preparing cell-derived vesicles, and more particularly, a method for preparing cell-derived vesicles using a cell extruder, and a syringe-type cell extruder for effectively preparing cell-derived vesicles. According to the present invention, by using the method for preparing the cell-derived vesicles and the cell extruder, it is possible to prepare cell-derived vesicles in a stable, economical, and mass-producible manner.

Abstract: A semiconductor device comprising a first active pattern including a first lower pattern, and a plurality of first sheet patterns, a plurality of first gate structures on the first lower pattern, a second active pattern including a second lower pattern and a plurality of second sheet patterns, a plurality of second gate structures on the second lower pattern, a first source/drain recess between adjacent first gate structures, a second source/drain recess between adjacent second gate structures, first and second source/drain patterns in the first and second source/drain recesses, respectively, wherein a depth from an upper surface of the first lower pattern to a lowermost part of the first source/drain pattern is smaller than a depth from an upper surface of the second lower pattern to a lowermost part of the second source/drain pattern, and the first and second source/drain patterns include impurities of same conductive type.

Abstract: Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.

Abstract: A wireless communication system includes a wearable device transmitting advertising packet data, a vehicle, and a smart apparatus. The vehicle receives the advertising packet data, connects with the wearable device if a user is present in the vehicle, and transmits set packet data to the smart apparatus. The smart apparatus receives the advertising packet data, connects with the wearable device if the user is not present in the vehicle, and receives the set packet data to disconnect the wearable device.

Abstract: A wireless power transmission device including a resonant circuit magnetically coupled to a wireless power reception device and being configured to wirelessly transmit power, an alternating current (AC) generator including switches and being configured to receive a direct current (DC) voltage and to generate an AC current, according to a switching operation of the switches, to be supplied to the resonant circuit, and a variable capacitor connected to an output terminal of the AC generator and having a first capacitance, when a load state of the wireless power reception device is provided as a full load state and a second capacitance lower than the first capacitance, when the load state is provided as a light load state.

Abstract: A wireless power transmitter includes: a converter including switching elements forming a bridge circuit and configured to output an alternating current (AC) voltage in response to control signals; a resonator including a resonant capacitor and a resonant coil, and configured to receive the AC voltage to transmit power wirelessly; and a controller configured to set a dead time at which a magnitude of the AC voltage is substantially zero in response to a signal received from a wireless power receiver.

Abstract: A coil substrate for wireless power transmission includes: an insulating substrate including a first surface and a second surface; a first wiring portion disposed on the first surface, wherein the first wiring portion includes first spiral patterns and a section in which opposing ends of each of the first spiral patterns are disposed parallel to each other; a second wiring portion disposed on the second surface and including second spiral patterns, wherein opposing ends of each of the second spiral patterns are spaced apart from each other; and conductive vias alternately connecting the first spiral patterns and the second spiral patterns to each other to form coil turns.

Abstract: A wireless communication system includes a wearable device transmitting advertising packet data, a vehicle, and a smart apparatus. The vehicle receives the advertising packet data, connects with the wearable device if a user is present in the vehicle, and transmits set packet data to the smart apparatus. The smart apparatus receives the advertising packet data, connects with the wearable device if the user is not present in the vehicle, and receives the set packet data to disconnect the wearable device.

Abstract: A wireless power transmission device including a resonant circuit magnetically coupled to a wireless power reception device and being configured to wirelessly transmit power, an alternating current (AC) generator including switches and being configured to receive a direct current (DC) voltage and to generate an AC current, according to a switching operation of the switches, to be supplied to the resonant circuit, and a variable capacitor connected to an output terminal of the AC generator and having a first capacitance, when a load state of the wireless power reception device is provided as a full load state and a second capacitance lower than the first capacitance, when the load state is provided as a light load state.

Abstract: A wireless power transmission device includes a power amplifier, a detection device, and a control unit. The power amplifier is configured to receive a direct current (DC) voltage and supply an alternating current (AC) power current to a transmission resonator by performing a switching operation. The detection device is configured to detect a voltage of an output terminal of the power amplifier based on the switching operation. The control unit is configured to detect an external object based on a change in the voltage, and control an output of the power amplifier in response to the change.

Abstract: A wireless power transmitter includes: a converter including switching elements forming a bridge circuit and configured to output an alternating current (AC) voltage in response to control signals; a resonator including a resonant capacitor and a resonant coil, and configured to receive the AC voltage to transmit power wirelessly; and a controller configured to set a dead time at which a magnitude of the AC voltage is substantially zero in response to a signal received from a wireless power receiver.

Abstract: A coil substrate for wireless power transmission includes: an insulating substrate including a first surface and a second surface; a first wiring portion disposed on the first surface, wherein the first wiring portion includes first spiral patterns and a section in which opposing ends of each of the first spiral patterns are disposed parallel to each other; a second wiring portion disposed on the second surface and including second spiral patterns, wherein opposing ends of each of the second spiral patterns are spaced apart from each other; and conductive vias alternately connecting the first spiral patterns and the second spiral patterns to each other to form coil turns.

Abstract: Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.

Abstract: Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.

Abstract: Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.

Abstract: Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.